High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter Absolute Maximum Ratings Symbol 2.Collector 3.Base TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) * 3 A IB Base Current (DC) 0.75 A IBP Base Current (Pulse) * 1.5 A PC Collector Dissipation (TC = 25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% ©2005 Fairchild Semiconductor Corporation FJE3303 Rev. B 1 www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 9 V 10 µA 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain * VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A Cob Output Capacitance VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = -0.2A RL = 125Ω tON Turn On Time tSTG Storge Time tF Fall Time 8 5 21 4 MHz 21 pF 1.1 µs 4.0 µs 0.7 µs * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 8 ~ 16 14 ~ 21 2 FJE3303 Rev. B www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 1.6 100 VCE = 2V 1.4 1.2 IB = 120 mA hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT o Ta = 75 C o Ta = 125 C 1.0 0.8 IB = 40 mA 0.6 IB = 20 mA 0.4 o Ta = - 25 C o Ta = 25 C 10 0.2 0.0 0 1 2 3 4 5 6 7 8 9 1 1E-3 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 o VCE(sat) [V], SATURATION VOLTAGE o o Ta = 25 C 1 o Ta = - 25 C 0.1 0.01 0.01 0.1 IC = 4 IB Ta = 75 C VBE(sat) [V], SATURATION VOLTAGE Ta = 125 C IC = 4 IB 1 o o 1 o o Ta = 125 C 0.1 0.01 10 Ta = 25 C Ta = - 25 C IC [A], COLLECTOR CURRENT Ta = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 10 tSTG & tF [µ s], SWITCHING TIME tSTG & tF [µ s], SWITCHING TIME 10 tSTG 1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 tF 0.1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 3 FJE3303 Rev. B tSTG www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 10 10 1ms 100µs 5ms IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IC (Pulse) IC (DC) 1 0.1 o 1 TC = 25 C Single Pulse IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.01 1 10 100 0.1 100 1000 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC [W], COLLECTOR POWER DISSIPATION 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o Ta [ C], AMBIENT TEMPERATURE 4 FJE3303 Rev. B www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics FJE3303 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions 8.00 ±0.30 ±0.20 3.25 ±0.20 ø3.20 ±0.10 11.00 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 13.06 0.75 ±0.10 16.10 ±0.30 ±0.20 1.60 ±0.10 #1 2.28TYP [2.28±0.20] +0.10 0.50 –0.05 2.28TYP [2.28±0.20] Dimensions in Millimeters 5 FJE3303 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FJE3303 Rev. B www.fairchildsemi.com FJE3303 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS