Preliminary Specifications 250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz AM55-0004 SSOP-28 Features ● ● ● ● ● ● Operates Over Full PCN/PCS/PHS Bands Operates Over +3 V to +5 V Supply Voltage +24 dBm P1dB Typical at PA Out 35% PAE @ P1dB for Linear Operation On-Chip T/R Switch, Linear Operation to +30 dBm Low Cost SSOP-28 Plastic Package +.0037 .3900 -.0041 +0,09 9,91 -0,1 +.0025 .0275 -.0025 0,7 +0,06 -0,06 +.0034 .1540 -.0043 .236 ±.008 +0,09 5,99 ±0,2 3,91 -0,11 PIN 1 Description .057 ±.003 1,45 ±0,08 M/A-COM’s AM55-0004 power amplifier/switch integrates a power amplifier and transmit/receive switch in a low cost SSOP package. The power amplifier delivers +24 dBm of linear power with high efficiency and can be operated at supply voltages as low as 2.7 V. It is ideally suited for QPSK or other linearly modulated systems in the 1.8 to 2.0 GHz frequency band. .007 ±.003 0,18 ±0,08 .015 (0,38) X 45° +.004 .010 -.001 0,25 +0,1 -0,03 .025 0,64 .004 (0,10) The power amplifier/switch is fully monolithic and requires only one output capacitor for power match. The T/R switch achieves good insertion loss and isolation without degrading the overall linearity. +.0018 .0080 -.0005 0,2 +0,05 -0,01 0-8° +.022 .028 -.013 +0,56 0,71 -0,33 Dimensions are inches over millimeters. Ordering Information The AM55-0004 is ideally suited for final stage power amplification in linear TDD systems. The integrated switch is convenient for duplexing. The AM55-0004 can also be used as a driver stage for high power systems. Typical applications include Japanese PHS systems or PCN/PCS transmit chains. Part Number AM55-0004 AM55-0004TR AM55-0004RTR AM55-0004SMB M/A-COM’s AM55-0004 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance and reliability. Description SSOP 28-Lead Plastic Package Forward Tape & Reel* Reverse Tape & Reel* Designer’s Kit specific reel size is required, consult factory for part * Ifnumber assignment. Typical Electrical Specifications Test conditions: Frequency: 1.9 GHz, VDD1 = VDD2 = 4.8 V ±10%, VG1 adjusted for 30 mA quiescent bias on VDD1, VG2 adjusted for 65 mA quiescent bias on VDD2, TA = +25°C Parameter Power Amplifier Linear Gain Power Output @ P1dB at PA OUT port Current From Positive Supply @ P1dB Input VSWR T/R Switch Insertion Loss Input Match Isolation Units Min. Typ. dB dBm mA 22 22.5 75 24 24 175 2.0:1 dB dB 0.6 1.5:1 20 15 Specifications Subject to Change Without Notice M/A-COM Inc. ■ Max. 275 1.0 V2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 1 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch Absolute Maximum Ratings1 Parameter Max. Input Power2 Operating Voltages2 Operating Temperature Storage Temperature AM55-0004 Truth Table Operating Mode Absolute Maximum +23 dBm VDD = 7 V VGG = -5 V VDD - VGG = 8 V -40°C to +85°C -65°C to +150°C VSW VSW SAVE Tx PA Tx X X 0V PA Sleep X X -4.0 Volts T/R Switch Tx 0 Volts -4.0 Volts X T/R Switch Rx -4.0 Volts 0 Volts X X - Don’t Care 1. Exceeding these limits may cause permanent damage. 