isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Base Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD837 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 4 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 2 μA hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 hFE-2 DC Current Gain IC= 3A ; VCE= 3V 1000 60 UNIT V B B B 10000 Switching Times ton Turn-On Time 0.3 μs 4 μs IC= 3A; IB1= -IB2= 12mA toff Turn-Off Time isc Website：www.iscsemi.cn 2