PDFDownload

ISL9V5045S3S / ISL9V5045S3
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
General Description
„ SCIS Energy = 500mJ at TJ = 25oC
The ISL9V5045S3S and ISL9V5045S3 are next generation
ignition IGBTs that offer outstanding SCIS capability in the
industry standard D ²-Pak (TO-263) plastic packa ge. This
device is int ended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
„ Logic Level Gate Drive
Applications
„ Automotive Ignition Coil Driver Circuits
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
„ Coil - On Plug Applications
Package
Symbol
COLLECTOR
EMMITER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
GATE
EMITTER
GATE
R2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
ISL9V5045S3S / ISL9V5045S3 Rev. B
R1
JEDEC TO-262AA
1
EMITTER
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
October 2013
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
500
mJ
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
315
mJ
Collector Current Continuous, At TC = 25°C, See Fig 9
51
A
Collector Current Continuous, At TC = 110°C, See Fig 9
43
A
Gate to Emitter Voltage Continuous
±10
V
Power Dissipation Total TC = 25°C
300
W
2
W/°C
°C
BVECS
ESCIS150
IC25
IC110
VGEM
PD
Ratings
480
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
Power Dissipation Derating TC > 25°C
Units
V
Operating Junction Temperature Range
-40 to 175
TSTG
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
4
kV
TJ
TL
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
Package Marking and Ordering Information
Device Marking
V5045S
Device
ISL9V5045S3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800
V5045S
ISL9V5045S3
TO-262AA
Tube
N/A
50
V5045S
ISL9V5045S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
420
450
480
V
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
445
475
505
V
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
IGES = ± 2mA
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Breakdown Voltage
BVECS
Emitter to Collector Breakdown Voltage
BVGES
Gate to Emitter Breakdown Voltage
ICER
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1
R2
Series Gate Resistance
±12
±14
-
V
VCER = 320V, TC = 25°C
RG = 1KΩ, See T = 150°C
C
Fig. 11
-
-
25
µA
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
100
-
Ω
10K
-
30K
Ω
TC = 25°C,
See Fig. 4
-
1.25
1.60
V
TC = 150°C
-
1.47
1.80
V
Gate to Emitter Resistance
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
VCE(SAT)
Collector to Emitter Saturation Voltage
ISL9V5045S3S / ISL9V5045S3 Rev. B
IC = 10A,
VGE = 4.0V
IC = 15A,
VGE = 4.5V
2
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
QG(ON)
Gate Charge
VGE(TH)
Gate to Emitter Threshold Voltage
VGEP
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
TC = 25°C
IC = 1.0mA,
VCE = VGE,
See Fig. 10
Gate to Emitter Plateau Voltage
-
32
-
nC
1.3
-
2.2
V
0.75
-
1.8
V
-
3.0
-
V
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
10.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
500
mJ
TO-263, TO-262
-
-
0.5
°C/W
TC = 150°C
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
Current Turn-On Delay Time-Resistive
td(OFF)L
Current Turn-Off Delay Time-Inductive
trR
tfL
SCIS
Current Rise Time-Resistive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
40
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
Typical Characteristics
35
TJ = 25°C
30
25
20
15
TJ = 150°C
10
5
0
SCIS Curves valid for Vclamp Voltages of <480V
0
25
50
75
100
125
150
175
200
tCLP, TIME IN CLAMP (µS)
30
TJ = 25°C
25
20
15
TJ = 150°C
10
5
0
SCIS Curves valid for Vclamp Voltages of <480V
0
1
2
3
4
5
6
7
8
9
10
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
ISL9V5045S3S / ISL9V5045S3 Rev. A
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
3
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Dynamic Characteristics
1.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.10
ICE = 6A
1.05
VGE = 3.7V
VGE = 4.0V
1.00
0.95
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.90
0.85
-50
-25
0
25
50
75
100
125
150
175
ICE = 10A
1.20
VGE = 3.7V
1.15
1.10
VGE = 4.5V
VGE = 5.0V
1.05
VGE = 8.0V
1.00
-50
-25
0
TJ, JUNCTION TEMPERATURE (°C)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
0
TJ = - 40°C
0
1.0
2.0
3.0
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
0
TJ = 175°C
0
125
150
175