2. Ambient temperature (TA) = +25°C Pin Configuration Pin No. 1 Pin Name GND 2 VSW 3 4 5 6 7 GND Tx IN GND GND ANT IN/OUT 8 9 10 11 12 GND Rx OUT GND GND VDD1 13 SAVE Tx 14 15 16 17 18 GND GND PA IN GND VG1 19 20 GND VG2 21 22 23 24 25 26 GND GND GND GND PA OUT VDD2 27 VSW 28 GND Functional Diagram and Pin Configuration Description DC and RF Ground 1 Complimentary T/R Switch Control, -4 V Tx mode/0 V Rx mode DC and RF Ground Transmit side of T/R switch DC and RF Ground DC and RF Ground Common port of T/R switch which is connected to the antenna DC and RF Ground Receive side of T/R switch DC and RF Ground DC and RF Ground Positive bias for the first stage of PA, +2.7 to +6.0 volts Sleep mode control of first stage of PA ONLY 0 V — first PA stage on -4 V — first PA stage off DC and RF Ground DC and RF Ground RF input of the Power Amplifier DC and RF Ground Negative bias control for the first PA stage, voltage divider is on the MMIC, adjusted to set VDD1 quiescent bias current, which is typically 30 mA. Input impedance: 10 k Ω DC and RF Ground Negative bias control for the second PA stage, adjusted to set VDD2 quiescent bias current, which is typically 65 mA. Input impedance: > 1MΩ Second Stage DC and RF Ground Second Stage DC and RF Ground Second Stage DC and RF Ground Second Stage DC and RF Ground RF output of the Power Amplifier Positive bias for the second stage of the PA, +2.7 to +6.0 volts T/R Switch Control, 0 V Tx mode/-4 V Rx mode DC and RF Ground 28 GND GND VSW VSW VDD1 DD2 GND Tx IN PA OUT GND GND GND GND ANT IN/OUT GND GND Rx OUT GND VG1 G2 GND GND VG1 G2 GND VDD1 GND PA IN SAVE Tx GND GND 14 15 Specifications Subject to Change Without Notice M/A-COM Inc. ■ V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 2 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch Power Amplifier Small Signal Performance1 AM55-0004 Power Amplifier CW Performance at 1.9 GHz1 GAIN POWER OUTPUT 27 28 6.0 V 6.0 V POWER (dBm) GAIN (dB) 24 26 4.8 V 21 3.6 V 18 4.8 V 24 22 3.6 V 20 3.0 V 3.0 V 18 15 1.50 1.75 2.00 2.25 2.50 -5 -3 FREQUENCY (GHz) INPUT MATCH 3 POWER ADDED EFFICIENCY (%) 45 3.0 V -5 4.8 V 6.0 V 35 PAE (%) RETURN LOSS (dB) 1 PIN (dBm) 0 -10 -15 3.0 V 3.6 V 25 4.8 V 6.0 V 15 3.6 V -20 -25 5 1.50 1.75 2.00 FREQUENCY (GHz) 2.25 2.50 -5 OUTPUT MATCH -3 -1 PIN (dBm) 1 3 GAIN COMPRESSION 0 0 6.0 V COMPRESSION (dB) RETURN LOSS (dB) -1 -5 4.8 V -10 3.0 V -15 3.6 V -20 -25 -1 -2 6.0 V 4.8 V -3 3.0 V -4 3.6 V -5 1.50 1.75 2.00 2.25 2.50 -5 -3 -1 FREQUENCY (GHz) 1 3 PIN (dBm) 1. All data measured at TA = +25°C and VG1, VG2 adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively. Specifications Subject to Change Without Notice M/A-COM Inc. ■ V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 3 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch AM55-0004 Power Amplifier Temperature Performance1 Power Amplifier Spurious Response at Various Supply Voltages1 THIRD ORDER INTERMODULATION RATIO @ 1.9 GHz (TONE SPACING 600 KHz) LINEAR GAIN, VDD1 = VDD2 = 4.8 V 30 27 6.0 V -15°C 25 IMR (dBc) GAIN (dB) 24 +25°C 21 +70°C 18 4.8 V 20 3.0 V 15 3.6 V 15 1.50 1.75 2.00 2.25 10 2.50 15 FREQUENCY (GHz) 17 19 21 23 FUNDAMENTAL POUT/TONE (dBm) 2ND HARMONIC RATIO @ 1.9 GHz POWER OUTPUT @ 1.9 GHz, VDD1 = VDD2 = 4.8 V 60 28 4.8 V 50 -15°C 24 dBc POWER (dBm) +25°C 26 22 4.0 V 40 3.0 V 30 +70°C 20 18 -5 -3 -1 1 20 3 10 13 PIN (dBm) 40 19 22 25 3RD HARMONIC RATIO @ 1.9 GHz 80 -15°C 4.0 V 70 dBc +25°C 25 20 4.8 V 75 30 65 60 +70°C 3.0 V 15 10 16 FUNDAMENTAL POUT (dBm) POWER ADDED EFFICIENCY (%) @ 1.9 GHz, VDD1 = VDD2 = 4.8 V 35 PAE (%) 25 55 -5 -3 -1 1 50 3 10 PIN (dBm) 13 16 19 22 25 FUNDAMENTAL POUT (dBm) 1. All data measured at TA = +25°C and VG1, VG2 adjusted for first stage quiescent current of 30 mA and second stage current of 65 