isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD768 APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SB727 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB727 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA, IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A, IB= -6mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -60mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A, IB= -6mA -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -6A, IB= -60mA -3.5 V ICBO Collector Cutoff Current VCB= -120V, IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -10 μA hFE DC Current Gain IC= -3A; VCE= -3V -120 V -7 V B B B B 1000 20000 Switching times ton Turn-On Time 1.0 μs 3.0 μs IC= -3A; IB1= -IB2= -6mA toff Turn-Off Time isc Website：www.iscsemi.cn