SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C IC/IB=1000 1m 75k 10m 100m 1 0 10 1m 100m 10m 1 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 VCE=5V ABSOLUTE MAXIMUM RATINGS. 10 IC/IB=1000 +100°C +25°C -55°C 50k 10m 100m 0 10 1 1m IC - Collector Current (A) 2 100m 10m 1 10 IC - Collector Current (A) hFE v IC VBE(sat) v IC 1 1 0 DC 1s 100ms 10ms 1ms 100µs 0.1 -55°C +25°C +100°C +150°C 1m 10m 100m 1 0.01 10 0.001 10m VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 500 mA Power Dissipation Ptot 500 mW -55 to +150 °C at Tamb=25°C 100m 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area Tj:Tstg PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 300 V IC=10µA, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 100 130 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 14 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 VCE=5V SYMBOL Collector-Base Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -55°C +25°C +100°C +150°C 25k 1m PARAMETER Operating and Storage Temperature Range 1.2 0 B 1 -55°C +25°C +100°C +150°C 0 E C PARTMARKING DETAILS 614 IC/IB=1000 IC/IB=2000 IC/IB=5000 1 FMMT614 ISSUE 3 APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic 100 0.02 MAX. 10 nA VCB=100V, IE=0 µA VCES=100V, IE=0 Collector Cut-Off Current ICES 10 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.9 0.78 1.0 0.9 V V IC=500mA, IB=5mA* IC=100mA, IB=0.1mA Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC=500mA, IB=5mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.8 V IC=500mA, VCE=5V* Static Forward Current Transfer Ratio hFE 15K 5K IC=100mA, VCE=5V* IC=500mA, VCE=5V* Output Capacitance Cobo 6 pF VCB=10V, f=100mHz Switching Times ton 0.7 µs toff 2.5 µs IC=100µA, IB=0.1mA VS=10V *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Typical Characteristics graphs are in preparation. Contact your local Sales office for more information. PAGE NUMBER 3 - 147 SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C IC/IB=1000 1m 75k 10m 100m 1 0 10 1m 100m 10m 1 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 VCE=5V ABSOLUTE MAXIMUM RATINGS. 10 IC/IB=1000 +100°C +25°C -55°C 50k 10m 100m 0 10 1 1m IC - Collector Current (A) 2 100m 10m 1 10 IC - Collector Current (A) hFE v IC VBE(sat) v IC 1 1 0 DC 1s 100ms 10ms 1ms 100µs 0.1 -55°C +25°C +100°C +150°C 1m 10m 100m 1 0.01 10 0.001 10m VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 500 mA Power Dissipation Ptot 500 mW -55 to +150 °C at Tamb=25°C 100m 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area Tj:Tstg PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 300 V IC=10µA, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 100 130 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 14 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 VCE=5V SYMBOL Collector-Base Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -55°C +25°C +100°C +150°C 25k 1m PARAMETER Operating and Storage Temperature Range 1.2 0 B 1 -55°C +25°C +100°C +150°C 0 E C PARTMARKING DETAILS 614 IC/IB=1000 IC/IB=2000 IC/IB=5000 1 FMMT614 ISSUE 3 APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic 100 0.02 MAX. 10 nA VCB=100V, IE=0 µA VCES=100V, IE=0 Collector Cut-Off Current ICES 10 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.9 0.78 1.0 0.9 V V IC=500mA, IB=5mA* IC=100mA, IB=0.1mA Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC=500mA, IB=5mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.8 V IC=500mA, VCE=5V* Static Forward Current Transfer Ratio hFE 15K 5K IC=100mA, VCE=5V* IC=500mA, VCE=5V* Output Capacitance Cobo 6 pF VCB=10V, f=100mHz Switching Times ton 0.7 µs toff 2.5 µs IC=100µA, IB=0.1mA VS=10V *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device Typical Characteristics graphs are in preparation. Contact your local Sales office for more information. PAGE NUMBER 3 - 147