Gunter Semiconductor GmbH GFC9110 P Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D33 1.78mm x 2.41mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 5 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions -V(BR)DSS 100 V − VGS=0V, -ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 1.2 Ω − VGS=10V,- ID=2.4Α Continuous Drain current ( in target package) --ID@25℃ 4 A - VGS=10V Continuous Drain current ( in target package) --ID@100℃ 2.8 A - VGS=10V Tj -55~175 ℃ TSTR -55~175 ℃ PD 43 W Drain-to-Source Breakdown Voltage Operation Junction Temperatre Storage Temperature Target Device: IRF9510 TO-220AB @Tc=25℃