AO4404B N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404B is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D D S S S G G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current ID IDM TA=70°C B TA=25°C Power Dissipation Avalanche Current B ±12 V B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. A 7.1 60 2.8 PD TA=70°C Repetitive avalanche energy 0.3mH Units V 8.5 TA=25°C Continuous Drain AF Current Maximum 30 W 1.8 IAR 15 A EAR 34 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 37 70 26 Max 45 100 36 Units °C/W °C/W °C/W AO4404B Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, V DS=5V 40 5 Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A VGS=4.5V, I D=8.5A 22 30 mΩ VGS=2.5V, I D=5A 32 48 mΩ 1 V 4.5 A 1100 pF VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 24 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Rg nA 1.5 30 Forward Transconductance Crss 100 18 gFS Output Capacitance 1 µA 25 TJ=125°C VSD Coss 1 TJ=55°C VGS=10V, I D=8.5A IS Units V 0.002 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ 10 26 S 0.71 900 mΩ VGS=0V, VDS=15V, f=1MHz 88 VGS=0V, VDS=0V, f=1MHz 0.95 1.5 10 12 VGS=4.5V, V DS=15V, I D=8.5A 1.8 nC pF 65 pF Ω nC Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω 3.5 ns 21.5 ns 16.8 20 8 12 2.7 trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev0: Feb 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4404B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 10 4 VGS=2V 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 60 RDS(ON) (mΩ) Normalized On-Resistance 1.7 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 VGS=4.5V 1.5 VGS=10V 1.3 VGS=2.5V 1.1 VGS=2.5V 0.9 0.7 VGS=4.5 0.5 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1.0E+01 90 1.0E+00 80 70 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=8.5A 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) VGS=10V 50 125°C 1.0E-02 1.0E-03 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-04 COMPONENTS IN25°C LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 30 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4404B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=8.5A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 25 30 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 20 1ms 10.0 10ms 0.1s 1.0 1s DC 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=45°C/W 20 0 0.1 0.1 30 10 10s ZθJA Normalized Transient Thermal Resistance 15 50 TJ(Max)=150°C TA=25°C 100µs 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 5 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING TonIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com