UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19Ω Features Descripition • RDS(on) = 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Low gate charge (Typ. 46nC) • Low Crss (Typ.25pF) • Fast switching • 100% avalanche tested • Improved dv/dt apability • RoHS compliant D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 23 -Continuous (TC = 100oC) - Pulsed Ratings 400 A 13.8 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 23 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns 92 A (Note 2) 1190 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 235 W 1.8 W/oC -55 to +150 o C 300 o C Thermal Characteristics Min. Max. RθJC Symbol Thermal Resistance, Junction to Case Parameter - 0.53 RθCS Thermal Resistance, Case to Sink Typ. 0.24 - RθJA Thermal Resistance, Junction to Ambient - 40 ©2007 Fairchild Semiconductor Corporation FDA24N40F Rev. A 1 Units o C/W www.fairchildsemi.com FDA24N40F N-Channel MOSFET December 2007 Device Marking FDA24N40F Device FDA24N40F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V ID = 250µA, Referenced to 25oC - 0.5 - V/oC VDS = 400V, VGS = 0V Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 320V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 11.5A - 0.15 0.19 Ω gFS Forward Transconductance VDS = 20V, ID = 11.5A - 29 - S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V ID = 23A (Note 4, 5) - 2280 3030 pF - 370 490 pF - 25 38 pF - 46 60 nC - 13 - nC - 18 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDS = 200V, ID = 23A RG = 25Ω (Note 4, 5) - 40 90 ns - 92 195 ns - 120 250 ns - 75 160 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 23 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 92 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 23A - - 1.5 V trr Reverse Recovery Time - 110 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 23A dIF/dt = 100A/µs - 0.3 - µC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4.5mH, IAS = 23A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDA24N40F Rev. A 2 www.fairchildsemi.com FDA24N40F N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FDA24N40F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 70 Figure 2. Transfer Characteristics 100 1 o 10 150 C o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 0.1 0.02 0.1 1 VDS,Drain-Source Voltage[V] 1 10 15 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 0.28 0.24 VGS = 10V VGS = 20V 0.20 0.16 o 150 C *Note: TJ = 25 C 0 20 40 60 ID, Drain Current [A] 10 *Notes: 1. VGS = 0V 1 0.0 80 Figure 5. Capacitance Characteristics 2. 250µs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 10 5000 4000 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss 3000 o 25 C o Capacitances [pF] 8 200 0.32 0.12 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.36 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz 2000 1000 VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 Crss 0 0.1 FDA24N40F Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 30 3 *Note: ID = 23A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 200 100 30µs 100µs 1.1 1ms ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 10 DC *Notes: 0.1 *Notes: 1. VGS = 0V 2. ID = 250µA -50 0 50 100 150 o TJ, Junction Temperature [ C] Operation in This Area is Limited by R DS(on) 1 0.9 0.8 -100 10ms o 1. TC = 25 C o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 800 VDS, Drain-Source Voltage [V] Figure 9. Maximum Drain Current vs. Case Temperature 25 ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 *Notes: 0.01 t2 o 1. ZθJC(t) = 0.53 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDA24N40F Rev. A PDM 0.05 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDA24N40F N-Channel MOSFET Typical Performance Characteristics (Continued) FDA24N40F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA24N40F Rev. A 5 www.fairchildsemi.com FDA24N40F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA24N40F Rev. A 6 www.fairchildsemi.com FDA24N40F N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA24N40F Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ® tm SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 FDA24N40F Rev. A 8 www.fairchildsemi.com FDA24N40F N-Channel MOSFET TRADEMARKS