GSG GFC260

Gunter Semiconductor GmbH
GFC260
N Channel Power MOSFET with extremely low RDS(ON)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Extremely low RDS(ON)
Mechanical Data:
D31
6.53mm x 9.15mm
Dimension
400 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
25 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
200
V
VGS=0V, ID=250µΑ
Static Drain-to - Source On-resistance
RDS(ON)
0.055
Ω
VGS=10V, ID=28Α
Continuous Drain current ( in target package)
ID@25℃
46
A
VGS=10V
Continuous Drain current ( in target package)
ID@100℃
29
A
VGS=10V
Tj
-55~150
℃
TSTR
-55~150
℃
PD
280
W
Operation Junction
Storage Temperature
Target Device: IRFP260
TO-247AC
@Tc=25℃