FAIRCHILD FDY302NZ

FDY302NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5V.
• 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V
Applications
• ESD protection diode (note 3)
• Li-Ion Battery Pack
• RoHS Compliant
RDS(ON) = 500 mΩ @ VGS = 2.5 V
1S
G 1
G
3
S
D
2
D
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Parameter
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
– Continuous
– Pulsed
Power Dissipation (Steady State)
PD
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature
Range
Ratings
Unit
s
20
V
V
± 12
600
1000
625
446
–55 to +150
mA
mW
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
200
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
280
°C/W
Package Marking and Ordering Information
Device Marking
E
©2006 Fairchild Semiconductor Corporation
FDY302NZ Rev A
Device
FDY302NZ
Reel Size
7 ’’
Tape width
8 mm
Quantity
3000 units
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FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
July 2006
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
On Characteristics
VGS = 0 V,
ID = 250 µA
20
ID = 250 µA, Referenced to 25°C
V
15
mV/°C
1
± 10
±1
µA
µA
µA
1.0
3
1.5
V
mV/°C
0.24
0.36
0.70
0.35
1.8
0.30
0.50
1.20
1.00
Ω
VDS = 16 V,
VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VGS = ± 4.5 V, VDS = 0 V
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VGS = 4.5 V,
ID = 600 mA
ID = 500 mA
VGS = 2.5 V,
ID = 150 mA
VGS = 1.8 V,
VGS = 4.5 V, ID=600mA, TJ = 125°C
VDS = 5 V,
ID = 600 mA
0.6
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
60
pF
20
pF
10
pF
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 600 mA,
6
12
ns
8
16
ns
8
16
ns
2.4
4.8
ns
0.8
1.1
nC
0.16
nC
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Qrr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 150 mA
IF = 600 mA,
dIF/dt = 100 A/µs
(Note 2)
0.7
1.2
8
1
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
200°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY302NZ Rev A
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FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics
1
2.6
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5V
3.5V
2.5V
0.8
2.0V
0.6
0.4
0.2
2.4
VGS = 2.0V
2.2
2
1.8
1.6
2.5V
1.4
3.0V
1.2
3.5V
4.5V
1
0.8
0
0
0.25
0.5
0.75
0
1
0.2
Figure 1. On-Region Characteristics.
0.8
1
0.9
ID = 600mA
VGS = 4.5V
ID = 300mA
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.8
0.7
0.6
TA = 125oC
0.5
0.4
0.3
TA = 25oC
0.2
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
1.5
ID, DRAIN CURRENT (A)
0.4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
25oC
o
TA = -55 C
1.2
125oC
0.9
0.6
0.3
VGS = 0V
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDY302NZ Rev A
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics
100
ID = 600mA
f = 1MHz
VGS = 0 V
90
4
80
VDS = 5V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
10V
3
15V
2
1
Ciss
70
60
50
40
Coss
30
20
10
0
Crss
0
0
0.2
0.4
0.6
0.8
1
0
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
16
20
30
P(pk), PEAK TRANSIENT POWER (W)
1ms
RDS(ON) LIMIT
1
1s
10ms
100ms
10s
DC
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 280°C/W
TA = 25°C
25
20
15
10
5
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
12
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY302NZ Rev A
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1000
FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics
1.70
1.50
0.50
0.35
0.25
0.50
3
1.70
1.50
0.98
0.78
1
1.80
1.14
2
(0.15)
0.50
0.50
0.66
LAND PATTERN RECOMMENDATION
1.00
0.78
0.58
0.43
0.28
0.20
0.04
SEE DETAIL A
0.54
0.34
DETAIL A
0.10
0.00
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY302NZ Rev A
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FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation
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