FAIRCHILD FDI045N10A

FDP045N10A_F102 / FDI045N10A_F102
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.5 mΩ
Features
Description
• RDS(on) = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 54 nC(Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
Applications
• High Power and Current Handling Capability
• Synchronous Rectification for ATX / Server / Telecom PSU
• RoHS Compliant
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
G
D
S
TO-220
G
G
D
S
2
I -PAK
(TO-262)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
VDSS
Drain to Source Voltage
FDP045N10A_F102
FDI045N10A_F102
100
VGSS
Gate to Source Voltage
±20
Symbol
Parameter
- Continuous (TC = 25oC, Silicon Limited)
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
V
V
164*
- Continuous (TC = 100oC, Silicon LImited)
116
- Continuous (TC = 25oC, Package Limited)
120
- Pulsed
(Note 1)
656
A
(Note 2)
637
mJ
6.0
V/ns
(Note 3)
A
(TC = 25oC)
263
W
- Derate above 25oC
1.75
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
Unit
-55 to +175
o
C
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
FDP045N10A_F102
FDI045N10A_F102
Parameter
RθJC
Thermal Resistance, Junction to Case, Max.
0.57
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
1
Unit
o
C/W
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
March 2013
Device Marking
FDP045N10A
Device
FDP045N10A_F102
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDI045N10A
FDI045N10A_F102
I2PAK
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
-
-
V
-
0.07
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 80V, VGS = 0V
-
-
1
VDS = 80V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.0
-
4.0
V
-
3.8
4.5
mΩ
-
132
-
S
-
3960
5270
pF
-
925
1230
pF
pF
ID = 250μA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 100A
VDS = 10V, ID = 100A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
34
-
Coss(er)
Engry Releted Output Capacitance
VDS = 50V, VGS = 0V
-
1520
-
pF
Qg(tot)
Total Gate Charge at 10V
-
54
74
nC
Qgs
Gate to Source Gate Charge
VGS = 10V, VDS = 50V
ID = 100A
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDS = 50V, VGS = 0V
f = 1MHz
(Note 4)
-
17
-
nC
-
8
-
nC
-
13
-
nC
-
23
56
ns
-
26
62
ns
-
50
110
ns
-
15
40
ns
-
1.9
-
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
ESR
Equivalent Series Resistance (G-S)
VDD = 50V, ID = 100A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
f = 1MHz
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
164*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
656
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 100A
-
-
1.3
V
trr
Reverse Recovery Time
-
75
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, VDD = 50V, ISD = 100A
dIF/dt = 100A/μs
-
120
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
2
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
500
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
100
ID, Drain Current[A]
ID, Drain Current[A]
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
o
o
175 C
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
10
0.1
1
1
VDS, Drain-Source Voltage[V]
2
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
IS, Reverse Drain Current [A]
4.5
RDS(ON) [mΩ],
Drain-Source On-Resistance
2
3
4
5
VGS, Gate-Source Voltage[V]
VGS = 10V
4.0
VGS = 20V
3.5
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
3.0
0
100
200
300
ID, Drain Current [A]
1
0.0
400
Figure 5. Capacitance Characteristics
2. 250μs Pulse Test
0.3
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10000
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
100
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
VDS = 20V
VDS = 50V
VDS = 80V
8
6
4
2
*Note: ID = 100A
0
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
100
0
3
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
*Notes:
1. VGS = 10V
2. ID = 100A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
100
10
VGS = 10V
30μs
150
100μs
125
ID, Drain Current [A]
ID, Drain Current [A]
0.5
175
1ms
Operation in This Area
is Limited by R DS(on)
10ms
*Notes:
o
DC
1. TC = 25 C
2. TJ = 175 C
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
100
75
50
25
o
o
RθJC = 0.57 C/W
0
25
100 200
Figure 11. Eoss vs. Drain to Sourece Voltage
IAS, Avalanche Current [A]
50
4
3
2
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 12. Unclamped Inductive
Switching Capability
5
EOSS, [μJ]
1.0
Figure 10. Maximum Drain Current
1000
0.1
0.1
1.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
1
2.0
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
o
STARTING TJ = 25 C
10
o
STARTING TJ = 150 C
1
0
0
25
50
75
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
1
0.01
100
4
0.1
1
10
100
tAV, Time In Avalanche [ms]
1000
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
*Notes:
o
1. ZθJC(t) = 0.57 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
5
-1
10
1
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
6
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
7
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
8
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
Package Dimensions
I2PAK
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. C0
10
www.fairchildsemi.com
FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET
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