STMICROELECTRONICS STS12NH3LL

STS12NH3LL
N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8
ULTRA LOW GATE CHARGE STripFET™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE
STS12NH3LL
■
■
■
■
■
Figure 1: Package
VDSS
RDS(on)
ID
30 V
< 0.0105 Ω
12 A
TYPICAL RDS(on) = 0.008 Ω @ 10V
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
LOW INPUT CAPACITANCE
SO-8
DESCRIPTION
The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology.
An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore ideal
for high-density converters in Telecom and Computer applications.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH FREQUENCY DC-DC CONVERTERS
FOR COMPUTER AND TELECOM
Table 2: Order Codes
Part Number
Marking
Package
Packaging
STS12NH3LL
S12NH3LL
SO-8
TAPE & REEL
Rev. 3
July 2004
This is preliminary information on a new product now in development. Details are subject to change without notice
1/7
STS12NH3LL
Table 3: Absolute Maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Drain-source Voltage (VGS= 0)
Drain-gate Voltage (RGS= 20 kΩ)
Gate-source Voltage
Value
Unit
30
V
30
V
± 16
V
ID
Drain Current (continuous) at TC= 25°C
12
A
ID
Drain Current (continuous) at TC= 100°C
7.5
A
IDM ()
Drain Current (pulsed)
48
A
Ptot
Total Dissipation at TC= 25°C
2.5
W
Tstg
Storage Temperature
– 55 to 150
°C
50
°C/W
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-amb (#)
Thermal Resistance Junction-ambient
(# ) When Mounted on 1 inch² FR-4 board, 2 oz Cu (t ≤ 10 sec.)
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On /Off
Symbol
Parameter
Test Conditions
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 6 A
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
± 100
nA
1
V
0.008
0.010
0.0105
0.013
Ω
Ω
Table 6: Dynamic
2/7
Symbol
Parameter
gfs (1)
Test Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
VDS= 15V, ID= 6 A
TBD
S
Ciss
Input Capacitance
VDS= 25V, f= 1 MHz, VGS= 0
965
pF
Coss
Output Capacitance
285
pF
Crss
Reverse Transfer
Capacitance
38
pF
STS12NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Switching On
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD= 15 V, ID= 6 A
RG = 4.7Ω, VGS = 4.5V
(see Figure 3)
VDD= 15V, ID= 12 A, VGS= 4.5 V
(see Figure 5)
Typ.
Max.
Unit
15
ns
32
ns
9
3.7
3
12
nC
nC
nC
Typ.
Max.
Unit
Table 8: Switching Off
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
18
8.5
VDD= 15 V, ID= 6 A,
RG= 4.7Ω, VGS= 4.5 V
(see Figure 3)
ns
ns
Table 9: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
Test Conditions
VSD
Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100 A/µs
VDD = 20V, Tj = 150°C
(see Figure 4)
IRRM
Min.
Typ.
24
17.4
1.45
Max.
Unit
12
48
A
A
1.3
V
ns
nC
A
3/7
STS12NH3LL
Figure 3: Switching Times Test Circuit For Resistive Load
Figure 4: Test Circuit For Diode Recovery
Times
4/7
Figure 5: Gate Charge Test Circuit
STS12NH3LL
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
S
0.6
0.157
0.050
0.023
8 (max.)
5/7
STS12NH3LL
Table 10: Revision History
Date
Revision
21-July-2004
3
Description of Changes
The Rds(on) value changed (see table5).
New stylesheet
6/7
STS12NH3LL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
7/7