TSM6866D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Ordering Information Part No. TSM6968DCA Packing Tape & Reel Package TSSOP-8 3,000/per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ± 12 V Continuous Drain Current, VGS @4.5V. ID 6.5 A Pulsed Drain Current, VGS @4.5V IDM 30 A PD 1.5 W Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction Temperature 0.96 +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Rθjf 35 o C/W 83 o C/W TJ Operating Junction and Storage Temperature Range Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. TSM6866D 1-1 Rθja 2003/12 rev. A Unit Electrical Characteristics Rate ID = 6.5A, (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- Drain-Source On-State Resistance VGS = 4.5V, ID = 6.5A RDS(ON) -- 22 28 Drain-Source On-State Resistance VGS = 2.5V, ID = 5.5A RDS(ON) -- 30 40 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.5 1.0 -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ± 4.5V, VDS = 0V IGSS -- -- ± 100 nA Gate Body Leakage VGS = ± 12V, VDS = 0V IGSS -- -- ± 10 mA On-State Drain Current VGS = 4.5V, VDS >= 5V ID(ON) 30 -- -- A Forward Transconductance VDS = 10V, ID = 6.5A gfs -- 40 -- S Total Gate Charge VDS = 10V, ID = 6.5A, Qg -- 12 -- Gate-Source Charge VGS = 4.5V Qgs -- 2 -- Qgd -- 3.5 -- Dynamic Gate-Drain Charge Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 75 100 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 125 150 Turn-Off Delay Time RG = 6Ω td(off) -- 600 720 tf -- 300 360 Turn-Off Fall Time nC nS Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 870 -- Output Capacitance f = 1.0MHz Coss -- 320 -- Crss -- 240 -- IS -- -- 1.0 A VSD -- 0.7 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM6866D 2-2 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM6866D 3-3 2003/12 rev. A TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSM6866D 4-4 TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.05 1.20 0.041 0.049 0.05 0.15 0.002 0.009 0.127 0.005 0.50 0.70 0.020 0.028 2003/12 rev. A