STMICROELECTRONICS STTH16L06C

STTH16L06C
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
Up to 2 x 10 A
A1
VRRM
600 V
A2
Tj
175°C
VF (typ)
1.05 V
trr (max)
35 ns
K
FEATURES AND BENEFITS
■
■
■
■
A1
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching & conduction losses
K
A2
K
A1
A2
TO-220AB
STTH16L06CT
TO-220FPAB
STTH16L06CFP
K
DESCRIPTION
The STTH16L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
Part Number
STTH16L06CT
STTH16L06CFP
Marking
STTH16L06CT
STTH16L06CFP
A2
A1
D2PAK
STTH16L06CG
Part Number
STTH16L06CG
STTH16L06GG-TR
Marking
STTH16L06CG
STTH16L06CG
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
IF(AV)
RMS forward voltage
Average forward
current
δ = 0.5
TO-220AB / D2PAK
TO-220FPAB
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
Tc = 140°C Per diode
Tc = 135°C Per device
Tc = 130°C Per diode
Tc = 120°C Per device
Tc = 110°C Per diode
Tc = 80°C
Per device
tp = 10ms sinusoidal
Value
Unit
600
V
30
A
8
16
10
20
8
16
90
A
A
-65 to + 175
°C
175
°C
.
September 2004
REV. 1
1/8
STTH16L06C
Table 4: Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to case
°C/W
Per diode
2.5
TO-220FPAB
Per diode
5
D2PAK
TO-220FPAB
Coupling
Unit
TO-220AB / D2PAK
TO-220AB /
Rth(c)
Value (max).
TO-220AB /
Total
1.6
Total
3.8
0.7
D2PAK
TO-220FPAB
°C/W
2.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics
Symbol
IR *
Parameter
Test conditions
Reverse leakage current Tj = 25°C
Min.
VR = VRRM
Tj = 150°C
VF **
Forward voltage drop
Tj = 25°C
25
IF = 8A
1.05
IF = 16A
Unit
8
µA
240
V
1.35
2.08
Tj = 150°C
Pulse test:
Max.
1.8
Tj = 150°C
Tj = 25°C
Typ
1.28
1.64
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 I F (RMS)
Table 6: Dynamic Characteristics (per diode)
Symbol
Parameter
trr
Reverse recovery
time
Tj = 25°C
IRM
Reverse recovery
current
Tj = 125°C IF = 8A
VR = 400V
dIF/dt = 100 A/µs
tfr
Forward recovery
time
Tj = 25°C
IF = 8A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25°C
IF = 8A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
2/8
Test conditions
Min. Typ Max. Unit
IF = 0.5A Irr = 0.25A IR =1A
IF = 1A dIF/dt = 50 A/µs VR =30V
35
ns
40
55
4.5
6.5
A
200
ns
3.5
V
STTH16L06C
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
IFM(A)
P(W)
100
15
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
90
Tj=150°C
(maximum values)
80
70
10
δ=1
60
Tj=150°C
(typical values)
50
Tj=25°C
(maximum values)
40
5
30
T
20
δ=tp/T
IF(AV)(A)
10
tp
0
VFM(V)
0
0
2
4
6
8
10
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AB & D2PAK)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
Single pulse
tp(s)
0.0
Single pulse
tp(s)
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5: Peak reverse recovery current versus
dIF/dt (typical values, per diode)
1.E-03
1.E-01
1.E+00
1.E+01
Figure 6: Reverse recovery time versus dIF/dt
(typical values, per diode)
trr(ns)
IRM(A)
18
400
VR=400V
Tj=125°C
16
1.E-02
IF=2 x IF(AV)
14
VR=400V
Tj=125°C
350
IF=IF(AV)
300
IF=2 x IF(AV)
12
IF=0.5 x IF(AV)
250
10
200
8
IF=IF(AV)
IF=0.5 x IF(AV)
150
6
100
4
50
2
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
3/8
STTH16L06C
Figure 7: Reverse recovery charges versus
dIF /dt (typical values, per diode)
Figure 8: Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
S factor
Qrr(nC)
1.6
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
VR=400V
Tj=125°C
IF< 2 x IF(AV)
VR=400V
Tj=125°C
1.4
IF=2 x IF(AV)
1.2
1.0
IF=IF(AV)
0.8
IF=0.5 x IF(AV)
0.6
0.4
0.2
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0
100
200
300
400
500
Figure 9: Relative variations of dynamic
parameters versus junction temperature
0
50
100
150
200
250
300
350
400
450
500
Figure 10: Transient peak forward voltage
versus dIF/dt (typical values, per diode)
VFP(V)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.4
S factor
1.2
1.0
0.8
trr
0.6
IF=IF(AV)
VR=400V
Reference: Tj=125°C
IRM
QRR
0.4
0.2
Tj(°C)
0.0
25
50
75
100
IF=IF(AV)
Tj=125°C
dIF/dt(A/µs)
0
125
Figure 11: Forward recovery time versus dIF/dt
(typical values, per diode)
50
100
150
200
250
300
350
400
450
500
Figure 12: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
tfr(ns)
180
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
160
140
120
100
10
80
60
40
20
dIF/dt(A/µs)
VR(V)
0
1
0
4/8
100
200
300
400
500
1
10
100
1000
STTH16L06C
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU=35µm) (D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
SCU(cm²)
0
0
5
10
15
20
25
30
35
40
Figure 14: TO-220AB Package Mechanical Data
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
5/8
STTH16L06C
Figure 15: D2PAK Package Mechanical Data
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
Figure 16: D2PAK Foot Print Dimensions
(in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
6/8
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
STTH16L06C
Figure 17: TO-220FPAB Package Mechanical Data
REF.
A
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
E
G1
G
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.018
0.027
0.75
1
0.03
0.039
1.15
1.7
0.045
0.067
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.205
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
16
Typ.
0.63
Typ.
28.6
30.6
1.126
1.205
9.8
10.6
0.386
0.417
2.9
3.6
0.114
0.142
15.9
16.4
0.626
0.646
9
9.3
0.354
0.366
3
3.2
0.118
0.126
Table 7: Ordering Information
■
■
■
■
Ordering type
STTH16L06CT
STTH16L06CG
Marking
STTH16L06CT
STTH16L06CG
Package
TO-220AB
D2PAK
Weight
2.23 g
1.48 g
Base qty
50
50
Delivery mode
Tube
Tube
STTH16L06CG-TR
STTH16L06CG
D2PAK
TO-220FPAB
1.48 g
1.70 g
1000
50
Tape & eel
Tube
STTH16L06CFP
STTH16L06CFP
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N. (TO-220FPAB) / 0.55 m.N. (TO-220AB)
Maximum torque value: 1.0 m.N. (TO-220FPAB) / 0.70 m.N. (TO-220AB)
Table 8: Revision History
Date
07-Sep-2004
Revision
1
Description of Changes
First issue
7/8
STTH16L06C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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