STMICROELECTRONICS BU208D

BU208D
BU508D/BU508DFI

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
■
BU208D AND BU508DFI ARE STM
PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
JEDEC TO-3 METAL CASE
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
TO-3
1
2
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured
using
Multiepitaxial
Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
3
3
2
2
TO-218
1
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
1500
V
Collector-Emitter Voltage (I B = 0)
700
V
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
8
A
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
V EBO
IC
I CM
Collector Peak Current (tp < 5 ms)
o
P t ot
Total Dissipation at T c = 25 C
T stg
St orage Temperature
Tj
June 1998
Max. Operating Junction Temperature
15
TO - 3
T O - 218
150
125
-65 to 175 -65 to 150
175
150
A
ISOW ATT 218
50
W
-65 to 150
o
C
150
o
C
1/8
BU208D / BU508D / BU508DFI
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
T O-3
TO-218
ISO WATT218
1
1
2.5
Max
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
1
2
mA
mA
300
mA
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus)
Collector-Emitter
Sustaining Voltage
I C = 100 m A
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 4.5 A
IB = 2 A
1
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 4.5 A
IB = 2 A
1.3
V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
I C = 4.5 A hFE = 2.5 VCC = 140 V
L C = 0.9 mH L B = 3 µH
VF
Diode Forward Voltage
IF = 4 A
fT
Transition F requency
I C = 0.1 A
I EBO
o
T j = 125 C
700
V
7
550
ms
ns
2
VCE = 5 V
f = 5 MHz
7
V
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area (TO-3)
2/8
Safe Operating Area (TO-218/ISOWATT218)
BU208D / BU508D / BU508DFI
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
Switching Time Percentance vs. Case
3/8
BU208D / BU508D / BU508DFI
Figure 1: Inductive Load Switching Test Circuit.
4/8
BU208D / BU508D / BU508DFI
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
5/8
BU208D / BU508D / BU508DFI
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
6/8
1
2
3
P025A
BU208D / BU508D / BU508DFI
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1
2
3
L1
L4
P025C
7/8
BU208D / BU508D / BU508DFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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