STD5NE10L N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES 3 3 2 1 1 IPAK TO-251 (Suffix ”-1”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS Parameter Value Unit Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 5 A ID Drain Current (continuous) at Tc = 100 o C 3.5 A Drain Current (pulsed) 20 A I DM (•) P tot dv/dt( 1 ) T st g Tj o Total Dissipation at Tc = 25 C 25 W Derating F actor 0.2 W /o C 6 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature (•) Pulse width limited by safe operating area October 1998 -65 to 150 o C 150 o C ( 1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STD5NE10L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 5 100 1.5 275 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter Max Valu e Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 5 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 30 V) 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) T yp. Max. 100 V GS = 0 I DSS Min. Unit V T c = 100 oC V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10 V ID = 2.5 A Resistance V GS = 5 V ID = 2.5 A I D(o n) V DS = V GS Min. T yp. Max. Unit 1 1.7 2.5 V 0.3 0.35 0.4 0.45 Ω Ω 5 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/5 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D =2.5 A V GS = 0 Min. T yp. Max. 2 Unit S 345 45 20 450 60 25 pF pF pF STD5NE10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on Time Rise Time V DD = 50 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V Min. I D = 2.5 A V GS = 5 V ID = 5 A V GS = 5 V T yp. Max. Unit 7 17 9 22 ns ns 10 5 4 14 nC nC nC T yp. Max. Unit 8 9 19 10 12 25 ns ns ns T yp. Max. Unit 5 20 A A SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions V DD = 80 V R G = 4.7 Ω Min. ID = 5 A V GS = 10 V SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A V DD = 30 V V GS = 0 1.5 di/dt = 100 A/µs T j = 150 oC V 75 ns 190 µC 5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STD5NE10L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 4/5 STD5NE10L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 5/5 STD5NE10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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