STS6PF30L P-CHANNEL 30V - 0.027 Ω - 6A SO-8 STripFET™ POWER MOSFET ■ ■ ■ TYPE VDSS RDS(on) ID STS6PF30L 30 V <0.030 Ω 6A TYPICAL RDS(on) = 0.027 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ MOBILE PHONE APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage INTERNAL SCHEMATIC DIAGRAM Information furnished is believed to be accurate and reliable. However, STMicroel of use of such information nor for any infringement of patents or other rights of third by implication or otherwise Value under any patent or patent rights Unitof STMicroelectronic to change without notice. This publication supersedes and replaces all information 30 components in life support devices V authorized for use as critical or systems withou 30 ± 16 ID Drain Current (continuous) at TC = 25°C 6 ID Drain Current (continuous) at TC = 100°C 3.8 Drain Current (pulsed) 24 IDM(•) Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. May 2003 . SO-8 V The ST logo is registered trademark of ST V 2003 STMicroelectronics - All Righ A All other names are A the property of their re A STMicroelectronics GROUP OF CO 2.5 - China - Finland - France - Germany W Australia - Brazil - Hong Kong - In Singapore -actual Spain -polarity Sweden -ofSwitzerland - Un Note: For the P-CHANNEL MOSFET voltages and current has to be reversed http://www.st.com 1/8 STS6PF30L THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose storage temperature Max Typ 50 150 -55 to 150 °C/W °C °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 3 A ID = 3 A Min. Typ. Max. Unit 1 1.6 2.5 V 0.027 0.034 0.030 0.042 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS=10 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID=3 A Min. 12 S 1670 345 120 pF pF pF STS6PF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 3 A VDD = 15 V RG = 4.7 Ω VGS = 5 V (Resistive Load, Figure 1) 62 140 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24V ID= 6A VGS=5V (see test circuit, Figure 2) 21 3.9 8.6 28 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 3 A VDD = 24 V RG = 4.7Ω, VGS = 5 V (Resistive Load, Figure 1) 57 19 ns ns SOURCE DRAIN DIODE(*) Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 6 A VDD = 15 V Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 37 46.3 2.5 Max. Unit 6 4 A A 1.2 V ns nC A (*)Pulse width [ 300 µs, duty cycle 1.5 %. (•)Pulse width limited by TJMAX Safe Operating Area Thermal Impedance 3/8 STS6PF30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS6PF30L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8 STS6PF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS6PF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS6PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8