FAIRCHILD FDMA291P_08

FDMA291P
tm
Single P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
Features
This device is designed specifically for battery charge
• –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V
or load switching in cellular handset and other ultra-
rDS(ON) = 58 mΩ @ VGS = –2.5V
rDS(ON) = 98 mΩ @ VGS = –1.8V
portable applications. It features a MOSFET with low
• Low profile – 0.8 mm maximum – in the new package
on-state resistance.
MicroFET 2x2 mm
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
RoHS Compliant
linear mode applications.
D
Pin 1
D
G
Bottom Drain Contact
Source
Drain
D
D
D 1
6 D
D 2
5 D
G 3
4 S
S
MicroFET 2x 2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Drain Current
ID
TA=25oC unless otherwise noted
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
Units
±8
V
A
–20
–6.6
V
–24
Power Dissipation for Single Operation
PD
Ratings
(Note 1a)
2.4
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
Thermal Characteristics
–55 to +150
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
Package Marking and Ordering Information
W
°C
°C/W
Device Marking
Device
Reel Size
Tape width
Quantity
291
FDMA291P
7’’
8mm
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA291P Rev B3
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
June 2008
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = –250 µA
VGS = 0 V,
ID = –250 µA, Referenced to 25°C
Min Typ Max Units
–20
V
mV/°C
–12
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
Gate–Body Leakage
VGS = ± 8 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
–0.4
–0.7
–1.0
V
VGS(th)
∆VGS(th)
∆TJ
rDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA
VDS = VGS,
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –6.6 A
VGS = –2.5 V, ID = –5.1 A
VGS = –1.8 V, ID = –3.9 A
VGS= –4.5 V, ID = –6.6 A, TJ=125°C
36
51
79
49
gFS
Forward Transconductance
VDS = –5 V,
ID = –6.6 A
16
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1000
pF
190
pF
100
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
mV/°C
3
42
58
98
64
mΩ
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V,
VGS = –4.5 V
ID = –6.6 A,
13
23
ns
9
18
ns
42
68
ns
25
40
ns
10
14
nC
2
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = –2 A
IF = –6.6 A,
dIF/dt = 100 A/µs
(Note 2)
–0.8
–2
A
–1.2
V
20
ns
8
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
2
(a) RθJA = 52°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDMA291P Rev B3
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
Electrical Characteristics
24
2.6
VGS = -4.5V
-2.5V
20
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-3.0V
16
-4.0V
-3.5V
12
-2.0V
8
-1.8V
4
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
2.2
2
1.8
-2.0V
1.6
-2.5V
1.4
-3.0V
1.2
0
-4.5V
4
8
12
16
-ID, DRAIN CURRENT (A)
20
24
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
ID = -6.6A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.3A
1.4
1.2
1
0.8
0.6
0.12
0.09
o
TA = 125 C
0.06
TA = 25oC
0.03
0
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
0
Figure 3. On-Resistance Variation with
Temperature.
100
10
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
VDS = -10V
20
TA = -55oC
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
24
-ID, DRAIN CURRENT (A)
-4.0V
0.15
1.6
125oC
16
o
25 C
12
-3.5V
1
0.8
5
Figure 1. On-Region Characteristics.
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -1.8V
2.4
8
4
0
10
1
0.1
o
TA = 125 C
0.01
25oC
0.001
-55oC
0.0001
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA291P Rev B3
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
1600
VDS = -5V
ID = -6.6A
f = 1MHz
VGS = 0 V
-15V
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-10V
6
4
1200
2
Ciss
800
Crss
0
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
20
24
0
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
100
100
10
RDS(ON) LIMIT
1
0.1
0.01
10s
DC
100us
1ms
10ms
100ms
1s
VGS = -10V
SINGLE PULSE
RθJA = 145oC/W
o
TA = 25 C
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
20
SINGLE PULSE
RθJA = 145°C/W
TA = 25°C
80
60
40
20
0
0.0001
1000
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
-ID, DRAIN CURRENT (A)
Coss
400
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =145 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA291P Rev B3
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
FDMA291P Single P-Channel 1.8V specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMA291P Rev. B3
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Definition
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Datasheet contains the design specifications for product development. Specifications
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Rev. I35
FDMA291P Rev. B3
6
www.fairchildsemi.com
FDMA291P Single P-Channel 1.8 V Specified PowerTrench® MOSFET
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