mA, respectively. Specifications Subject to Change Without Notice M/A-COM Inc. ■ V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 4 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch AM55-0004 Transmit/Receive Switch Performance Power Amplifier Spectral Response Under Modulation Drive (π/4 DQPSK, a = 0.5, 384 kB/sec, 9-bit PN code) INSERTION LOSS 0.0 -15°C -20 -40 -60 -1.0 +70°C -1.5 -2.0 -80 1899.0 1899.4 1899.8 1900.2 1900.6 1.50 1901.0 1.75 FREQUENCY (MHz) SPECTRAL RESPONSE UNDER MODULATION1 (VD = 4.8 V, POUT = 23.4 dBm) 2.00 2.25 FREQUENCY (GHz) 2.50 ISOLATION (@ -15°C, +25°C and +70°C) 0 -20 -10 ISOLATION (dB) POWER SPECTRAL DENSITY (dBc) +25°C -0.5 LOSS (dB) POWER SPECTRAL DENSITY (dBc) 0 SPECTRAL RESPONSE UNDER MODULATION1 (VD = 3.0 V, POUT = 20.5 dBm) -20 -30 -40 -50 -25 -30 -35 -60 -70 -40 1899.0 1899.4 1899.8 1900.2 1900.6 1.50 1901.0 1.75 FREQUENCY (MHz) 2.00 2.25 FREQUENCY (GHz) 2.50 RETURN LOSS (dB) RETURN LOSS (@ -15°C, +25°C and +70°C) Output Power Under Modulation2 POUT (dBm) 20.5 21.4 22.2 23.4 23.7 -5 In -10 -15 Out -20 -25 -30 -35 1.5 1.6 1.7 1.8 1.9 1. Spectral output is tested under the following conditions: Modulation scheme is π/4 DQPSK with a bit transfer rate of 384 kB/sec and a root Nyquist filter with a = 0.5 per RCR STD-28. The spectrum analyzer settings are as follows: POWER OUT (dBm) 2. This chart documents the modulated output power delivered for a fixed adjacent channel interference (ACI) rejection of 55 dBc at a 600-kHz offset. 2.2 2.3 2.4 2.5 33 2.5 31 1.5 29 0.5 27 -0.5 25 -1.5 23 25 26 27 28 29 30 31 32 POWER IN (dBm) Specifications Subject to Change Without Notice ■ 2.1 LINEARITY (Tx MODE) Resolution bandwidth: 10 kHz Video bandwidth: 100 kHz Sweep time: 5 seconds M/A-COM Inc. 2.0 FREQUENCY (GHz) 33 -2.5 34 COMPRESSION (dB) VD (volts) 3 3.6 4 4.8 6 0 V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 5 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch AM55-0004 Recommended PCB Configuration Layout View Cross-Section View 0.700 in. RF Traces + Components C1 Pin 1 C6 RF Ground DC Routing C9 Customer Defined C10 R3 C2 R2 0.490 in. R1 The PCB dielectric between RF traces and RF ground layers should be chosen to reduce RF discontinuities between 50-Ω lines and package pins. M/A-COM recommends an FR-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a 50-Ω line width of 0.015 in. (0.38 mm). The recommended metalization thickness is 1 oz. copper. C5 C3 C8 C7 C4 Shaded traces are vias to DC routing layer and traces on DC routing layer. Biasing Procedure External Circuitry Parts List Label C1 - C5 C6 - C8 C9 C10 R1 R2 R3 Tline Value 1000 pF 68 pF 1.5 pF 15 pF 2.7 k Ω 1.5 k Ω 150 Ω 0.250 in. long The AM55-0004 requires that VGG bias be applied prior to any VDD bias. Permanent damage may occur if this procedure is not followed. All FETs in the PA will draw excessive current and damage internal circuitry. Purpose Low frequency bypass RF bypass Output power tuning Reduces low frequency gain Voltage divider to VG2 Voltage divider to VG2 Reduces low frequency gain Power match All off-chip components are low-cost surface mount components obtainable from multiple sources. (0.020 in. x 0.040 in. or 0.030 in. x 0.050 in.) External Circuitry VSW VSW Tx IN ANT IN/OUT Rx OUT VDD1 C8 C5 Save Tx 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 VDD2 C1 PA OUT TLine C9 C10 R1 R3 C3 R2 C7 VG1 PA IN