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 25°C
0
1.0
2.0
3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
50
VGE = 8.0V
30
100
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
40
75
VGE = 8.0V
40
0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
50
50
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
VGE = 8.0V
40
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
50
VGE = 4.0V
1.0
2.0
3.0
40
30
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
TJ = 175°C
20
TJ = 25°C
10
0
1.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISL9V5045S3S / ISL9V5045S3 Rev. A
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
TJ = -40°C
1.5
2.5
3.5
2.0
3.0
VGE, GATE TO EMITTER VOLTAGE (V)
4.0
4.5
Figure 8. Transfer Characteristics
4
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
2.0
55
VGE = 4.0V
VCE = VGE
45
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
50
40
35
30
25
20
15
10
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
5
0
25
50
75
100
125
150
0.8
-50
175
TC, CASE TEMPERATURE (°C)
0
25
50
75
100
125
20
VECS = 24V
ICE = 6.5A, VGE = 5V, RG = 1KΩ
18
1000
Resistive tOFF
SWITCHING TIME (µS)
16
100
VCES = 300V
10
VCES = 250V
14
Inductive tOFF
12
10
8
6
1
Resistive tON
4
-25
0
25
50
75
100
125
150
2
25
175
TJ, JUNCTION TEMPERATURE (°C)
8
VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C, CAPACITANCE (pF)
2500
CIES
1500
CRES
500
0
0
COES
5
10
15
20
100
125
150
175
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
30
40
50
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
ISL9V5045S3S / ISL9V5045S3 Rev. A
75
Figure 12. Switching Time vs Junction
Temperature
3000
2000
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
1000
175
Figure 10. Threshold Voltage vs Junction
Temperature
10000
0.1
-50
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
LEAKAGE CURRENT (µA)
-25
Figure 14. Gate Charge
5
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
BVCER, BREAKDOWN VOLTAGE (V)
475
ICER = 10mA
470
TJ = - 40°C
465
460
455
TJ = 25°C
TJ = 175°C
450
445
440
435
430
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
5000
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
10-1
0.1
0.05
0.02
t1
10-2
PD
0.01
t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3 -6
10
10-5
10-4
10-3
10-2
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuits and Waveforms
L
VCE
R
or
L
C
PULSE
GEN
RG
G
LOAD
C
RG = 1KΩ
DUT
G
DUT
VCE
-
5V
E
+
E
Figure 17. Inductive Switching Test Circuit
ISL9V5045S3S / ISL9V5045S3 Rev. A
Figure 18. tON and tOFF Switching Test Circuit
6
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
VCE
BVCES
tP
VCE
L
IAS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
+
RG
-
VGS
VDD
DUT
0V
tP
IAS
0
0.01Ω
tAV
Figure 19. Energy Test Circuit
ISL9V5045S3S / ISL9V5045S3 Rev. A
Figure 20. Energy Waveforms
7
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Test Circuits and Waveforms (Continued)
th
REV 27 May 2005
JUNCTION
ISL9V5045S3S / ISL9V5045S3
CTHERM1 th 6 82e-4
CTHERM2 6 5 105e-4
CTHERM3 5 4 12e-3
CTHERM4 4 3 33e-3
CTHERM5 3 2 55e-3
CTHERM6 2 tl 170e-3
RTHERM1
RTHERM1 th 6 3e-3
RTHERM2 6 5 20e-3
RTHERM3 5 4 50e-3
RTHERM4 4 3 60e-3
RTHERM5 3 2 100e-3
RTHERM6 2 tl 127e-3
RTHERM2
CTHERM1
6
CTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V5045S3S / ISL9V5045S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 82e-4
ctherm.ctherm2 6 5 = 105e-4
ctherm.ctherm3 5 4 = 12e-3
ctherm.ctherm4 4 3 = 33e-3
ctherm.ctherm5 3 2 = 55e-3
ctherm.ctherm6 2 tl = 170e-3
RTHERM3
CTHERM3
4
RTHERM4
rtherm.rtherm1 th 6 = 3e-3
rtherm.rtherm2 6 5 = 20e-3
rtherm.rtherm3 5 4 = 50e-3
rtherm.rtherm4 4 3 = 60e-3
rtherm.rtherm5 3 2 = 100e-3
rtherm.rtherm6 2 tl = 127e-3
}
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
ISL9V5045S3S / ISL9V5045S3 Rev. A
8
CASE
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
SPICE Thermal Model
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
F-PFS
FRFET®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
mWSaver®
OptoHiT
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FAST®
FastvCore
FETBench
FPS
Sync-Lock™
®
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure

Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
®*
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I66
© Fairchild Semiconductor Corporation
www.fairchildsemi.com