STMICROELECTRONICS STS10PF30L

STS10PF30L
P-CHANNEL 30V - 0.012 Ω - 10A SO-8
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
STS10PF30L
■
■
■
Figure 1:Package
VDSS
RDS(on)
ID
30V
<0.014 Ω
10 A
TYPICAL RDS(on) = 0.012 Ω
STANDARDOUTLINEFOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance.
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ LOAD SWITCH
SO-8
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STS10PF30L
MARKING
S10PF30L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Table 3: ABSOLUTE MAXIMUM RATING
Symbol
VDS
VDGR
VGS
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Value
Unit
30
V
30
V
± 16
V
10
A
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
6
A
Drain Current (pulsed)
40
A
2.5
W
IDM(•)
Ptot
Total Dissipation at TC = 25°C
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
May 2005
Rev. 2.0
1/9
STS10PF30L
Table 4: THERMAL DATA
Rthj-amb
Rthj-lead
Tl
Tstg
(*) Thermal
Resistance Junction-ambient
Thermal Resistance Junction-leads
Maximum Lead Temperature For Soldering Purpose
storage temperature
°C/W
°C/W
°C
°C
47
16
150
-55 to 150
Max
Max
Typ
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t >10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Table 5: OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
Table 6: ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
ID = 5 A
ID = 5 A
Min.
Typ.
1
V
0.012
0.015
0.014
0.018
Ω
Ω
Typ.
Max.
Unit
Table 7: DYNAMIC
Symbol
gfs
Ciss
Coss
Crss
2/9
Parameter
Test Conditions
Forward Transconductance
VDS = 10 V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 5 A
Min.
31
S
2300
750
115
pF
pF
pF
STS10PF30L
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 5 A
VGS = 4.5 V
RG = 4.7 Ω
(Resistive Load, Figure 15)
72
87
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15V ID= 10A VGS=4.5V
29
6.8
7.6
39
nC
nC
nC
Typ.
Max.
Unit
(see test circuit, Figure 16)
ns
ns
Table 9: SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 15 V
ID = 5 A
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 15)
89
27
ns
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
trr
Qrr
IRRM
Test Conditions
Forward On Voltage
ISD = 10 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A
di/dt = 100A/µs
Tj = 150°C
VDD = 15 V
(see test circuit, Figure 17)
Min.
Typ.
VGS = 0
48.5
68
2.8
Max.
Unit
10
40
A
A
1.2
V
ns
nC
A
(*) Pulse width > 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by TJMAX
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
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STS10PF30L
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
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STS10PF30L
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
5/9
STS10PF30L
Fig. 15: Switching Times Test Circuits For Resistive Load
Fig. 17: Test Circuit For Diode Recovery Behaviour
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Fig. 16: Gate Charge test Circuit
STS10PF30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS10PF30L
Table 11:Revision History
8/9
Date
Revision
May 2005
2.0
Description of Changes
completed whit curves
STS10PF30L
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