FAIRCHILD FGL60N100BNTDTU

FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
General Description
• High Speed Switching
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder
applications.
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Applications
• UPS, Welder
C
G
TO-264 3L
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
1000
V
VGES
Gate to Emitter Voltage
 25
V
Collector Current
@ TC = 25oC
60
A
Collector Current
@ TC = 100oC
42
A
ICM (1)
Pulsed Collector Current
@ TC = 25oC
120
A
IF
Diode Continuous Forward Current
@ TC = 100oC
15
A
W
IC
PD
o
Maximum Power Dissipation
@ TC = 25 C
180
Maximum Power Dissipation
@ TC = 100oC
72
W
TJ
Operating Junction Temperature
-55 to +150
o
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
Parameter
Ratings
Thermal Resistance, Junction to Case
RJC(Diode)
Thermal Resistance, Junction to Case
RJA
Thermal Resistance, Junction to Ambient
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C1
o
C/W
2.08
o
C/W
25
1
Unit
0.69
oC/W
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
November 2013
Part Number
Top Mark
FGL60N100BNTD
FGL60N100BNTD
Package Packing Method
TO-264
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
1000
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±500
nA
IC = 60 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.0
5.0
7.0
V
IC =10 A, VGE = 15 V
-
1.5
1.8
V
IC = 60 A, VGE = 15 V,
-
2.5
2.9
V
-
6000
-
pF
VCE = 10 V, VGE = 0 V,
f = 1MHz
-
260
-
pF
-
200
-
pF
-
140
-
ns
-
320
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 600 V, IC = 60 A,
RG = 51 , VGE = 15 V,
Inductive Load, TC = 25oC
VCE = 600 V, IC = 60 A,
VGE = 15 V, TC = 25oC
Electrical Characteristics of the Diode
Symbol
VFM
Parameter
Diode Forward Voltage
Test Conditions
IF = 15 A
trr
Diode Reverse Recovery Time
IF = 60 A, di/dt = 20 A/us
IR
Instantaneous
VRRM = 1000 V
FGL60N100BNTD Rev. C1
630
-
ns
130
-
ns
-
275
-
nC
-
45
-
nC
-
95
-
nC
TC = 25°C unless otherwise noted
IF = 60 A
©2000 Fairchild Semiconductor Corporation
-
2
Min.
Typ.
Max
Unit
-
1.2
1.7
V
-
1.8
2.1
V
-
1.2
1.5
us
-
0.05
2.0
uA
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
80
Collector Current, I C [A]
90
20V
15V
10V
9V
Common Emitter
TC = 25℃
8V
70
60
40
7V
20
1
2
3
4
TC = 25℃
60
TC = 125℃
50
40
30
20
10
VGE = 6V
0
0
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
80
Collector Current, I C [A]
100
Figure 2. Typical Saturation Voltage Characteristics
0
5
0
Collector-Emitter Voltage, VCE [V]
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Saturation Voltage vs. VGE
10
Common Emitter
O
T C= - 40 C
3
Collector-Emitter Voltage, VCE[V]
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE=15V
80A
60A
2
30A
IC=10A
1
-50
0
50
100
8
6
IC=10A
0
150
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
10
8
6
30A
60A
80A
2
IC = 10A
0
8
12
16
FGL60N100BNTD Rev. C1
16
20
Common Emitter
TC = 125℃
8
30A
6
60A
80A
4
2
IC = 10A
0
20
4
Gate-Emitter Voltage, VGE [V]
©2000 Fairchild Semiconductor Corporation
12
Figure 6. Saturation Voltage vs. VGE
Common Emitter
TC = 25℃
4
8
Gate-Emitter Voltage, V GE [V]
Figure 5. Saturation Voltage vs. VGE
4
60A
80A
2
Case Temperature, TC [℃]
10
30A
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
3
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Switching Loss vs. Gate Resistance
10000
VCC=600V, IC=60A
10000
VGE=? 5V
Cies
o
Switching Time [ns]
Capacitance [pF]
T C=25 C
1000
Coes
100
Cres
Tdoff
1000
Tr
Tdon
Tf
100
Common Emitter
VGE = 0V, f = 1MHz
T C = 25℃
0
5
10
15
20
25
10
30
0
Collector-Emitter Voltage, VCE [V]
50
Figure 9. Switching Characteristics vs.