Specifications Subject to Change Without Notice ■ VG2 C2 C4 M/A-COM Inc. C6 V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 6 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch AM55-0004 Designer’s Kit (AM55-0004SMB) The AM55-0004SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM55-0004 integrated Power Amplifier and T/R Switch. The evaluation board consists of an AM55-0004, recommended external surface mount circuitry, RF connectors and a DC multipin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the Designer's Kit: a floppy disk (with typical performance data and a .DXF file of the recommended PCB layout) and any additional Application Notes. The AM55-0004SMB PA/Switch evaluation PCB and block diagram are illustrated below with all functional ports labeled. P/A Switch Sample Board Functional Block Diagram VG1 VDD1 VDD2 PA OUT Tx IN TX IN SAVE T VSW VG2 VSW ANT IN/OUT PA OUT ANT IN/OUT RX OUT PA IN Rx OUT PA IN DC Connector Pinout PCB DC Connector Function Device Pin Number PCB DC Connector Function Device Pin Number 1 N/C N/C 11 VSW 27 2 VDD1 (+ 4.8 V) 12 12 VG1 18 3 SAVE Tx (0 V/-4 V) 13 13 VSW 27 4 GND N/C 14 GND N/C 5 SAVE Tx (0 V/-4 V) 13 15 VG2 20 6 VG1 18 16 VG1 18 7 VSW 2 17 N/C N/C 8 GND N/C 18 VG2 20 9 VSW 2 19 N/C N/C 10 VG1 18 20 VDD2 ( + 4.8 V) 26 Specifications Subject to Change Without Notice M/A-COM Inc. ■ V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 7 ■ Telephone: 800-366-2266 250 mW Linear Power Amplifier and T/R Switch AM55-0004 AM55-0004SMB Biasing Procedure In order to prevent transients which may damage the MMIC, please adhere to the following procedure. • Turn on all power supplies and set all voltages to 0 volts BEFORE connecting the power supplies to the DC connector. • Apply -4.0 volt supply or GND to DC connector pin 9 (VSW, see truth table for desired mode). • Apply -4.0 volt supply or GND to DC connector pin 13 (VSW, see truth table for desired mode). • Apply a -4.0 volt supply to the DC connector pin 16 (VG1). • Apply a -4.0 volt supply to the DC connector pin 18 (VG2). • Apply a +4.8 volt supply to the DC connector pin 2 (VDD1). • Apply a +4.8 volt supply to the DC connector pin 20 (VDD2). • Apply GND to DC connector pin 5 (Save Tx). • Adjust VG1 supply for desired VDD1 quiescent current (typically 30 mA). • Adjust VG2 supply for desired VDD2 quiescent current (typically 65 mA). • Change voltage on DC connector pin 5 as required (Save Tx, see truth table for desired mode). • Apply RF power and test. • To power off, reverse above procedure 1. Set VG1 & VG2 to -4 V. 2. 3. 4. 5. Set VDD1 & VDD2 to 0 V. Set control voltage supplies to 0 V. Disconnect bias lines from DC connector. Turn off power supplies. Evaluation PCB and RF Connector Losses Port Reference PA IN PA OUT Tx IN ANT IN/OUT Rx OUT Estimated Loss (dB) 0.15 0.20 0.20 0.20 0.20 The DC connector on the Designer’s Kit PCB allows selection of all the device’s operating modes. It is accomplished by one or more of the following methods: 1. A mating female multi-pin connector (Newark Electronics Stock # 46F-4658, not included) 2. Wires soldered to the necessary pins (not included) 3. Clip leads (not included) 4. A combination of clip leads or wires and jumpers (jumpers included as required) Specifications Subject to Change Without Notice M/A-COM Inc. ■ V 2.00 1011 Pawtucket Boulevard, Lowell, MA 01853 USA 8 ■ Telephone: 800-366-2266