SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS(ON) S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability ▼ ▼ G1 ,G2 ▼ ▼ Product Summary Part Number SSD2009 BVDSS 50V RDS(on) ID 0.13Ω 3.0A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID Value Characteristic Drain-to-Source Voltage 50 Continuous Drain Current TA=25℃ 3.0 Continuous Drain Current TA=70℃ 2.3 ① Units V A IDM Drain Current-Pulsed 10.0 A VGS Gate-to-Source Voltage ±20 V Total Power Dissipation ( TA=25℃ ) 2.0 ( TA=70℃ ) 1.3 PD TJ , TSTG Operating and Junction Storage W - 55 to +150 Temperature Range ℃ Thermal Resistance Symbol Characteristic Typ. Max. Units RθJA Junction-to-Ambient -- 62.5 ℃/W Rev. A1 Dual N-CHANNEL POWER MOSFET SSD2009A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage 50 -- -- V VGS=0V,ID=250μA VGS(th) Gate Threshold Voltage 1.0 -- 3.0 V VDS= 5V ,ID=250μA -- -- 100 nA VGS=20V nA VGS=-20V IGSS Min. Typ. Max. Units Gate-Source Leakage , Forward Gate-Source Leakage , Reverse IDSS IDON RDS(on) gfs td(on) tr td(off) tf -- -- -100 -- -- 2.0 -- -- 25 On-State Drain-Source Current 10 -- -- Static Drain-Source Ω S Drain-to-Source Leakage Current On-State Resistance ② -- 0.065 0.13 -- 0.084 0.2 Forward Transconductance ② -- 7.0 Turn-On Delay Time -- 16 -20 Rise Time -- 16 20 Turn-Off Delay Time -- 40 70 Fall Time -- 23 50 Qg Total Gate Charge -- 17 25 Qgs Gate-Source Charge -- 1.8 -- Qgd Gate-Drain (“Miller”) Charge -- 3.9 -- μA A ns Test Condition VDS=40V VDS=40V,TC=55℃ VDS=5V ,VGS=10V VGS=10V,ID=3.0A VGS=4.5V,ID=1.5A VDS =15V,ID=3.0A VDD=25V,ID=1.0A, R0=6.0Ω, ②③ nC VDS=25V,VGS=10V, ②③ ID=2.0A Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Continuous Source Current IS (Body Diode) Test Condition Modified MOSFET Symbol -- -- 2.0 A Showing the Integral Reverse P-N Junction Rectifier ○D │ ─ │─ │ ─┘─│ │ ○ G │ │ │ │ ◀ │ │ ─ ─ ▲ ○S VSD Diode Forward Voltage ② -- -- 1.2 V TA=25℃,IS=1.5A,VGS=0V trr Reverse Recovery Time ② -- 100 -- ns TA=25℃,IF=1.5A,diF/dt=100A/μs Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Dual N-CHANNEL POWER MOSFET SSD2009A Fig 1. Output Characteristics Fig 2. Transfer Characteristics 10 10 Vgs= 10,9,8,7,6,5,4V 8 ID , Drain Current [A] ID , Drain Current [A] 8 6 4 Vgs= 3V 2 0 0 2 4 6 8 6 -55 oC 25 oC 4 150 oC 2 0 10 0 1 2 VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 5 6 Fig 4. Source-Drain Forward Voltage 0.12 0.10 VGS =4.5 V 0.08 0.06 VGS = 10 V 0.04 0.02 0 2 4 6 8 10 100 150 oC 25 oC 10-1 0.0 ID , Drain Current [A] 0.4 0.8 1.2 1.6 2.0 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 800 10 VGS , Gate-Source Voltage [V] Capacitance [pF] 4 101 0.14 @ Notes : 1. VGS = 0 V 2. f = 1 MHz 600 C iss 400 C oss 200 C rss 0 3 VGS , Gate-Source Voltage [V] 5 10 15 20 VDS , Drain-Source Voltage [V] 25 30 8 6 VDS = 25 V ID= 2.0A 4 2 0 0 4 8 12 QG , Total Gate Charge [nC] 16 20 Dual N-CHANNEL POWER MOSFET SSD2009A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 2.0 1.1 1.0 ID = 250 µA 0.9 1.6 1.2 VGS = 10 V ID = 3.0 A 0.8 0.4 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 100 Duty Cycle=0.5 0.2 PDM 10- 1 0.1 t1 t2 @ Notes : 1. Zθ J C (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 4. Surface Mounted 0.05 0.02 10- 2 - 4 10 Single Pulse 10- 3 125 TJ , Junction Temperature [oC] Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient Thermal Response BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 10- 2 10- 1 100 t1 , Square Wave Pulse Duration 101 [sec] 150 175 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5