Gunter Semiconductor GmbH GFCE50 N Channel highvoltage , Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D29 6.50mm x 7.32mm Dimension 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 800 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 1.2 Ω VGS=10V, ID=4.7Α Continuous Drain current ( in target package) ID@25℃ 5 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 3.2 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ PD 190 W Operation Junction Storage Temperature Target Device: IRFPE50 TO-247AC @Tc=25℃