E L E C T R O N I C RTM2302 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. RTM2302CX Absolute Maximum Rating (Ta = 25℃ Packing Tape & Reel Package SOT-23 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±8 V ID 2.4 A IDM 10 A PD 1.25 W Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C o Ta = 75 C 0.8 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 100 Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. http:// www.sirectsemi.com o C/W RTM2302 Electrical Characteristics Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Drain-Source On-State Resistance VGS = 4.5V, ID = 3.6A RDS(ON) -- 50 65 mΩ Drain-Source On-State Resistance VGS = 2.5V, ID = 3.1A RDS(ON) -- 75 95 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.45 -- -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 8V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ≧ 5V, VGS = 4.5V ID(ON) 6 -- -- A Forward Transconductance VDS = 5V, ID = 3.6A gfs -- 10 -- S Total Gate Charge VDS = 10V, ID = 3.6A, Qg -- 5.2 10 Gate-Source Charge VGS = 4.5V Qgs -- 0.65 -- Qgd -- 1.5 -- Dynamic Gate-Drain Charge Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 7 15 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 55 80 Turn-Off Delay Time RG = 6Ω td(off) -- 16 60 tf -- 10 25 Turn-Off Fall Time nC nS Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 450 -- Output Capacitance f = 1.0MHz Coss -- 70 -- Crss -- 43 -- IS -- -- 1.6 A VSD -- 0.75 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% http:// www.sirectsemi.com RTM2302 Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) http:// www.sirectsemi.com RTM2302 Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) SOT-23 Mechanical Drawing A B F DIM E G D A B C D E F G SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 0.39 1.78 0.51 1.59 1.04 0.07 2.91 0.42 2.03 0.61 1.66 1.08 0.09 0.113 0.015 0.070 0.020 0.063 0.041 0.003 0.115 0.017 0.080 0.024 0.065 0.043 0.004 C Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com