STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET™ II POWER MOSFET Table 1: General Features TYPE STS10PF30L ■ ■ ■ Figure 1:Package VDSS RDS(on) ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance. APPLICATIONS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ LOAD SWITCH SO-8 Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STS10PF30L MARKING S10PF30L PACKAGE SO-8 PACKAGING TAPE & REEL Table 3: ABSOLUTE MAXIMUM RATING Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Value Unit 30 V 30 V ± 16 V 10 A ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C 6 A Drain Current (pulsed) 40 A 2.5 W IDM(•) Ptot Total Dissipation at TC = 25°C Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2005 Rev. 2.0 1/9 STS10PF30L Table 4: THERMAL DATA Rthj-amb Rthj-lead Tl Tstg (*) Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Lead Temperature For Soldering Purpose storage temperature °C/W °C/W °C °C 47 16 150 -55 to 150 Max Max Typ (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t >10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) Table 5: OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit Table 6: ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 5 A ID = 5 A Min. Typ. 1 V 0.012 0.015 0.014 0.018 Ω Ω Typ. Max. Unit Table 7: DYNAMIC Symbol gfs Ciss Coss Crss 2/9 Parameter Test Conditions Forward Transconductance VDS = 10 V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 5 A Min. 31 S 2300 750 115 pF pF pF STS10PF30L ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 15) 72 87 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V ID= 10A VGS=4.5V 29 6.8 7.6 39 nC nC nC Typ. Max. Unit (see test circuit, Figure 16) ns ns Table 9: SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 15) 89 27 ns ns Table 10: SOURCE DRAIN DIODE Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (*) trr Qrr IRRM Test Conditions Forward On Voltage ISD = 10 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A di/dt = 100A/µs Tj = 150°C VDD = 15 V (see test circuit, Figure 17) Min. Typ. VGS = 0 48.5 68 2.8 Max. Unit 10 40 A A 1.2 V ns nC A (*) Pulse width > 300 µs, duty cycle 1.5 %. (•) Pulse width limited by TJMAX Figure 3: Safe Operating Area Figure 4: Thermal Impedance 3/9 STS10PF30L Figure 5: Output Characteristics Figure 6: Transfer Characteristics Figure 7: Transconductance Figure 8: Static Drain-source On Resistance Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Capacitance Variations 4/9 STS10PF30L Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 12: Normalized on Resistance vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature. . . 5/9 STS10PF30L Fig. 15: Switching Times Test Circuits For Resistive Load Fig. 17: Test Circuit For Diode Recovery Behaviour 6/9 Fig. 16: Gate Charge test Circuit STS10PF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/9 STS10PF30L Table 11:Revision History 8/9 Date Revision May 2005 2.0 Description of Changes completed whit curves STS10PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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