STL80NF3LL N-CHANNEL 30V - 0.0045Ω - 80A PowerFLAT™ ( 6X5 ) STripFET™ II MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL80NF3LL ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0055 Ω 20 A (2) TYPICAL RDS(on) = 0.0045 Ω @ 10V IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED PowerFLAT™( 6x5 ) DESCRIPTION The STL80NF3LL utilizes the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC converters for Telecom and Computer industries. The Chipscaled PowerFLAT™ package allows a significant board space saving, still boosting the performance. Figure 2: Internal Schematic Diagram APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ■ TOP VIEW Table 2: Order Codes Part Number Marking Package Packaging STL80NF3LL L80NF3LL PowerFLAT™ (6x5) TAPE & REEL Rev. 3 June 2005 This is a preliminary information on a new product now in development. Details are subjet to change without notice 1/9 STL80NF3LL Table 3: Absolute Maximum ratings Symbol Parameter Value Unit 30 V ± 16 V Drain Current (continuous) at TC= 25°C 80 A Drain Current (continuous) at TC= 100°C 50 A VDS Drain-source Voltage (VGS= 0) VGS Gate- source Voltage ID (1) ID (1) IDM (3) Drain Current (pulsed) 320 A Drain Current (continuous) at TC= 25°C 20 A PTOT (2) Total Dissipation at TC= 25°C 4 W PTOT (1) Total Dissipation at TC= 25°C 80 W 0.03 W/°C – 55 to 150 °C Thermal Resistance Junction-Case (Drain) 1.56 °C/W Thermal Operating Junction-pcb 31.3 °C/W ID (2) Derating Factor(2) Tstg Tj Storage Temperature Max. Operating Junction Temperature Table 4: Thermal Data Rthj-C Rthj-pcb (2) ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250µA RDS(on) Static Drain-source On Resistance Min. Typ. Max. 30 Unit V 1 10 ± 10 1 µA µA nA V VGS= 10 V, ID= 10 A 0.0045 0.0055 Ω VGS= 4.5 V, ID= 10 A 0.0055 0.007 Ω Table 6: Dynamic 2/9 Symbol Parameter gfs (4) Forward Transconductance Test Conditions VDS= 10V, ID= 10 A VDS= 25V, f= 1 MHz, VGS= 0 Min. Typ. Max. Unit 37 S 2160 pF Ciss Input Capacitance Coss Output Capacitance 614 pF Crss Reverse Transfer Capacitance 98 pF RG Gate Input Resistance 4.1 Ω f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain STL80NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On Symbol Parameter Test Conditions td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD= 15 V, ID= 10 A RG = 4.7Ω, VGS = 4.5V (see Figure 15) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V, ID= 10 A, VGS= 4.5 V (see Figure 17) Min. Typ. Max. 23.5 39 47.5 37 Unit ns ns ns ns 26 7 12 35 nC nC nC Typ. Max. Unit Table 8: Source Drain Diode Symbol ISD Parameter Test Conditions Min. Source-drain Current 20 A ISDM (3) Source-drain Current (pulsed) 80 A VSD (4) Forward On Voltage ISD= 20 A, VGS= 0 1.3 V Reverse Recovery Time Reverse RecoveryCharge Reverse Recovery Current ISD= 20 A, di/dt= 100 A/µs, VDD= 15 V, Tj = 150°C (see Figure 16) trr Qrr IRRM 39 45 2.3 ns nC A (1) The value is rated according Rthj-C . (2) When mounted on FR-4 board of 1in², 2oz Cu., t<10sec (3) Pulse width limited by safe operating area. (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 3/9 STL80NF3LL Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STL80NF3LL Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized BVDSS vs Temperature Figure 11: Normalized On Resistance vs Temperature Figure 14: Source-Drain Diode Forward Characteristics 5/9 STL80NF3LL Figure 15: Switching Times Test Circuit For Resistive Load Figure 16: Test Circuit For Diode Recovery Times 6/9 Figure 17: Gate Charge Test Circuit STL80NF3LL PowerFLAT™ (6x5) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. 0.80 0.83 0.93 0.031 0.032 0.036 A1 0.02 0.05 0.0007 0.0019 A3 0.20 A b 0.35 0.40 0.007 0.47 0.013 0.015 D 5.00 0.196 D1 4.75 0.187 D2 4.15 4.20 4.25 0.163 0.165 E 6.00 0.236 E1 5.75 0.226 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L 0.135 1.27 0.70 0.80 0.018 0.167 0.137 0.139 0.103 0.105 0.050 0.90 0.027 0.031 0.035 7/9 STL80NF3LL Table 9: Revision History 8/9 Date Revision 18-Apr-2005 20-Jun-2005 1 2 22-Jun-2005 3 Description of Changes First Release. Updated mechanical data New RG value on table 6 STL80NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9