STMICROELECTRONICS STN2NE10

STN2NE10
®
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STN2NE10
100 V
< 0.4 Ω
2A
■
■
■
■
■
TYPICAL RDS(on) = 0.33 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size " stip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
2
1
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
VGS
Parameter
Drain-source Voltage (V GS = 0)
Value
Unit
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at T c = 25 o C
2
A
ID
Drain Current (continuous) at T c = 100 o C
1.3
A
I DM (•)
P tot
Drain Current (pulsed)
Total Dissipation at T c = 25 o C
Derating Factor
dv/dt(1 )
T st g
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
January 1999
8
A
2.5
W
0.02
W/ o C
6
V/ns
-65 to 150
o
C
150
o
C
(1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STN2NE10
THERMAL DATA
R thj-pcb
R thj-amb
Tl
o
50
60
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
o
C/W
C/W
o
260
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
Max Value
Unit
2
A
20
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
100
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.33
0.4
Ω
I D = 1A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
2
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 1 A
V GS = 0 V
Min.
Typ.
Max.
Unit
1
1.8
S
305
45
21
pF
pF
pF
STN2NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay Time
Rise Time
V DD = 50 V
I D = 35 A
VGS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
7
17
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
14
6
4
19
nC
nC
nC
Typ.
Max.
Unit
ID = 7 A
V GS = 10 V
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
t d(of f)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
I D = 3.5 A
V GS = 10 V
R G =4.7 Ω
(Resistive Load, see fig. 3)
25
7
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V clamp = 16 V
I D = 80 A
V GS = 10 V
R G = 4.7 Ω
(Inductive Load, see fig. 5)
7
8
16
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 7 A
di/dt = 100 A/µs
V DD = 30 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
2
8
A
A
1.5
V
75
ns
210
µC
5.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STN2NE10
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
4/5
STN2NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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