Collector Current
20
200
Common Emitter
VCC=600V, RL=10 Ω
TC=25 ℃
Gate-Emitter Voltage,VGE [V]
V CC =600V, Rg=51Ω
V GE =± 15V, TC =25 ℃
Switching Time [ns]
150
Figure 10. Gate Charge Characteristics
1000
Tdoff
Tf
Tr
100
100
Gate Resistance, RG [? ]
Tdon
15
10
5
0
10
20
30
40
50
0
60
50
100
150
200
250
300
Gate Charge, Qg [nC]
Collector Current, I C [A]
Figure 11. SOA Characteristics
Figure 12. Forward Characteristics
100
IC MAX. (Pulsed)
IC MAX. (Continuous)
50us
Forward Current, IF[A]
Collector Current , I C [A]
100
100us
10
1ms
DC Operation
1
Single Nonrepetitive Pulse
T C = 25℃
Curve must be darated
linearly with increase
in temperature
10
100
FGL60N100BNTD Rev. C1
1
0.0
1000
Collector-Emitter Voltage, V CE [V]
©2000 Fairchild Semiconductor Corporation
TC = 25 ℃
0.1
0.1
1
TC = 100 ℃
10
0.5
1.0
1.5
2.0
2.5
Forward Voltage, VFM [V]
4
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics
vs. di/dt
119
IF =60A
85
0.85
t rr
0.68
68
0.51
51
0.34
34
Irr
0.17
17
Reverse Recovery Time, trr [us]
102
1 .0
10
t rr
0 .8
8
I rr
0 .6
6
0 .4
4
0
0.00
0
40
80
120
160
200
240
10
20
di/dt [A/us]
30
40
50
Figure 16. Junction Capacitance
1000
250
100
TC = 150℃
Capacitance, Cj [pF]
1
0.1
T C= 25℃
150
100
50
1E-3
0
T C = 25 ℃
200
10
0.01
60
F o rw a rd C urre nt, IF [A ]
Figure 15. Reverse Current vs. Reverse Voltage
Reverse Current, IR [uA]
12
Reverse Recovery Current Irr [A]
1.02
d i/d t= -2 0 A /u s
T C=25 ?
1 .2
T C =25?
Reverse Recovery Current Irr [A]
Reverse Recovery Time, trr [us]
1.19
Figure 14. Reverse Recovery Characteristics
vs. Forward Current
300
600
0
900
0.1
1
10
100
Reverse Voltage, V R [V]
Reverse Voltage, VR [V]
Figure 17.Transient Thermal Impedance of IGBT
1
Thermal Response, Z
THJC
[℃/W]
1 0
0 .5
0 .2
0 .1
0 .1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
0 .0 1
1 E -3
s in g le
p u ls e
1 0
-4
1 0
-3
1 0
-2
R e c ta n g u la r P u ls e
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C1
t2
5
1 0
-1
D u r a t io n
1 0
0
1 0
1
[s e c ]
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Mechanical Dimensions
Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C1
6
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C1
7
www.fairchildsemi.com
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
F-PFS™
AccuPower™
®
FRFET®
AX-CAP®*
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
CTL™
GTO™
Quiet Series™
TINYOPTO™
Current Transfer Logic™
IntelliMAX™
RapidConfigure™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART
START™
MicroFET™
®
SerDes™
Solutions for Your Success™
MicroPak™
®
®
SPM
MicroPak2™
Fairchild
STEALTH™
MillerDrive™
Fairchild Semiconductor®
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™