STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP8NC60 STP8NC60FP ■ ■ ■ ■ ■ VDSS RDS(on) ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP8NC60 VDS VDGR VGS Unit STP8NC60FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 7 7 (*) ID Drain Current (continuos) at TC = 100°C 4.4 4.4 (*) A Drain Current (pulsed) 28 28 (*) A Total Dissipation at TC = 25°C 125 30 W Derating Factor 1.0 0.24 W/°C IDM (●) PTOT dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed July 2001 3.5 - A V/ns 2500 V –65 to 150 °C 150 °C (1)ISD ≤7A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/9 STP8NC60/STP8NC60FP THERMAL DATA TO-220 TO-220FP 1 4.125 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 7 A 300 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A Min. Typ. Max. Unit 2 3 4 V 0.85 1.0 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 6.7 S 1060 pF Ciss Input Capacitance Coss Output Capacitance 145 pF Crss Reverse Transfer Capacitance 20 pF STP8NC60/STP8NC60FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 480V, ID = 7 A, VGS = 10V Typ. Max. Unit 17 ns 10 ns 34.5 48 nC 5.6 nC 17.5 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, ID = 7 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 8 ns 9 ns 18 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit 7 A Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD =7 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 28 A 1.6 V 530 ns 3.58 µC 13.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP8NC60/STP8NC60FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance STP8NC60/STP8NC60FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP8NC60/STP8NC60FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP8NC60/STP8NC60FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STP8NC60/STP8NC60FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/9 L4 STP8NC60/STP8NC60FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9