CJD47 CJD50 SURFACE MOUNT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL CJD47 CJD50 UNITS VCBO VCEO 350 500 V 250 400 VEBO IC Continuous Collector Current V 5.0 V 1.0 A Peak Collector Current ICM 2.0 A Continuous Base Current IB PD 600 mA 15 W PD 1.56 W TJ, Tstg ΘJC -65 to +150 °C Thermal Resistance 8.33 °C/W Thermal Resistance ΘJA 80.1 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO 200 µA ICEO VCE=150V (CJD47) VCE=300V (CJD50) 200 µA ICES VCE=350V (CJD47) 100 µA ICES VCE=500V (CJD50) 100 µA IEBO VEB=5.0V IC=30mA (CJD47) 1.0 mA Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature BVCEO BVCEO VCE(SAT) VBE(ON) IC=30mA (CJD50) IC=1.0A, IB=200mA 250 hFE hFE VCE=10V, IC=1.0A VCE=10V, IC=300mA VCE=10V, IC=1.0A 10 fT hfe VCE=10V, VCE=10V, 25 IC=200mA, f=2.0MHz IC=200mA, f=1.0kHz V 400 30 10 V 1.0 V 1.5 V 150 MHz R2 (4-January 2010) CJD47 CJD50 SURFACE MOUNT NPN SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m