VNP49N04FI / VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP49N04FI VNB49N04 VCLAMP R DS(ON) ILIM 42 V 20 mΩ 49 A VNV49N04 n n n n n n n n n ISOWATT220 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION 3 1 10 3 1 TO-263 (D2PAK) 1 PowerSO-10TM ORDER CODES: DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET ISOWATT220 PowerSO-10 TM TO-263 (D2PAK) DESCRIPTION The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology, intended for replacement of standard Power 2 VNP49N04FI VNV49N04 VNB49N04 MOSFETS from DC up to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM DRAIN Overvoltage Clamp INPUT Gate Control Linear Current Limiter Over Temperature Status SOURCE October 1999 1/14 1 VNP49N04FI / VNB49N04 / VNV49N04 ABSOLUTE MAXIMUM RATING Symbol Parameter VDS VIN ID IR VESD P tot Drain-source Voltage (VIN=0V) Input Voltage Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Total Dissipation at Tc=25°C Tj Tc Tstg Operating Junction Temperature Case Operating Temperature Storage Temperature Value D2PAK ISOWATT220 PowerSO-10TM Internally Clamped 18 Internally Limited -50 2000 125 125 40 5 4 3 2 1 6 7 8 9 10 SOURCE SOURCE N.C. SOURCE SOURCE 3 SOURCE 2 DRAIN 1 INPUT 11 DRAIN PowerSO-10 TM D2PAK 3 SOURCE 2 DRAIN 1 INPUT ISOWATT220 2/14 1 V V A A V W °C °C °C Internally limited Internally limited -55 to 150 CONNECTION DIAGRAM (TOP VIEW) INPUT INPUT INPUT INPUT INPUT Unit VNP49N04FI / VNB49N04 / VNV49N04 THERMAL DATA Symbol Parameter Rthj-case R thj-amb Thermal Resistance Junction-case}}} Thermal Resistance Junction-ambient MAX MAX PowerSO-10 1 50 Value D2PAK 1 62.5 ISOWATT220 3.12 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (-40°C < Tj < 125°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH V INCL Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input-Source Reverse Clamp Voltage Test Condit ions Min Typ Max Unit ID=200 mA; VIN=0 34 42 50 V ID=2mA; VIN=0 33 IIN= -1mA -1.2 V -0.1 V 70 µA 220 µA 250 550 µA Typ Max 3 0.04 Unit V Ω 0.05 Ω Max Unit V DS=13V; VIN=0V V DS=25V; VIN=0V IDSS Zero Input Voltage Drain Current (VIN=0V) IISS Supply Current from Input V DS=0V; VIN=10V Pin ON (*) Symbol VIN(th) Parameter Input Threshold Voltage R DS(on) Static Drain-source On Resistance Test Condit ions V DS=VIN; ID + IIN=1mA V IN=10V; ID=25A Min 0.8 V IN=5V; ID=25A DYNAMIC Symbol gfs (*) C OSS Parameter Forward Transconductance Output Capacitance Test Condit ions VDS =13V; ID=25A; Tc=25°C Min Typ 25 30 VDS =13V; f=1MHz; VIN=0V; Tc=25°C S 1100 1500 pF Typ 200 1300 800 300 1.3 3.8 12 6.1 Max 600 3600 2400 900 3.8 10.4 24 17 Unit ns ns ns ns µs µs µs µs SWITCHING (**) Symbol td(on) tr td(off) tf td(on) tr td(off) tf Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (di/dt) on Turn-on Current Slope Qi Total Input Charge Test Conditions VDS =15V; ID=25A Vgen=10V; Rgen=10 Ω (see figure 3) VDS =15V; ID=25A Vgen=10V; Rgen=1000Ω (see figure 3) VDS =15V; ID=25A VIN=10V; Rgen=10 Ω VDS =15V; ID=25A; VIN=10V Min 25 A/µs 100 nC 3/14 1 VNP49N04FI / VNB49N04 / VNV49N04 SOURCE DRAIN DIODE Symbol VSD (*) trr (**) Q rr (**) IRRM (**) Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions I SD=25A; VIN=0V I SD=25A; di/dt=100A/µs Min V DS=30V; Tj=25°C Reverse Recovery Current (see test circuit, figure 5) Typ Max 1.8 250 910 Unit V ns nC 7.5 A PROTECTIONS Symbol ILIM tdlim (**) Tjsh (**) Tjrs (**) Igf (**) Eas (**) Parameter Drain Current Limit Step Response Current Limit Test Conditions V IN=10V; VDS=13V V IN=5V; VDS=13V V IN=10V 2 Typ 49 Max 70 Unit A 28 49 35 70 50 A µs 90 150 µs V IN=5V Overtemperature °C 150 Shutdown Overtemperature Reset V IN=10V; VDS=13V 50 °C mA V IN=5V; VDS=13V Starting Tj=25°C; VDS=20V 20 mA Single Pulse Avalanche Energy V IN=10V; Rgen=1KΩ; L=6mH Fault Sink Current 135 (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% (**) Parameters guaranteed by design/characterization 4/14 Min 28 4 J VNP49N04FI / VNB49N04 / VNV49N04 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C. - STATUS FEEDBACK: in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100Ω. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)). 5/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Thermal Impedance for ISOWATT220 Thermal Impedance for D2PAK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 6/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Temperature Threshold Voltage vs Normalized On Resistance vs Temperature 7/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 8/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 9/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Time Test Circuits for Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit for Inductive Load Switching and Diode Recovery Times Fig. 6: Waveforms 10/14 1 VNP49N04FI / VNB49N04 / VNV49N04 ISOWATT220 MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 A 4.4 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 30.6 1.126 L2 16 L3 0.630 28.6 1.204 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 B D A E L4 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 11/14 1 VNP49N04FI / VNB49N04 / VNV49N04 TO-263 (D2PAK) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.70 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL ”A” DETAIL ”A” A1 B2 E B G L2 12/14 MAX. L L3 VNP49N04FI / VNB49N04 / VNV49N04 PowerSO-10 MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 1.35 0.049 14.40 0.543 e 1.27 F 1.25 H 13.80 h 0.050 0.50 Q 0.567 0.002 1.70 α 0.053 0.067 0º 8º B 0.10 A B 10 = E4 = = = E1 = E3 = E2 = E = = = H 6 = = 1 5 e 0.25 B SEATING PLANE DETAIL ”A” A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α 13/14 1 VNP49N04FI / VNB49N04 / VNV49N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . http://www.st.com 14/14