GSG GFCE50

Gunter Semiconductor GmbH
GFCE50
N Channel highvoltage , Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D29
6.50mm x 7.32mm
Dimension
480 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 10 mil Al
Absolute Maximum Rating
Characteristics
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
800
V
VGS=0V, ID=250µΑ
Static Drain-to - Source On-resistance
RDS(ON)
1.2
Ω
VGS=10V, ID=4.7Α
Continuous Drain current ( in target package)
ID@25℃
5
A
VGS=10V
Continuous Drain current ( in target package)
ID@100℃
3.2
A
VGS=10V
Tj
-55~150
℃
TSTR
-55~150
℃
PD
190
W
Operation Junction
Storage Temperature
Target Device: IRFPE50
TO-247AC
@Tc=25℃