STE38NB50 ® N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 38 A ID Drain Current (continuous) at T c = 100 o C 24 A 152 A I DM (•) P tot dv/dt (1) T stg Tj Drain Current (pulsed) o Total Dissipation at T c = 25 C 400 W Derating Factor 3.2 W/ o C Peak Diode Recovery voltage slope 4.5 V/ns Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area June 1998 -65 to 150 o C 150 o C (1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STE38NB50 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 0.31 30 0.1 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) Max Value Unit 38 A 1200 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VGS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 500 Unit V T c = 125 o C V GS = ± 30 V 10 100 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID = 250 µA V GS = 10 V Min. 3 I D = 19 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 4 5 V 0.11 0.13 Ω 38 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/8 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 19 A V GS = 0 Min. Typ. 18 20 7000 950 80 Max. Unit S 9100 1235 104 pF pF pF STE38NB50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 250 V I D = 19 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V ID = 38 A V GS = 10 V Min. Typ. Max. Unit 46 32 64 45 ns ns 159 35 67 223 nC nC nC Typ. Max. Unit 56 53 120 78 74 168 ns ns ns Typ. Max. Unit 38 152 A A 1.6 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 400 V I D = 38 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 38 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 950 ns 12 µC 25 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE38NB50 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STE38NB50 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STE38NB50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE38NB50 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O F E H D N J K C L M 7/8 STE38NB50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 8/8