FDMA291P tm Single P-Channel 1.8V Specified PowerTrench® MOSFET General Description Features This device is designed specifically for battery charge • –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V or load switching in cellular handset and other ultra- rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V portable applications. It features a MOSFET with low • Low profile – 0.8 mm maximum – in the new package on-state resistance. MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to RoHS Compliant linear mode applications. D Pin 1 D G Bottom Drain Contact Source Drain D D D 1 6 D D 2 5 D G 3 4 S S MicroFET 2x 2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current ID TA=25oC unless otherwise noted – Continuous (Note 1a) – Pulsed TJ, TSTG Units ±8 V A –20 –6.6 V –24 Power Dissipation for Single Operation PD Ratings (Note 1a) 2.4 (Note 1b) 0.9 Operating and Storage Junction Temperature Range Thermal Characteristics –55 to +150 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 145 Package Marking and Ordering Information W °C °C/W Device Marking Device Reel Size Tape width Quantity 291 FDMA291P 7’’ 8mm 3000 units ©2008 Fairchild Semiconductor Corporation FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET June 2008 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C Min Typ Max Units –20 V mV/°C –12 Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA On Characteristics (Note 2) –0.4 –0.7 –1.0 V VGS(th) ∆VGS(th) ∆TJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA VDS = VGS, ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –6.6 A VGS = –2.5 V, ID = –5.1 A VGS = –1.8 V, ID = –3.9 A VGS= –4.5 V, ID = –6.6 A, TJ=125°C 36 51 79 49 gFS Forward Transconductance VDS = –5 V, ID = –6.6 A 16 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1000 pF 190 pF 100 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge mV/°C 3 42 58 98 64 mΩ (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω VDS = –10 V, VGS = –4.5 V ID = –6.6 A, 13 23 ns 9 18 ns 42 68 ns 25 40 ns 10 14 nC 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –2 A IF = –6.6 A, dIF/dt = 100 A/µs (Note 2) –0.8 –2 A –1.2 V 20 ns 8 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. 2 (a) RθJA = 52°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Electrical Characteristics 24 2.6 VGS = -4.5V -2.5V 20 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 16 -4.0V -3.5V 12 -2.0V 8 -1.8V 4 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.2 2 1.8 -2.0V 1.6 -2.5V 1.4 -3.0V 1.2 0 -4.5V 4 8 12 16 -ID, DRAIN CURRENT (A) 20 24 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = -6.6A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) ID = -3.3A 1.4 1.2 1 0.8 0.6 0.12 0.09 o TA = 125 C 0.06 TA = 25oC 0.03 0 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 100 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -10V 20 TA = -55oC 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 24 -ID, DRAIN CURRENT (A) -4.0V 0.15 1.6 125oC 16 o 25 C 12 -3.5V 1 0.8 5 Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -1.8V 2.4 8 4 0 10 1 0.1 o TA = 125 C 0.01 25oC 0.001 -55oC 0.0001 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 1600 VDS = -5V ID = -6.6A f = 1MHz VGS = 0 V -15V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -10V 6 4 1200 2 Ciss 800 Crss 0 0 0 4 8 12 16 Qg, GATE CHARGE (nC) 20 24 0 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) 100 100 10 RDS(ON) LIMIT 1 0.1 0.01 10s DC 100us 1ms 10ms 100ms 1s VGS = -10V SINGLE PULSE RθJA = 145oC/W o TA = 25 C 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 SINGLE PULSE RθJA = 145°C/W TA = 25°C 80 60 40 20 0 0.0001 1000 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 1000 -ID, DRAIN CURRENT (A) Coss 400 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =145 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics FDMA291P Single P-Channel 1.8V specified PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMA291P Rev. 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