SGF23N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • • • • • 12 A, 600 V, TC = 100°C Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A Typical Fall Time. . . . . . . . . .220ns at TJ = 125°C High Speed Switching High Input Impedance C G E TO-3PF G C E Application • General Inverter, PFC ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 1 www.fairchildsemi.com SGF23N60UF — 600 V PT IGBT November 2013 Symbol VCES VGES IC ICM (1) PD TJ Tstg TL SGF23N60UF — 600 V PT IGBT Absolute Maximum Ratings TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C SGF23N60UF 600 20 23 12 92 75 30 -55 to +150 -55 to +150 Unit V V A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Electrical Characteristics of IGBT T C Symbol Typ. --- Max. 1.6 40 Unit C/W C/W = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 uA 600 -- -- V VGE = 0 V, IC = 1 mA -- 0.6 -- V/C VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 720 100 25 ---- pF pF pF --------------- 17 27 60 70 115 135 250 23 32 100 220 205 320 525 --130 150 --400 --200 250 --800 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 12 mA, VCE = VGE IC = 12 A, VGE = 15 V IC = 23 A, VGE = 15 V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 VCC = 300 V, IC = 12 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 25C VCC = 300 V, IC = 12 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 125C 2 www.fairchildsemi.com 50 Common Emitter TC = 25℃ Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 20V 60 12V VGE = 10V 40 40 Collector Current, I C [A] 15V [A] 80 C Collector Current, I SGF23N60UF — 600 V PT IGBT 100 30 20 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 18 4 VCC = 300V Load Current : peak of square wave 15 CE [V] Common Emitter VGE = 15V 24A Load Current [A] Collector - Emitter Voltage, V 3 12A 2 IC = 6A 12 9 6 1 3 Duty cycle : 50% TC = 100℃ Power Dissipation = 16W 0 0 0 30 60 90 120 0.1 150 1 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ [V] 16 CE 16 Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V 1000 Frequency [KHz] Case Temperature, TC [℃] 12 8 24A 4 12A IC = 6A 12 8 24A 4 12A IC = 6A 0 0 0 4 8 12 16 0 20 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 4 Fig 6. Saturation Voltage vs. VGE 3 www.fairchildsemi.com 200 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 1000 100 800 600 Coes 400 200 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ Ton Switching Time [ns] Capacitance [pF] Cies Tr Cres 0 1 10 10 30 1 10 100 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 1000 Eoff Toff Switching Loss [uJ] Switching Time [ns] Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ Tf Toff Eon Eon Eoff 100 Common Emitter VCC = 300V, VGE = ± 15V IC = 12A TC = 25℃ TC = 125℃ 100 Tf 50 30 1 10 100 200 1 10 Gate Resistance, RG [ ] 100 200 Gate Resistance, RG [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 1000 Common Emitter VCC = 300V, VGE = ± 15V RG = 23 T C = 25℃ T C = 125℃ Common Emitter VCC = 300V, VGE = ± 15V RG = 23 TC = 25℃ TC = 125℃ Switching Time [ns] Switching Time [ns] 200 Gate Resistance, RG [ ] Collector - Emitter Voltage, VCE [V] 100 SGF23N60UF — 600 V PT IGBT 1200 Ton Toff Tf Toff 100 Tr Tf 10 50 4 8 12 16 20 24 4 Collector Current, IC [A] 12 16 20 24 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 8 Fig 12. Turn-Off Characteristics vs. Collector Current 4 www.fairchildsemi.com Eoff Eon Common Emitter VCC = 300V, VGE = ± 15V RG = 23 TC = 25℃ TC = 125℃ Eon Eoff Common Emitter RL = 25 TC = 25℃ 12 Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 100 9 300 V 6 3 0 4 8 12 16 20 24 0 10 Collector Current, IC [A] 40 50 200 100 IC MAX. (Pulsed) Collector Current, I C [A] [A] 50us C Collector Current, I 30 Fig 14. Gate Charge Characteristics 300 100us IC MAX. (Continuous) 10 1㎳ DC Operation 0.1 20 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current 1 200 V VCC = 100 V 10 100 SGF23N60UF — 600 V PT IGBT 15 1000 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 10 1 Safe Operating Area VGE = 20V, TC = 100℃ 10 100 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response [Zthjc] 10 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 t1 0.01 t2 Duty factor D = t1 / t2 Peak Tj = Pdm Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 5 www.fairchildsemi.com SGF23N60UF — 600 V PT IGBT Mechanical Dimensions Figure 18. TO3PF,MOLDED,3LD,FULLPACK (AG) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF3PF-003 ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. C1 7 www.fairchildsemi.com SGF23N60UF — 600 V PT IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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