2SC4460M-SV Ordering number : EN7692A SANYO Semiconductors DATA SHEET 2SC4460M-SV NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • • High breakdown voltage, High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V IC 15 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, duty cycle≤10% Tc=25°C 25 A 4 A 3 W 55 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ Unit max VCB=500V, IE=0A 10 µA VEB=5V, IC=0A 10 µA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907 TI IM TC-00000845 / 61504KB TS IM TA-100751 No.7692-1/4 2SC4460M-SV Continued from preceding page. Parameter Symbol DC Current Gain Gain-Bandwidth Product Output Capacitance Ratings Conditions min typ hFE1 hFE2 VCE=5V, IC=1.2A 20 fT Cob VCE=10V, IC=1.2A 18 VCB=10V, f=1MHz 160 VCE=5V, IC=6A Unit max 40 8 MHz pF Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=1.2A 1 V Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=1.2A 1.5 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO VCEX(sus) ton IE=1mA, IC=0A Collector-to-Emitter Sustain Voltage Turn-On Time Storage Time V 500 V IC=5A, IB1=--IB2=2A, L=500µH, clamped tstg tf Fall Time 1000 7 V 500 V VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω 0.5 µs VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω 3.0 µs VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6Ω 0.3 µs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7505-002 5.6 3.4 INPUT 22.0 4.0 2.0 21.0 RB VR 20.4 3 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PML IC -- VCE 12 VCE=5V 1.4A 1.2A 1.0A 800mA 600mA 500mA 8 6 14 Collector Current, IC -- A 10 300mA 200mA 400mA 4 100mA 2 IC -- VBE 16 50mA 20mA IB=0mA 12 10 12 0° C 25° C --40 °C 5.45 VCC=200V 8 Ta = 2 VBE= --5V 0.6 3.5 1 + 470µF + 100µF 2.0 1.0 RL 28.6Ω 50Ω 2.8 2.0 Collector Current, IC -- A OUTPUT IB2 3.1 5.0 8.0 16.0 IB1 PW=20µs D.C.≤1% 6 4 2 0 0 0 2 4 6 8 Collector-to-Emitter Voltage, VCE -- V 10 ITR07047 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 ITR07048 No.7692-2/4 2SC4460M-SV hFE -- IC Ta=120°C 3 25°C 2 --40°C 10 7 5 2 1.0 5 3 2 = Ta 0.1 0°C 12 °C --40 3 2 5 2 0.1 5 2 1.0 5 2 2 10 ITR07049 Collector Current, IC -- A Switching Time, SW Time -- µs 5 3 2 1.0 Ta= --40°C 25°C 120°C 2 0.1 5 2 1.0 5 2 10 ITR07051 Collector Current, IC -- A 5 ICP=25A <50µs Collector Current, IC -- A s 0µ 10 IC=15A s 1m ms 2 10 P DC C =55 W op era tio n 5 1.0 5 2 0.1 5 2 3 5 7 10 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V 7 1000 ITR07053 7 5 3 t on 2 tf 2 3 5 7 2 1.0 3 5 Reverse Bias A S O IB2= --2A L=100µH Tc=25°C 3 2 10 7 5 IC Test Circuit 3 2 IB1 IB2 1.0 7 5 L VR --5V 10 2 VCC=20V 3 5 7 100 2 3 5 7 1000 2 IT06497 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 4 1.0 0.1 2 2 10 ITR07052 2 3 2 Tc=25°C Single pulse 2 7 3 100 7 5 2 10 2 10 ITR07050 tstg 5 Collector Current, IC -- A Forward Bias A S O 100 5 SW Time -- IC 7 5 0.1 2 5 2 1.0 0.1 3 2 5 7 7 5 2 0.1 10 IC / IB=5 7 5 Collector Current, IC -- A VBE(sat) -- IC 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 3 Collector Current, IC -- A 5 TUT DC Current Gain, hFE 7 5 IC / IB=5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 VCE(sat) -- IC 10 VCE=5V 25°C 2 PC -- Tc 60 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 55 3 No 2 he at sin k 1 0 50 40 30 20 10 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12925 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 150 160 ITR07056 No.7692-3/4 Transient Thermal Resistance, Rth(t) -- °C / W 2SC4460M-SV Rth(t) -- t 10 Tc=25°C 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 2 3 5 1.0 2 3 5 10 2 3 Time, t -- ms 5 100 2 3 5 1000 ITR07055 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No.7692-4/4