FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT Features Applications Industry Standard D2-Pak package Automotive lgnition Coil Driver Circuits o SCIS Energy = 320mJ at TJ = 25 C Coil On Plug Applications Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package E GATE G EMITTER COLLECTOR JEDEC TO-263AB D2-Pak @2008 Fairchild Semiconductor Corporation FGB3236_F085 / FGI3236_F085 Rev. A COLLECTOR (FLANGE) TO262AB FDI SERIES 1 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2008 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 360 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 24 V ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C) 320 mJ 160 mJ ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 44 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 187 W 1.25 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV Package Marking and Ordering Information Device Marking FGB3236 Device FGB3236_F085 Package TO263 Reel Size 330mm Tape Width 24mm Quantity 800 units FGI3236 FGI3236_F085 TO262 Tube NA 50 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 15 TJ = -40 to 150oC 330 363 390 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 350 378 410 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCES = 250V, See Fig. 11 TC = 25oC - - 25 µA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig. 11 TC = 25oC - - 1 - - 40 R1 Series Gate Resistance R2 Gate to Emitter Resistance ICES TC = 150oC TC = 150oC mA - 100 - Ω 10K - 30K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TC = 25oC, See Fig. 3 - 1.14 1.4 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TC = 150oC, See Fig. 4 - 1.32 1.7 V - 1.61 2.05 V 50 - - A VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, ICE(ON) Collector to Emitter On State Current FGB3236_F085 / FGI3236_F085 Rev. A VGE = 5V, VCE = 5V 2 o TC = 150 C www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 20 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V, See Fig.14 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A TC = 25oC TC = 150oC - nC 1.3 1.6 2.2 0.75 1.1 1.8 - 2.6 - V - 0.65 4 µs - 1.7 7 µs - 5.4 15 µs - 1.64 15 µs - - 320 mJ - 0.8 oC/W V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, See Fig.12 Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive TJ = 25oC, See Fig.12 Self Clamped inductive Switching 25oC, TJ = L = 3.0mHy, ICE = 14.7A, RG = 1KΩ, VGE = 5V, See Fig.1&2 Thermal Characteristics RθJC Thermal Resistance Junction to Case FGB3236_F085 / FGI3236_F085 Rev. A All Packages 3 - www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 RG = 1KΩ, VGE = 5V 30 25 20 o TJ = 25 C 15 o TJ = 150 C 10 5 0 SCIS Curves valid for Vclamp Voltages of <410V 0 20 40 60 80 100 120 tCLP, TIME IN CLAMP (µS) 140 160 20 o TJ = 25 C 15 10 o TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <410V 0 2 4 6 L, INDUCTANCE (mHy) 8 10 Figure 2. Self Clamped Inductive Switching Current vs. Inductance ICE = 6A 1.20 ICE = 10A 1.40 VGE = 3.7V VGE = 4.0V VGE = 4.0V 1.35 1.15 VGE = 3.7V 1.30 1.10 VGE = 8V VGE = 5V 1.05 1.25 VGE = 4.5V 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o TJ = -40 C 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current FGB3236_F085 / FGI3236_F085 Rev. A VGE = 4.5V VGE = 8V Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature 0 VGE = 5V 1.20 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) 1.00 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 1.45 1.25 0 RG = 1KΩ, VGE = 5V 30 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 35 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o 0 TJ = 25 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current 4 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o 0 TJ = 175 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 50 40 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 40 30 20 10 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 0 1.0 1.4 1.2 1.0 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Threshold Voltage vs. Junction Temperature SWITCHING TIME (µS) LEAKAGE CURRENT (µA) 1.6 12 VECS = 24V 1000 100 VCES = 300V 10 8 ICE = 6.5A, VGE = 5V, RG = 1KΩ Resistive tOFF Inductive tOFF 6 4 Resistive tON 2 VCES = 250V 0 25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 11. Leakage Current vs. Junction Temperature FGB3236_F085 / FGI3236_F085 Rev. A 4.5 VCE = VGE ICE = 1mA 1.8 10000 -25 1.5 2.0 2.5 3.0 3.5 4.0 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 14 0.1 -50 TJ = -40oC 10 50000 1 TJ = 25oC 0.8 -50 175 Figure 9. DC Collector Current vs. Case Temperature 10 TJ = 175oC 20 Figure 8. Transfer Characteristics VGE = 4.0V 0 25 VCE = 5V 30 Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 12. Switching Time vs. Junction Temperature 5 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves VGS, GATE TO EMITTER VOLTAGE(V) (Continued) CAPACITANCE (pF) 2000 f = 1MHz VGE = 0V 1600 CIES 1200 800 CRES 400 0 COES 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 10 o ICE = 10A, TJ = 25 C 8 VCE = 6V 6 VCE = 12V 4 2 0 0 10 Figure 13. Capacitance vs. Collector to Emitter Voltage 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 14. Gate Charge BVCER, BREAKDOWN VOLTAGE (V) 380 ICER = 10mA 370 o TJ = -40 C o TJ = 25 C 360 o TJ = 175 C 350 10 100 RG, SERIES GATE RESISTANCE (Ω ) 6000 1000 Figure 15. Break down Voltage vs. Series Gate Resistance NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 10 1 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case FGB3236_F085 / FGI3236_F085 Rev. A 6 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Test Circuit and Waveforms FGB3236_F085 / FGI3236_F085 Rev. A 7 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT www.fairchildsemi.com 8 FGB3236_F085 / FGI3236_F085 Rev. A @2008 Fairchild Semiconductor Corporation FGB3236_F085 / FGI3236_F085 Rev. A 9 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2008 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com