STTH16L06C ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) Up to 2 x 10 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 1.05 V trr (max) 35 ns K FEATURES AND BENEFITS ■ ■ ■ ■ A1 Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching & conduction losses K A2 K A1 A2 TO-220AB STTH16L06CT TO-220FPAB STTH16L06CFP K DESCRIPTION The STTH16L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH16L06CT STTH16L06CFP Marking STTH16L06CT STTH16L06CFP A2 A1 D2PAK STTH16L06CG Part Number STTH16L06CG STTH16L06GG-TR Marking STTH16L06CG STTH16L06CG Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current δ = 0.5 TO-220AB / D2PAK TO-220FPAB IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature Tc = 140°C Per diode Tc = 135°C Per device Tc = 130°C Per diode Tc = 120°C Per device Tc = 110°C Per diode Tc = 80°C Per device tp = 10ms sinusoidal Value Unit 600 V 30 A 8 16 10 20 8 16 90 A A -65 to + 175 °C 175 °C . September 2004 REV. 1 1/8 STTH16L06C Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case °C/W Per diode 2.5 TO-220FPAB Per diode 5 D2PAK TO-220FPAB Coupling Unit TO-220AB / D2PAK TO-220AB / Rth(c) Value (max). TO-220AB / Total 1.6 Total 3.8 0.7 D2PAK TO-220FPAB °C/W 2.5 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 150°C VF ** Forward voltage drop Tj = 25°C 25 IF = 8A 1.05 IF = 16A Unit 8 µA 240 V 1.35 2.08 Tj = 150°C Pulse test: Max. 1.8 Tj = 150°C Tj = 25°C Typ 1.28 1.64 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 I F (RMS) Table 6: Dynamic Characteristics (per diode) Symbol Parameter trr Reverse recovery time Tj = 25°C IRM Reverse recovery current Tj = 125°C IF = 8A VR = 400V dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25°C IF = 8A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25°C IF = 8A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 2/8 Test conditions Min. Typ Max. Unit IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/µs VR =30V 35 ns 40 55 4.5 6.5 A 200 ns 3.5 V STTH16L06C Figure 1: Conduction losses versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) P(W) 100 15 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 90 Tj=150°C (maximum values) 80 70 10 δ=1 60 Tj=150°C (typical values) 50 Tj=25°C (maximum values) 40 5 30 T 20 δ=tp/T IF(AV)(A) 10 tp 0 VFM(V) 0 0 2 4 6 8 10 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB & D2PAK) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 Single pulse tp(s) 0.0 Single pulse tp(s) 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Figure 5: Peak reverse recovery current versus dIF/dt (typical values, per diode) 1.E-03 1.E-01 1.E+00 1.E+01 Figure 6: Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) IRM(A) 18 400 VR=400V Tj=125°C 16 1.E-02 IF=2 x IF(AV) 14 VR=400V Tj=125°C 350 IF=IF(AV) 300 IF=2 x IF(AV) 12 IF=0.5 x IF(AV) 250 10 200 8 IF=IF(AV) IF=0.5 x IF(AV) 150 6 100 4 50 2 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/8 STTH16L06C Figure 7: Reverse recovery charges versus dIF /dt (typical values, per diode) Figure 8: Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor Qrr(nC) 1.6 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 VR=400V Tj=125°C IF< 2 x IF(AV) VR=400V Tj=125°C 1.4 IF=2 x IF(AV) 1.2 1.0 IF=IF(AV) 0.8 IF=0.5 x IF(AV) 0.6 0.4 0.2 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 100 200 300 400 500 Figure 9: Relative variations of dynamic parameters versus junction temperature 0 50 100 150 200 250 300 350 400 450 500 Figure 10: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.4 S factor 1.2 1.0 0.8 trr 0.6 IF=IF(AV) VR=400V Reference: Tj=125°C IRM QRR 0.4 0.2 Tj(°C) 0.0 25 50 75 100 IF=IF(AV) Tj=125°C dIF/dt(A/µs) 0 125 Figure 11: Forward recovery time versus dIF/dt (typical values, per diode) 50 100 150 200 250 300 350 400 450 500 Figure 12: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) tfr(ns) 180 100 F=1MHz VOSC=30mVRMS Tj=25°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 160 140 120 100 10 80 60 40 20 dIF/dt(A/µs) VR(V) 0 1 0 4/8 100 200 300 400 500 1 10 100 1000 STTH16L06C Figure 13: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35µm) (D2PAK) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 SCU(cm²) 0 0 5 10 15 20 25 30 35 40 Figure 14: TO-220AB Package Mechanical Data REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 5/8 STTH16L06C Figure 15: D2PAK Package Mechanical Data REF. A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESSTHAN 2mm Figure 16: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 6/8 A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° STTH16L06C Figure 17: TO-220FPAB Package Mechanical Data REF. A A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F E G1 G DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.7 0.018 0.027 0.75 1 0.03 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9 9.3 0.354 0.366 3 3.2 0.118 0.126 Table 7: Ordering Information ■ ■ ■ ■ Ordering type STTH16L06CT STTH16L06CG Marking STTH16L06CT STTH16L06CG Package TO-220AB D2PAK Weight 2.23 g 1.48 g Base qty 50 50 Delivery mode Tube Tube STTH16L06CG-TR STTH16L06CG D2PAK TO-220FPAB 1.48 g 1.70 g 1000 50 Tape & eel Tube STTH16L06CFP STTH16L06CFP Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. (TO-220FPAB) / 0.55 m.N. (TO-220AB) Maximum torque value: 1.0 m.N. (TO-220FPAB) / 0.70 m.N. (TO-220AB) Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 7/8 STTH16L06C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8