FAIRCHILD FCH47N60_13

FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 m
Features
Description
• 650 V atTJ = 150°C
The FCH47N60 SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high-voltage super-junction (SJ) MOSFET
family that utilizes charge-balance technology for outstanding
low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and avalanche energy.
This SuperFET MOSFET is suitable for the switching power
applications such as PFC, server/telecom power, FPD TV power,
ATX power, and industrial power.
• Typ. RDS(on) = 58 m
• Ultra-Low Gate Charge (Typ. Qg = 210 nC)
• Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
ID
Drain Current
IDM
Drain Current
VGSS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
FCH47N60_F133
600
Continuous (TC = 25°C)
47
Continuous (TC = 100°C)
29.7
Pulsed
A
141
A
±30
V
(Note 2)
1800
mJ
(Note 1)
47
A
(Note 1)
41.7
mJ
4.5
V/ns
(Note 1)
(Note 3)
(TC = 25°C)
417
W
Derate above 25°C
3.33
W/°C
-55 to +150
°C
300
°C
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
Unit
V
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RJC
Thermal Resistance, Junction to Case, Maximum
RJA
Thermal Resistance, Case-to-Sink
RJA
Thermal Resistance, Junction to Ambient, Maximum
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
Max.
Unit
0.3
°C/W
41.7
°C/W
0.24
1
°C/W
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
May 2013
Device Marking
FCH47N60
Device
FCH47N60_F133
Package
TO-247
Reel Size
Tape Width
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS
TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-to-Body Leakage Current
VGS = 0 V, ID = 250 μA, TC = 25°C
600
V
VGS = 0 V, ID = 250 μA, TC = 150°C
650
V
ID = 250 μA, Referenced to 25°C
0.6
V/°C
VGS = 0 V, ID = 47 A
700
V
VDS = 600 V, VGS = 0 V
1
VDS = 480 V, TC = 125°C
10
VGS = ±30 V, VDS = 0 V
±100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 A
Static Drain-to-Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 23.5 A
VDS = 40 V, ID = 23.5 A
3.0
0.058
(Note 4)
5.0
V
0.070

40
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
5900
8000
pF
3200
4200
pF
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
250
160
pF
pF
Cosseff.
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
420
pF
Switching Characteristics
td(on)
Turn-On Delay
tr
Turn-On Rise Time
td(off)
Turn-Off Delay
tf
Turn-Off Fall Time
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 300 V, ID = 47 A
RG = 25 
(Note 4, 5)
VDS = 480 V, ID = 47 A,
VGS = 10 V
(Note 4, 5)
185
430
210
450
ns
ns
520
1100
ns
75
160
ns
210
270
nC
38
nC
110
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-to-Source Diode Forward Current
47
A
ISM
Maximum Pulsed Drain-to-Source Diode Forward Current
141
A
VSD
Drain-to-Source Diode Forward Voltage
VGS = 0 V, ISD = 47 A
1.4
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
VGS = 0 V, ISD = 47 A
dIF/dt = 100 A/s
(Note 4)
V
590
ns
25
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 18 A, VDD = 50 V, RG = 25 , Starting TJ = 25C.
3. ISD  47 A, di/dt  200 A/s, VDD  BVDSS, Starting TJ = 25C.
4. Pulse Test: Pulse width  300 s, Duty Cycle  2%.
5. Essentially Independent of Operating Temperature Typical Characteristics.
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
2
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
Package Marking and Ordering Information
FCH47N60 — N-Channel MOSFET
Typical Performance Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
10
2
ID , Drain Current [A]
2
1
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
0
10
-1
0
10
10
150℃
1
10
-55℃
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
0
10
2
1
10
25℃
10
4
8
10
Figure 2. Transfer Characteristics
0.20
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
Figure 1. On-Region Characteristics
0.15
VGS = 10V
0.10
VGS = 20V
0.05
0
20
40
60
80
100
120
140
160
180
2
10
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0
200
0.2
0.4
0.6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
1.2
1.4
1.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
VDS = 100V
VGS, Gate-Source Voltage [V]
25000
Coss
15000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
10000
0
-1
10
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
5000
25℃
10
※ Note : TJ = 25℃
0.00
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Crss
0
10
1
10
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 47A
0
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
10
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
Typical Performance Characteristics (Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 47 A
0.5
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
50
Operation in This Area
is Limited by R DS(on)
2
100 us
40
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
1
10
DC
0
10
※ Notes :
o
1. TC = 25 C
-1
10
0
10
20
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
30
1
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
Figure 9. Safe Operating Area
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .2
0 .1
0 .0 5
PDM
0 .0 2
10
-2
10
0 .0 1
-5
t1
s in g le p u ls e
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
4
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
5
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
6
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
Physical Dimensions
Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
7
www.fairchildsemi.com
tm
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
8
www.fairchildsemi.com
FCH47N60 — N-Channel MOSFET
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