CQY80N(G) Vishay Telefunken Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 These couplers perform safety functions according to the following equipment standards: D VDE 0884 95 10805 VDE Standards 1 2 A (+) C (–) 3 n.c. Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking CQY80N > 50% CQY80NG1) > 50% 1) G = Leadform 10.16 mm; G is not market on the body 152 Remarks Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Features D Rated recurring peak voltage (repetitive) Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D Isolation materials according to UL94-VO D Pollution degree 2 D VDE 0884, Certificate number 94778 (DIN/VDE 0110 / resp. IEC 664) VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D CTR > 50% D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 60 1.5 100 125 Unit V mA Symbol VCEO VECO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C A mW °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s 153 CQY80N(G) Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. 10 200 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Typ. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Current Transfer Ratio (CTR) Parameter IC/IF 154 Test Conditions VCE = 5 V, IF = 10 mA Type CQY80N, CQY80NG Symbol CTR Min. 0.5 Typ. 0.9 Max. Unit Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Partial discharge test voltage – Routine test Partial discharge g test voltage – Lot test (sample test) Test Conditions 100%, ttest = 1 s Symbol Vpd Min. 1.6 tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C VIOTM Vpd RIO RIO RIO 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W (construction test only) VIOTM Ptot – Total Power Dissipation ( mW ) 275 V 250 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Psi (mW) 225 200 175 VPd 150 VIOWM VIORM 125 100 75 Isi (mA) 50 25 0 0 0 95 10923 25 50 75 100 125 150 Tamb – Ambient Temperature ( °C ) Figure 1. Derating diagram Rev. A3, 11–Jan–99 175 t3 ttest t4 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 155 CQY80N(G) Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W ((see figure g 3)) Symbol td tr tf ts ton toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure g 4)) Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 +5V IF 96 11698 IC = 5 mA ; Adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms IF 0 t tp Channel I 50 W 100 W Unit ms ms ms ms ms ms ms ms Channel II IC Oscilloscope RL CL w 1 MW v 20 pF 100% 90% 14943 Figure 3. Test circuit, non-saturated operation 10% 0 t tr I 0 F I td +5V ts tf F I ton C R = 50 W G t p = 0.01 T tp tion td tr ton (= td + tr) t = 50 ms p toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Channel I Channel II 50W 14944 1 kW Oscilloscope R 1 MW L C 20 pF L w v Figure 4. Test circuit, saturated operation 156 Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 I CB – Collector Base Current ( mA ) I F – Forward Current ( mA ) 10.0 1.0 0.1 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage 1 100 10 IF – Forward Current ( mA ) 95 11052 Figure 10. Collector Base Current vs. Forward Current 100 1.5 VCE=5V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio VS=5V 0.001 0 1.3 100 1 100.0 1.4 75 Figure 9. Collector Dark Current vs. Ambient Temperature 1000.0 96 11862 50 Tamb – Ambient Temperature ( °C ) 95 11026 Figure 6. Total Power Dissipation vs. Ambient Temperature 25 VCE=5V 10 1 0.1 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11920 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A3, 11–Jan–99 0.01 0.1 95 11053 1 10 100 IF – Forward Current ( mA ) Figure 11. Collector Current vs. Forward Current 157 CQY80N(G) Vishay Telefunken 1000 20mA IC – Collector Current ( mA ) IF=50mA 10mA 10 5mA 2mA 1 1mA CTR – Current Transfer Ratio ( % ) 100 VCE=5V 100 0.1 1 0.1 1 100 10 VCE – Collector Emitter Voltage ( V ) 95 11054 0.8 0.6 CTR=50% 0.2 20% 10% 0 1 ton 20 Saturated Operation VS=5V RL=1kW 10 0 5 800 600 400 200 10 20 15 IF – Forward Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) VCE=5V hFE – DC Current Gain 30 95 11017 1000 20 Non Saturated Operation VS=5V RL=100W ton 15 toff 10 5 0 0.1 1 10 100 IC – Collector Current ( mA ) Figure 14. DC Current Gain vs. Collector Current 158 toff 40 0 Figure 13. Collector Emitter Saturation Voltage vs. Collector Current 0 0.01 100 10 50 100 10 IC – Collector Current ( mA ) 95 11055 1 IF – Forward Current ( mA ) Figure 15. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) 1.0 0.4 0.1 95 11057 Figure 12. Collector Current vs. Collector Emitter Voltage 95 11056 10 0 95 11016 2 4 6 8 10 IC – Collector Current ( mA ) Figure 17. Turn on / off Time vs. Collector Current Rev. A3, 11–Jan–99 CQY80N(G) Vishay Telefunken Type Date Code (YM) XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 18. Marking example Dimensions of CNY80NG in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Rev. A3, 11–Jan–99 159 CQY80N(G) Vishay Telefunken Dimensions of CNY80N in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 160 Rev. A3, 11–Jan–99