FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1(Typ.)=2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 600 Units V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 6 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C C B RB R1 R 1 ≅ 2000Ω R B ≅ 700Ω E * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 500µA, IE = 0 Min. 600 Typ. Max. Units V BVCER Collector-Emitter Breakdown Voltage IC = 1mA, RBE = 330Ω 600 V BVCEO(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB = 50mA, L=25mH 275 V 10 BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 ICBO Collector Cut-off Current VCB = 600V, IE = 0 IEBO Emitter Cut-off Current VEB = 10V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A V 1000 1000 0.1 mA 0.1 mA 5000 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 5mA 1.5 VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 5mA 6.0 Cob Output Capacitance VCB = 10V, IE = 0, f=1MHz ©2003 Fairchild Semiconductor Corporation 110 V V pF Rev. A, May 2003 FJP9100 Typical Characteristics 5 10k o Ta = 75 C o 4 Ta = 125 C DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB = 1.4mA 3 IB = 0.6mA IB = 0.4mA 2 1k o Ta = 25 C o Ta = - 25 C 100 1 V CE = 5V IB = 0 0 0 1 2 3 4 5 6 10 0.1 7 1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC current Gain 100 100 IC = 400 IB IC = 400 IB VBE(sat), SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC [A], COLLECTOR CURRENT o Ta = 125 C 10 o Ta = 75 C o 1 Ta = 25 C o Ta = - 25 C 0.1 0.1 1 10 o Ta = 125 C o Ta = 75 C o 1 Ta = 25 C o Ta = - 25 C 0.1 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10k 1000 Cob [pF], OUPUT CAPACITANCE RB & R1 [Ω], RESISTANCE f = 1MHz, IE = 0 R1 1k RB 100 -50 -25 0 25 50 75 100 125 150 o TA [ C], ABBIENT TEMPERATURE Figure 5. RB & R1 vs. Ambient Temperature ©2003 Fairchild Semiconductor Corporation 100 10 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 6. Output Capacitance Rev. A, May 2003 FJP9100 Typical Characteristics (Continued) PC [W], COLLECTOR POWER DISSIPATION 50 45 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC [ C], CASE TEMPERATURE Figure 7. Power Derating ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP9100 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2