FAIRCHILD FGB3236

FGB3236_F085 / FGI3236_F085
EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT
Features
Applications
„ Industry Standard D2-Pak package
„ Automotive lgnition Coil Driver Circuits
o
„ SCIS Energy = 320mJ at TJ = 25 C
„ Coil On Plug Applications
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Package
E
GATE
G
EMITTER
COLLECTOR
JEDEC TO-263AB
D2-Pak
@2008 Fairchild Semiconductor Corporation
FGB3236_F085 / FGI3236_F085 Rev. A
COLLECTOR
(FLANGE)
TO262AB
FDI SERIES
1
www.fairchildsemi.com
FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
October 2008
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
Ratings
360
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
24
V
ESCIS25
Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C)
320
mJ
160
mJ
ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C)
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
44
A
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
27
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
Power Dissipation Total, at TC = 25°C
187
W
1.25
W/oC
PD
Power Dissipation Derating, for TC > 25oC
TJ
Operating Junction Temperature Range
-40 to +175
o
C
TSTG
Storage Junction Temperature Range
-40 to +175
o
C
TL
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
300
o
C
TPKG
Max. Lead Temp. for Soldering (Package Body for 10s)
260
o
C
ESD
Electrostatic Discharge Voltage at100pF, 1500Ω
4
kV
Package Marking and Ordering Information
Device Marking
FGB3236
Device
FGB3236_F085
Package
TO263
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
FGI3236
FGI3236_F085
TO262
Tube
NA
50 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
BVCER
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 15
TJ = -40 to 150oC
330
363
390
V
BVCES
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage RGE = 0,
TJ = -40 to 150oC
350
378
410
V
BVECS
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ±2mA
±12
±14
-
V
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 11
TC = 25oC
-
-
25
µA
-
-
1
mA
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig. 11
TC = 25oC
-
-
1
-
-
40
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
ICES
TC = 150oC
TC = 150oC
mA
-
100
-
Ω
10K
-
30K
Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,
TC = 25oC,
See Fig. 3
-
1.14
1.4
V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
TC = 150oC,
See Fig. 4
-
1.32
1.7
V
-
1.61
2.05
V
50
-
-
A
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
ICE(ON)
Collector to Emitter On State Current
FGB3236_F085 / FGI3236_F085 Rev. A
VGE = 5V, VCE = 5V
2
o
TC = 150 C
www.fairchildsemi.com
FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
-
20
Max Units
Dynamic Characteristics
QG(ON)
Gate Charge
ICE = 10A, VCE = 12V,
VGE = 5V, See Fig.14
VGE(TH)
Gate to Emitter Threshold Voltage
ICE = 1mA, VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
VCE = 12V, ICE = 10A
TC =
25oC
TC = 150oC
-
nC
1.3
1.6
2.2
0.75
1.1
1.8
-
2.6
-
V
-
0.65
4
µs
-
1.7
7
µs
-
5.4
15
µs
-
1.64
15
µs
-
-
320
mJ
-
0.8
oC/W
V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
VGE = 5V, RG = 1KΩ
Current Rise Time-Resistive
TJ = 25oC, See Fig.12
Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
Current Fall Time-Inductive
TJ = 25oC, See Fig.12
Self Clamped inductive Switching
25oC,
TJ =
L = 3.0mHy, ICE = 14.7A,
RG = 1KΩ, VGE = 5V, See Fig.1&2
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
FGB3236_F085 / FGI3236_F085 Rev. A
All Packages
3
-
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FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Electrical Characteristics TA = 25°C unless otherwise noted
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
35
RG = 1KΩ, VGE = 5V
30
25
20
o
TJ = 25 C
15
o
TJ = 150 C
10
5
0
SCIS Curves valid for Vclamp Voltages of <410V
0
20
40
60
80 100 120
tCLP, TIME IN CLAMP (µS)
140
160
20
o
TJ = 25 C
15
10
o
TJ = 150 C
5
0
SCIS Curves valid for Vclamp Voltages of <410V
0
2
4
6
L, INDUCTANCE (mHy)
8
10
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
ICE = 6A
1.20
ICE = 10A
1.40
VGE = 3.7V
VGE = 4.0V
VGE = 4.0V
1.35
1.15
VGE = 3.7V
1.30
1.10
VGE = 8V
VGE = 5V
1.05
1.25
VGE = 4.5V
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
o
TJ = -40 C
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
FGB3236_F085 / FGI3236_F085 Rev. A
VGE = 4.5V
VGE = 8V
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
0
VGE = 5V
1.20
-75 -50 -25 0 25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERTURE ( C)
1.00
-75 -50 -25 0 25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERTURE ( C)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
1.45
1.25
0
RG = 1KΩ, VGE = 5V
30
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
35
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
o
0
TJ = 25 C
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
4
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FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
(Continued)
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
o
0
TJ = 175 C
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
50
40
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
40
30
20
10
50
75
100
125
150
o
TC, CASE TEMPERATURE( C)
0
1.0
1.4
1.2
1.0
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
1.6
12
VECS = 24V
1000
100
VCES = 300V
10
8
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Resistive tOFF
Inductive tOFF
6
4
Resistive tON
2
VCES = 250V
0
25
0
25 50 75 100 125 150 175
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 11. Leakage Current vs. Junction
Temperature
FGB3236_F085 / FGI3236_F085 Rev. A
4.5
VCE = VGE
ICE = 1mA
1.8
10000
-25
1.5
2.0
2.5
3.0
3.5
4.0
VGE, GATE TO EMITTER VOLTAGE (V)
2.0
14
0.1
-50
TJ = -40oC
10
50000
1
TJ = 25oC
0.8
-50
175
Figure 9. DC Collector Current vs. Case
Temperature
10
TJ = 175oC
20
Figure 8. Transfer Characteristics
VGE = 4.0V
0
25
VCE = 5V
30
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
175
Figure 12. Switching Time vs. Junction
Temperature
5
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FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Typical Performance Curves
VGS, GATE TO EMITTER VOLTAGE(V)
(Continued)
CAPACITANCE (pF)
2000
f = 1MHz
VGE = 0V
1600
CIES
1200
800
CRES
400
0
COES
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
10
o
ICE = 10A, TJ = 25 C
8
VCE = 6V
6
VCE = 12V
4
2
0
0
10
Figure 13. Capacitance vs. Collector to Emitter
Voltage
20
30
Qg, GATE CHARGE(nC)
40
50
Figure 14. Gate Charge
BVCER, BREAKDOWN VOLTAGE (V)
380
ICER = 10mA
370
o
TJ = -40 C
o
TJ = 25 C
360
o
TJ = 175 C
350
10
100
RG, SERIES GATE RESISTANCE (Ω )
6000
1000
Figure 15. Break down Voltage vs. Series Gate Resistance
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
10
10
t, RECTANGULAR PULSE DURATION(s)
-1
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
FGB3236_F085 / FGI3236_F085 Rev. A
6
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FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Typical Performance Curves
FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
Test Circuit and Waveforms
FGB3236_F085 / FGI3236_F085 Rev. A
7
www.fairchildsemi.com
FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
www.fairchildsemi.com
8
FGB3236_F085 / FGI3236_F085 Rev. A
@2008 Fairchild Semiconductor Corporation
FGB3236_F085 / FGI3236_F085 Rev. A
9
www.fairchildsemi.com
FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT
October 2008
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Auto-SPM™
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™*
®
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®
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®
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™
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com