FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Industrial Use Equivalent Circuit C B 1 1.Base D2-PAK 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FJB102 FJB102 D2-PAK 13” Dia - 800 ©2005 Fairchild Semiconductor Corporation FJB102 Rev. A 1 www.fairchildsemi.com Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 10 ICBO Collector Cut-off Current VCB = 100V, IE = 0 50 ICEO Collector Cut-off Current VCE = 50V, IE = 0 50 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE DC Current Gain VCE = 4V, IC = 3A VCE = 4V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA 2.0 V IC = 8A, IB = 80mA 2.5 V 1000 200 V V µA 20000 VBE(ON) Base-Emitter Saturation Voltage VCE = 4V, IC = 8A 2.8 V Cob Output Capatitance VE = 10V, IE = 0, f = 1MHz 200 pF FJB102 Rev. A 2 www.fairchildsemi.com FJB102 High Voltage Power Darlington Transistor Electrical Characteristics Figure 1. Static Characterstic Figure 2. DC Current Gain 5 10k VCE = 4V 4 3 IB = 300µA 2 IB = 200µA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA 1 1k IB = 100µA 0 0 1 2 3 4 100 0.1 5 1 Figure 4. Collector Output Capacitance 10k 10k IE=0, f=1MHz IC = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 3. Saturation Voltage VBE(sat) 1k VCE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 Figure 5. Forward Biased Safe Operating Area 100 120 PC[W], COLLECTOR POWER DISSIPATION IC[A], COLLECTOR CURRENT 10 Figure 6. Power Derating 100 1ms 10 5ms DC 100µs 1 0.1 0.01 0.1 1 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE FJB102 Rev. A 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE 3 www.fairchildsemi.com FJB102 High Voltage Power Darlington Transistor Typical Performance Characteristics FJB102 High Voltage Power Darlington Transistor Mechanical Dimensions (0.40) D2-PAK 9.90 4.50 ±0.20 +0.10 0.80 ±0.10 2.54 TYP (0.75) 0.10 ±0.15 2.40 ±0.20 2.54 ±0.30 2.00 ±0.10 15.30 ±0.30 1.20 ±0.20 4.90 ±0.20 9.20 ±0.20 1.30 –0.05 1.40 ±0.20 1.27 ±0.20 ° ~3 0° ±0.10 +0.10 0.50 –0.05 2.54 TYP 4.90 ±0.20 (2XR0.45) 9.20 ±0.20 (7.20) ±0.20 15.30 ±0.30 10.00 (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters FJB102 Rev. A 4 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16