STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STS12NH3LL ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 30 V < 0.0105 Ω 12 A TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE LOW INPUT CAPACITANCE SO-8 DESCRIPTION The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications. Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH FREQUENCY DC-DC CONVERTERS FOR COMPUTER AND TELECOM Table 2: Order Codes Part Number Marking Package Packaging STS12NH3LL S12NH3LL SO-8 TAPE & REEL Rev. 3 July 2004 This is preliminary information on a new product now in development. Details are subject to change without notice 1/7 STS12NH3LL Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS= 0) Drain-gate Voltage (RGS= 20 kΩ) Gate-source Voltage Value Unit 30 V 30 V ± 16 V ID Drain Current (continuous) at TC= 25°C 12 A ID Drain Current (continuous) at TC= 100°C 7.5 A IDM () Drain Current (pulsed) 48 A Ptot Total Dissipation at TC= 25°C 2.5 W Tstg Storage Temperature – 55 to 150 °C 50 °C/W Tj Max. Operating Junction Temperature ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-amb (#) Thermal Resistance Junction-ambient (# ) When Mounted on 1 inch² FR-4 board, 2 oz Cu (t ≤ 10 sec.) ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 6 A Min. Typ. Max. 30 Unit V 1 10 µA µA ± 100 nA 1 V 0.008 0.010 0.0105 0.013 Ω Ω Table 6: Dynamic 2/7 Symbol Parameter gfs (1) Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS= 15V, ID= 6 A TBD S Ciss Input Capacitance VDS= 25V, f= 1 MHz, VGS= 0 965 pF Coss Output Capacitance 285 pF Crss Reverse Transfer Capacitance 38 pF STS12NH3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD= 15 V, ID= 6 A RG = 4.7Ω, VGS = 4.5V (see Figure 3) VDD= 15V, ID= 12 A, VGS= 4.5 V (see Figure 5) Typ. Max. Unit 15 ns 32 ns 9 3.7 3 12 nC nC nC Typ. Max. Unit Table 8: Switching Off Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. 18 8.5 VDD= 15 V, ID= 6 A, RG= 4.7Ω, VGS= 4.5 V (see Figure 3) ns ns Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) Test Conditions VSD Forward On Voltage ISD = 12 A, VGS = 0 trr Qrr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 20V, Tj = 150°C (see Figure 4) IRRM Min. Typ. 24 17.4 1.45 Max. Unit 12 48 A A 1.3 V ns nC A 3/7 STS12NH3LL Figure 3: Switching Times Test Circuit For Resistive Load Figure 4: Test Circuit For Diode Recovery Times 4/7 Figure 5: Gate Charge Test Circuit STS12NH3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.6 0.157 0.050 0.023 8 (max.) 5/7 STS12NH3LL Table 10: Revision History Date Revision 21-July-2004 3 Description of Changes The Rds(on) value changed (see table5). New stylesheet 6/7 STS12NH3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7