FAIRCHILD SSH10N60A

SSH10N60A
Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 0.8 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
TO-3P
Low RDS(ON) : 0.646 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
o
ID
10
6.3
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TL
V
Continuous Drain Current (TC=100 oC )
Drain Current-Pulsed
TJ , TSTG
Units
600
Continuous Drain Current (TC=25 C )
IDM
PD
Value
A
1
O
40
+
_ 30
A
O
1
O
1
O
O3
545
mJ
10
A
2
V
19.3
mJ
3.0
V/ns
Total Power Dissipation (TC=25oC )
193
W
Linear Derating Factor
1.54
W/ oC
Operating Junction and
- 55 to +150
Storage Temperature Range
o
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R
θJC
Junction-to-Case
--
0.65
R
θCS
Case-to-Sink
0.24
--
Junction-to-Ambient
--
40
R θJA
Units
o
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
SSH10N60A
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆BV/∆TJ
Breakdown Voltage Temp. Coeff.
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
Gate Threshold Voltage
600
--
--
--
0.66
--
2.0
--
4.0
VDS=5V,ID=250 µA
VGS=30V
--
--
100
--
--
-100
--
--
25
--
--
250
--
--
0.8
Ω
VGS=10V,ID=5A
4
O
8.5
--
Ω
VDS=50V,ID=5A
4
O
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
Ciss
Input Capacitance
--
1750 2270
Coss
Output Capacitance
--
190
220
Crss
Reverse Transfer Capacitance
--
78
90
td(on)
Turn-On Delay Time
--
20
50
Rise Time
--
23
55
Turn-Off Delay Time
--
85
180
Fall Time
--
30
70
Qg
Total Gate Charge
--
74
95
Qgs
Gate-Source Charge
--
12
--
Qgd
Gate-Drain( “Miller “) Charge
--
35.4
--
tf
V
See Fig 7
Gate-Source Leakage , Reverse
Forward Transconductance
td(off)
VGS=0V,ID=250µ A
V/ oC ID=250 µ A
Gate-Source Leakage , Forward
gfs
tr
V
Test Condition
nA
µA
pF
VGS=-30V
VDS=600V
o
VDS=480V,TC=125 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=300V,ID=10A,
ns
RG=6.2 Ω
See Fig 13
4 O
5
O
VDS=480V,VGS=10V,
nC
ID=10A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
ISM
Pulsed-Source Current
1
O
--
--
40
VSD
Diode Forward Voltage
O
--
--
1.4
V
TJ=25oC,IS=10A,VGS=0V
trr
Reverse Recovery Time
--
440
--
ns
TJ=25oC,IF=10A
Qrr
Reverse Recovery Charge
--
4.7
--
µC
diF/dt=100A/µ s
4
10
A
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
o
2 L=10mH, I =10A, V =50V, R =27Ω, Starting T =25 C
O
AS
DD
G
J
o
O3 ISD <_10A, di/dt <_150A/ µs, VDD <_BVDSS , Starting T J =25 C
_ 2%
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
4
O
N-CHANNEL
POWER MOSFET
SSH10N60A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
ID , Drain Current
[A]
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
ID , Drain Current
[A]
VGS
Top :
100
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
10-1
10-1
100
101
150 oC
100
@ Notes :
1. VGS = 0 V
25 oC
10-1
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
[A]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
2.0
IDR , Reverse Drain Current
RDS(on) , [Ω ]
Drain-Source On-Resistance
2. VDS = 50 V
3. 250 µs Pulse Test
- 55 oC
1.5
VGS = 10 V
1.0
VGS = 20 V
0.5
@ Note : TJ = 25 oC
10
20
30
100
40
@ Notes :
1. VGS = 0 V
150 oC
2. 250 µs Pulse Test
25 oC
10-1
0.2
0.0
0
101
ID , Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
[V]
Crss= Cgd
VGS , Gate-Source Voltage
Capacitance
[pF]
3000
C iss
2000
1000
00
10
C oss
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
101
VDS , Drain-Source Voltage [V]
VDS = 120 V
10
VDS = 300 V
VDS = 480 V
5
@ Notes : ID = 10.0 A
0
0
20
40
60
QG , Total Gate Charge [nC]
80
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
SSH10N60A
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
0.5
2. ID = 5.0 A
0.0
-75
175
-50
-25
0
25
50
75
100
125
150
175
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
[A]
Operation in This Area
is Limited by R DS(on)
100 µs
ID , Drain Current
10
10 µs
1 ms
101
10 ms
DC
100
@ Notes :
1. TC = 25 oC
10-1
100
101
8
6
4
2
2. TJ = 150 oC
3. Single Pulse
102
0
25
103
50
75
100
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Fig 11. Thermal Response
Thermal Response
100
ZθJC(t) ,
ID , Drain Current
[A]
12
102
D=0.5
@ Notes :
1. Zθ J C (t)=0.65
0.2
10- 1
0.1
PDM
0.02
t1
single pulse
t2
10- 2
10- 5
Max.
3. TJ M -TC =PD M *Zθ J C (t)
0.05
0.01
o C/W
2. Duty Factor, D=t1 /t2
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
125
150
N-CHANNEL
POWER MOSFET
SSH10N60A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
SSH10N60A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
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with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.