PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features Excellent thermal characteristics High power and current handling capability Lead free solder balls available 12A, 20V RDS(ON) =3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Description Internal Block Diagram Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. D Ds ng i d n e tP Paten G S Pin Configuration Standard Application MicroSurf™ for High Frequency DC-DC Converters Bottom: Bump Side Rev. 1 05/2003 -1- TSC Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +12 V ID 6 A 25 A PD 2.2 W TJ, TSTG - 55 to +150 °C Thermal Resistance, Junction-to-Ambient RθJA 56 °C/ W Thermal Resistance, Junction-to-Ball RθJR 4.5 °C/ W Thermal Resistance, Junction-to-Case RθJC 0.6 °C/ W TS12N20CS Electrical Specifications TA = 25°C unless otherwise specified Drain Current – Continuous – Pulsed Power Dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics Characteristics Drain-Source Breakdown Voltage Symbol Conditions Min Typ Max Unit BVDSS VGS = 0V, ID = 250µA 20 -- -- V Gate-Body Leakage IGGS VGS = ±12V, VDS =0V -- -- ±150 nA Zero Gate Voltage Drain Current IDSS Tj=150°C, VDS =20V, VGS = 0V -- -- 250 uA Drain to Drain Sense Leakage IDDS Tj=150°C, VDS =20V, VGS = 0V -- -- 250 uA VGS = 4.5V, ID = 12A -- 3.9 -- mΩ RDSDS(on) VGS = 4.5V, ID = 0.35A -- 137 -- mΩ VGS(th) VDS =VGS , ID = 250uA -- 1.3 -- V Static Drain-Source On-Resistance Drain Sense On-Resistance Gate Threshold Voltage RDS(on) Total Gate Charge Qg VDS =20V, VGS = 4.5V, ID = 12A -- 19.8 -- nC Gate Resistance Rg VDS =0V, f =1MHz -- 0.4 -- Ohms Output Capacitance Coss VDS =20V, VGS =0V, f =1MHz -- 2.4 -- nF Input Capacitance Ciss VDS =20V, VGS =0V, f =1MHz -- 320 -- pF Reverse transfer capacitance Crss VDS =20V, VGS =0V, f =1MHz -- TBD -- pF If = 12A, di/dt =100A/us Tj=150°C -- -- 40 ns Is= 12A, VGS =0V -- 0.75 -- V VGS =4.5V, VDS =1V 25 -- -- A Single Pulse 10us, VDS>BVDSS 2.5 -- -- mJ Reverse Recovery time Source-Drain Diode Forward On-Voltage Source-Drain Diode trr VSD On-State Drain Current ID(on) Avalanche Energy UIS Eas Rev. 1 05/2003 -2-