DC COMPONENTS CO., LTD. TIP32C DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .295(7.49) .220(5.58) o Absolute Maximum Ratings(TA=25 Characteristic C) .625(15.87) .570(14.48) Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V IC -3 A Collector Current o Total Power Dissipation(TC=25 C) PD 40 W Total Power Dissipation PD 2 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -100 - - V Collector-Emitter Breakdown Voltage BVCEO -100 - - V IC=-30mA, IB=0 ICES - - -200 µA VCE=-100V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IC=-1mA, IE=0 ICEO - - -300 µA VCE=-60V IEBO - - -1 mA VEB=-5V VCE(sat) - - -1.2 V IC=-3A, IB=-375mA VBE(on) - - -1.8 V IC=-3A, VCE=-4V hFE1 25 - - - IC=-1A, VCE=-4V hFE2 10 - 50 - fT 3 - - MHz 380µs, Duty Cycle 2% IC=-3A, VCE=-4V IC=-0.5A, VCE=-10V, f=1MHz