isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 APPLICATIONS ·Designed for low frequency power amplifiers applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VALUE UNIT 60 V 60 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg w w Storage Temperature Range isc Website：www.iscsemi.cn 2SD1601 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1601 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 4mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 3.5 V ICBO Collector Cutoff Current μA ICEO Collector Cutoff Current 10 μA hFE DC Current Gain VECF C-E Diode Forward Voltage m e s isc 100 Switching times Turn-on Time tstg Storage Time TYP. B B B w. VCE= 50V; RBE= ∞ IC= 2A; VCE= 3V n c . i 1000 IC= 2A, IB1= -IB2= 4mA 2 MAX UNIT 20000 IF= 4A Fall Time isc Website：www.iscsemi.cn MIN B VCB= 60V; IE= 0 w w ton tf CONDITIONS 3.0 V 1.0 μs 6.0 μs 1.0 μs