TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power™ for Load Switching and PA Switch S S G D G VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ Bump Side View Patent Pending Description TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when Less than 25% of the area of a SSOT-6 mounted on PCB Excellent thermal and electrical capabilities 2 Occupies only 2.25mm of PCB area Lead free solder bumps available Block Diagram Ordering Information Part No. TSM8405P Packing Tape & Reel Q’ty 3kpcs / 7” Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12V V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID - 4.9 A Pulsed Drain Current IDM - 10 A Maximum Power Dissipation (Steady State) PD 1. 5 W Operating Junction Temperature TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Operating Junction and Storage Temperature Range Thermal Performance Parameter Unit Junction to Ambient Thermal Resistance Rθja 85 o Junction to Balls Thermal Resistance RθjR 12 o TSM8405P 1-1 2003/10 rev. G C/W C/W Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS -- -- -12 V Drain-Source On-State Resistance VGS = - 4.5V, ID = -1.0A RDS(ON) -- -- 50 mΩ VGS = - 2.5V, ID = -1.0A -- -- 70 VGS = - 1.8V, ID = -1.0A -- -- 90 VGS(TH) -- - 0.7 -- V IDSS -- -- - 1.0 uA -- -- - 5.0 Gate Threshold Voltage Zero Gate Voltage Drain Current VDS = VGS, ID = - 250uA VDS =-12V, Ta=25 C o VGS = 0V Gate Body Leakage o Ta=70 C VGS = ± 8V, VDS = 0V IGSS -- -- ± 100 VDS = - 6V, ID = - 1.0A, Qg -- 9.0 -- nA Dynamic Total Gate Charge VGS = - 4.5V nC Input Capacitance VDS = - 12V, VGS = 0V, Ciss -- 800 -- Output Capacitance f = 1.0MHz Coss -- 250 -- Crss -- 100 -- IS -- -- - 1.0 A Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.0A, VGS = 0V VSD -- - 0.7.1 - 1.2 V Source-Drain Reverse Recovery IS = - 1.0A, VGS = 0V, Trr -- 40 -- nS Time di / dt = 100A / uS Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM8405P 2-2 2003/10 rev. G Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM8405P 3-3 2003/10 rev. G Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM8405P 4-4 2003/10 rev. G Dimensional Outline and Pad Layout Ø 0.35mm Solder Mask Ø ~ 0.32mm (Solder Mask Defined Pads) D D 0.80mm G SILICON S 0.27mm 0.80mm D = Drain Pad S = Source Pad G = Gate Pad 0.757mm +/-0.03mm LAND PATTERN RECOMMENDATION 1.55mm +/-0.05mm 0.30mm 1.55mm +/- 0.05mm 0.80mm EXXXX BACKSIDE VIEW (No Bump Side View) Mark on backside of die E = 8405P Product Code XXXX = Lot Traceability Code Mark is located in lower right quadrant on top of Drain pad. Gate pad is located in lower left quadrant. Bump Ø 0.37mm 0.80mm 0.30mm Bumps are Lead Free solder 96.8 Sn / 2.6 Ag / 0.6 Cu Patents are pending on the product described in the data sheet. TM Lateral Power TSM8405P and MicroSURFTM are trademarks of Great Wall Semiconductor Corporation. 5-5 2003/10 rev. G BGA FET Tape and reel Specification 1. Tape and Reel 1.1. Reel Size: 7 inch diameter. 1.2. Qty / Reel: 3,000pcs 1.3. Peel Strength: 1.3.1. Peel strength must be between 20 to 80 grams. 1.3.2. Minimum peel back length is 150 mm. 1.3.3. Peel back speed must be between 300 +/-5 mm per minute. 1.3.4. Peel back angle must be between 165 to 185 degrees with respect to the component carrier along the longitudinal axis of the carrier tape. 1.3.5 Peel strength test must be performed at the trailer. 1.4. Part Orientation: Marking in upper right quadrant 2. Tape Leader and Trailer Die Size 1.5 mm x 1.5 mm 3. Leader 500 mm Trailer 160 mm Tape Dimension Die Size Tape size W1 C D K H P F B 1.5 x 1.5 x 0.8 8 8.0+0.3 - 0.1 1.73±0.05 1.73±0.05 1,19±0.10 0.254±0.02 4.0 4.0 1.75±0.1 TSM8405P 6-6 2003/10 rev. G