FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS(on) = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 54 nC(Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D G D S TO-220 G G D S 2 I -PAK (TO-262) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted VDSS Drain to Source Voltage FDP045N10A_F102 FDI045N10A_F102 100 VGSS Gate to Source Voltage ±20 Symbol Parameter - Continuous (TC = 25oC, Silicon Limited) ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt V V 164* - Continuous (TC = 100oC, Silicon LImited) 116 - Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 656 A (Note 2) 637 mJ 6.0 V/ns (Note 3) A (TC = 25oC) 263 W - Derate above 25oC 1.75 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Unit -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol FDP045N10A_F102 FDI045N10A_F102 Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.57 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 1 Unit o C/W www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET March 2013 Device Marking FDP045N10A Device FDP045N10A_F102 Package TO-220 Reel Size - Tape Width - Quantity 50 FDI045N10A FDI045N10A_F102 I2PAK - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.07 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 3.8 4.5 mΩ - 132 - S - 3960 5270 pF - 925 1230 pF pF ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 100A VDS = 10V, ID = 100A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 34 - Coss(er) Engry Releted Output Capacitance VDS = 50V, VGS = 0V - 1520 - pF Qg(tot) Total Gate Charge at 10V - 54 74 nC Qgs Gate to Source Gate Charge VGS = 10V, VDS = 50V ID = 100A Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 50V, VGS = 0V f = 1MHz (Note 4) - 17 - nC - 8 - nC - 13 - nC - 23 56 ns - 26 62 ns - 50 110 ns - 15 40 ns - 1.9 - Ω Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4) f = 1MHz Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 164* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.3 V trr Reverse Recovery Time - 75 - ns Qrr Reverse Recovery Charge VGS = 0V, VDD = 50V, ISD = 100A dIF/dt = 100A/μs - 120 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 2 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 1 1 VDS, Drain-Source Voltage[V] 2 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 IS, Reverse Drain Current [A] 4.5 RDS(ON) [mΩ], Drain-Source On-Resistance 2 3 4 5 VGS, Gate-Source Voltage[V] VGS = 10V 4.0 VGS = 20V 3.5 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 3.0 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10000 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 100 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 100A 0 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 100 0 3 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 *Notes: 1. VGS = 10V 2. ID = 100A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 100 10 VGS = 10V 30μs 150 100μs 125 ID, Drain Current [A] ID, Drain Current [A] 0.5 175 1ms Operation in This Area is Limited by R DS(on) 10ms *Notes: o DC 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 100 75 50 25 o o RθJC = 0.57 C/W 0 25 100 200 Figure 11. Eoss vs. Drain to Sourece Voltage IAS, Avalanche Current [A] 50 4 3 2 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 5 EOSS, [μJ] 1.0 Figure 10. Maximum Drain Current 1000 0.1 0.1 1.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature 1 2.0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0 0 25 50 75 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 1 0.01 100 4 0.1 1 10 100 tAV, Time In Avalanche [ms] 1000 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 t2 0.01 *Notes: o 1. ZθJC(t) = 0.57 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 6 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 7 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 8 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET Package Dimensions I2PAK ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDP045N10A_F102 / FDI045N10A_F102 Rev. C0 10 www.fairchildsemi.com FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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