MCH6542 Ordering number : EN8950 SANYO Semiconductors DATA SHEET MCH6542 PNP / NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO Collector Current (--)5 IC Collector Current (Pulse) Collector Dissipation ICP PC Mounted on a ceramic board (600mm2✕0.8m) 1unit Total Power Dissipation PT Mounted on a ceramic board (600mm2✕0.8m) Junction Temperature Tj Storage Temperature Tstg V (--)300 mA (--)900 mA 0.5 W 0.55 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Conditions typ max Unit VCB=(--)30V, IE=0A (--)100 nA VEB=(--)4V, IC=0A (--)100 nA VCE=(--)2V, IC=(--)10mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=(--)10V, f=1MHz Marking : EQ Ratings min VCE=(--)10V, IC=(--)50mA (200)300 (500)800 (520)380 (3)2.4 MHz pF Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN http://semicon.sanyo.com/en/network 22807EA TI IM TC-00000538 No.8950-1/5 MCH6542 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)100mA, IB=(--)5mA (--110)100 (--220)200 Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)100mA, IB=(--)5mA (--)0.9 (--)1.2 mV V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)30 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)5 Turn-On Time Storage Time Fall Time V ton tstg See specified Test Circuit. (39)42 See specified Test Circuit. (200)135 ns tf See specified Test Circuit. (48)90 ns Package Dimensions ns Electrical Connection 2.0 6 5 0.25 5 4 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) 1 2 3 Top view 4 0 to 0.02 1 2 3 0.65 0.3 0.85 0.07 6 0.15 2.1 1.6 0.25 unit : mm (typ) 7022A-012 1 2 3 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) 6 5 4 SANYO : MCPH6 Switching Time Test Circuit [PNP] IB1 PW=20µs D.C.≤1% INPUT [NPN] OUTPUT IB2 VR 50Ω INPUT RB RL + 220µF 470µF IC=20IB1= --20IB2= --100mA OUTPUT IB2 VR RB RL 50Ω + VBE=5V IB1 PW=20µs D.C.≤1% VCC= --12V + 220µF VBE= --5V + 470µF VCC=12V IC=20IB1= --20IB2=300mA No.8950-2/5 MCH6542 A 1.4m A --1.0mA 180 --0.8mA 160 --1.2m -- .8 --1 --140 --0.6mA --120 --100 --0.4mA --80 --0.2mA --60 --40 IB=0mA 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --400 A 0.8m 1.2 0.6mA mA 1.4 mA 0.4mA 1.6 120 100 0.2mA 80 60 40 IB=0mA 0 --2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V IT04096 [PNP] IC -- VBE 400 VCE= --2V 2.0 IT05501 [NPN] VCE=2V --350 --250 --150 --25° C 5°C 25°C --200 --100 --50 300 250 200 150 °C 25°C --25° C --300 Ta=7 5 Collector Current, IC -- mA 350 Ta= 7 Collector Current, IC -- mA 140 mA .0mA 1 [NPN] 20 --20 100 50 0 0 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 --1.0 Ta=75°C 25°C --25°C 3 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT11482 hFE -- IC 1000 [NPN] VCE=2V 7 Ta=75°C DC Current Gain, hFE 5 0 IT04097 [PNP] VCE= --2V 7 DC Current Gain, hFE IC -- VCE 200 Collector Current, IC -- mA --160 mA .6 --1 --2.0 mA Collector Current, IC -- mA A m --180 [PNP] 2.0mA 1.8mA IC -- VCE --200 2 100 7 5 5 25°C --25°C 3 2 3 2 100 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 7 VCE(sat) -- IC [PNP] 3 2 --100 7 5°C Ta=7 C 25°C --25° 2 --10 --1.0 2 3 5 7 10 2 3 5 7 100 2 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT04099 3 VCE(sat) -- IC 5 7 1000 IT11483 [NPN] IC / IB=20 7 5 3 3 1000 IC / IB=20 5 2 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 1.0 5 7--1000 IT04098 5 3 2 25 100 7 = Ta 5 75 °C °C 5 --2 °C 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT11484 No.8950-3/5 MCH6542 VBE(sat) -- IC IC / IB=20 2 --1000 7 25°C 5 3 --1.0 3 5 7 --10 2 3 5 7 --100 2 fT -- IC 3 5 3 2 100 7 2 3 5 7 --10 2 3 5 7 --100 2 3 2 25°C Ta= --25°C 7 75°C 5 3 2 3 2 2 3 5 7 --10 2 3 IN 7 2 3 5 7 10 2 3 3 2 1.0 7 5 3 5 7 100 2 3 5 7 1000 IT11487 Cob -- VCB [NPN] f=1MHz 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 100 7 5 ON Resistance, Ron -- Ω 10 7 5 [NPN] 100 3 5 IT05507 Ron -- IB [NPN] 1kΩ f=1MHz OUT IN 1kΩ 3 IB 5 7 1000 IT11486 2 10 OUT 2 3 Collector Current, IC -- A 1kΩ 3 2 3 [PNP] 1kΩ 5 7 100 5 IT04102 Ron -- IB f=1MHz 3 fT -- IC 5 1.0 5 7 --100 Collector-to-Base Voltage, VCB -- V 2 VCE=10V Output Capacitance, Cob -- pF 5 5 7 --1.0 5 7 10 [PNP] 7 3 3 7 f=1MHz 2 2 Collector Current, IC -- mA 5 7--1000 IT04101 Cob -- VCB 10 Output Capacitance, Cob -- pF 3 1.0 [PNP] VCE= --10V Collector Current, IC -- mA ON Resistance, Ron -- Ω 5 5 7--1000 IT04100 7 1.0 --0.1 IC / IB=20 7 Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, f T -- MHz 1000 5 --1.0 [NPN] 100 2 Collector Current, IC -- mA 100 7 5 10000 1000 Ta= --25°C 75°C VBE(sat) -- IC [PNP] Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 3 2 IB 10 7 5 3 2 1.0 7 5 3 2 2 0.1 --0.1 0.1 0.1 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06066 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06065 No.8950-4/5 MCH6542 PC -- Ta 0.6 0.55 Collector Dissipation, PC -- W [PNP/NPN] Mounted on a ceramic board (600mm2✕0.8mm) 0.5 0.4 To t al 0.3 di ss 1u ni t ip at io n 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10744 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No.8950-5/5