isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(sus)= 100V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage: VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications. SYMBOL ww PARAMETER w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS (Ta=25℃) VALUE UNIT 100 V 100 V Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continunous 2 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -65~+150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD628 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD628 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.5 V VCB= 100V; IE= 0 0.1 mA VCE= 80V; RBE= ∞ 1.0 μA ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain Switching Times ton CONDITIONS TYP. 7 V n c . i m e Turn-on Time UNIT V B IC= 5A, VCE= 3V MAX 100 B s c s i . w w w MIN 1000 20000 2 μs 8 μs IC= 5A, IB1= -IB2= 10mA toff Fall Time isc Website：www.iscsemi.cn