N-Channel PowerTrench® SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. RoHS Compliant Applications Dual CoolTM PQFN package Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 38 A Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 36 A High performance technology for extremely low rDS(on) Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side S S S G Pin 1 D Top D D D Power 56 D 5 4 G D 6 3 D 7 2 S D 8 1 S S Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C TJ, TSTG 12 V (Note 1a) 38 A 140 Single Pulse Avalanche Energy PD Units V 90 -Pulsed EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 145 89 (Note 1a) Operating and Storage Junction Temperature Range 3.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 2.8 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.4 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 °C/W Package Marking and Ordering Information Device Marking 09DC Device FDMS8558SDC ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C Package Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM June 2012 FDMS8558SDC Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V ±100 nA 2.2 V 24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.1 1.4 -3 mV/°C VGS = 10 V, ID = 38 A 1.1 1.5 VGS = 4.5 V, ID = 36 A 1.3 1.7 VGS = 10 V, ID = 38 A, TJ = 125 °C 1.6 2.1 VDS = 5 V, ID = 38 A 317 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 5118 pF 1508 pF 195 pF 0.9 Ω 14 ns 8 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 38 A, VGS = 10 V, RGEN = 6 Ω 51 ns 7 ns VGS = 0 V to 10 V 81 nC VGS = 0 V to 4.5 V VDD = 13 V, ID = 38 A 38 nC 10 nC 9.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 38 A (Note 2) 0.8 1.2 IF = 38 A, di/dt = 300 A/μs 2 V 35 ns 49 nC www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 2.8 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.4 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 81 °C/W when mounted on a minimum pad of 2 oz copper a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A. ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 3 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Thermal Characteristics 140 6 VGS = 4.5 V 120 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 3.5 V VGS = 3 V 100 VGS = 2.5 V 80 60 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 0 0 0.2 0.4 0.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 VGS = 2.5 V 4 3 2 1 VGS = 10 V 0 0.8 0 20 40 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 100 125 150 ID = 38 A 3 TJ = 125 oC 2 1 TJ = 25 oC 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 TJ = 25 oC TJ = 125 oC 40 TJ = -55 oC 20 0 1.2 1.5 1.8 2.1 2.4 4 5 6 7 8 9 200 100 VGS = 0 V TJ = 25 oC 1 0.1 0.01 0.0 2.7 TJ = 125 oC 10 TJ = -55 oC 0.2 0.4 0.6 0.8 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V 60 3 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 100 140 4 0 Figure 3. Normalized On Resistance vs Junction Temperature 120 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 TJ, JUNCTION TEMPERATURE (oC) 140 100 6 ID = 38 A VGS = 10 V -50 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.5 VGS = 3 V VGS = 3.5 V VGS = 4.5 V 4 1.0 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 38 A 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 13 V 4 VDD = 15 V Coss 1000 2 0 f = 1 MHz VGS = 0 V 0 15 30 45 60 75 90 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 200 100 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = TJ 1 0.001 0.01 100 oC 150 VGS = 4.5 V 100 Limited by Package 50 o RθJC = 1.4 C/W = 125 oC 0.1 1 10 100 0 25 1000 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10000 100 P(PK), PEAK TRANSIENT POWER (W) 1000 100 us 10 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 100 0.1 1 ms 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 81 oC/W DC TA = 25 oC 0.1 1 10 100 TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C SINGLE PULSE RθJA = 81 oC/W 1000 5 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 81 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 6 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFETTM Schottky body diode Characteristics Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558SDC. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 40 35 CURRENT (A) 30 25 di/dt = 300 A/μs 20 15 10 5 0 -5 700 800 900 1000 1100 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFETTM body diode reverse leakage versus drain-source voltage Figure 14. FDMS8558SDC SyncFETTM body diode reverse recovery characteristic ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 10 7 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS8558SDC N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout 5.10 4.90 PKG CL 8 (3.30) 5.10 3.91 A (2.60) (0.90) 0.77 B 5 PKG CL 8 4.52 6.25 5.90 7 6 1.27 5 KEEPOUT AREA 3.75 6.61 1.27 1 (0.82) 4 1 PIN #1 IDENT MAY APPEAR AS OPTIONAL TOP VIEW SEE DETAIL A 2 3 4 1.27 0.61 3.81 LAND PATTERN RECOMMENDATION FRONT VIEW O PTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE 3.81 1.27 (0.34) 0.50 (8X) 0.40 0.71 0.44 CHAMFER CO RNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 1 2 3 4 0.10 C A B 5.85 5.65 (3.44) 4.01? .30 8 7 6 5 SIDE VIEW 0.65 0.45 3.86 3.61 NOTES: UNLES S OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA, DATED OCTOB ER 2002. B) ALL DIMENS IONS ARE IN MILLIMETERS. C) DIME NSIONS DO NOT INCLUDE B URRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIME NSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACE S OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FIL E NAME: P QFN08DREV3 BOTTOM VIEW 0.1 MAX 0.10 C 0.08 C 1.05 0.95 0.30 0.20 DETAIL A 0.05 0.00 C SEATING PLANE SCALE: 2:1 ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 8 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 9 www.fairchildsemi.com FDMS8558SDC N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® F-PFS™ 2Cool™ PowerTrench® ® FRFET® PowerXS™ AccuPower™ Programmable Active Droop™ AX-CAP™* Global Power ResourceSM QFET® BitSiC® Green Bridge™ TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ and Better™ SmartMax™ Dual Cool™ TranSiC® MegaBuck™ SMART START™ EcoSPARK® TriFault Detect™ MICROCOUPLER™ Solutions for Your Success™ EfficentMax™ TRUECURRENT®* MicroFET™ SPM® ESBC™ μSerDes™ MicroPak™ STEALTH™ ® MicroPak2™ SuperFET® MillerDrive™ SuperSOT™-3 Fairchild® UHC® MotionMax™ SuperSOT™-6 Fairchild Semiconductor® Ultra FRFET™ Motion-SPM™ SuperSOT™-8 FACT Quiet Series™ UniFET™ mWSaver™ SupreMOS® FACT® VCX™ OptoHiT™ SyncFET™ FAST® VisualMax™ OPTOLOGIC® Sync-Lock™ FastvCore™ VoltagePlus™ ®* OPTOPLANAR® FETBench™ XS™ FlashWriter® * ® FPS™