2SK2533 Ordering number : EN8611 SANYO Semiconductors DATA SHEET 2SK2533 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Symbol Conditions Ratings VDSS VGSS Unit 250 V ±30 V 12 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 48 A Tc=25°C 45 W Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Symbol V(BR)DSS V(BR)GSS IDSS Conditions Ratings min typ max Unit ID=1mA, VGS=0V 250 V IG= ±100μA, VDS=0V ±30 V VDS=250V, VGS=0V 1.0 VGS= ±25V, VDS=0V ±10 mA μA Cutoff Voltage IGSS VGS(off) VDS=10V, ID=1mA 2.0 3.0 V Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=6A 6.0 Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current 10 S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22410QA TK IM TA-0442 No.8611-1/2 2SK2533 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance RDS(on) Ciss Output Capacitance Coss Ratings Conditions Symbol min typ ID=6A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz max 200 270 Unit mΩ 1290 pF 300 pF Reverse Transfer Capacitance Crss pF td(on) VDS=20V, f=1MHz See specified Test Circuit. 125 Turn-ON Delay Time 22 ns Rise Time tr See specified Test Circuit. 66 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 320 ns Fall Time tf See specified Test Circuit. 105 ns Diode Forward Voltage VSD Diode Reverse Recovery Time trr IS=13A, VGS=0V IS=13A, di / dt=100A / μs 160 Package Dimensions 1.0 1.5 V ns Switching Time Test Circuit unit : mm 7002-001 VDD=100V VIN --10V 0V D 2 2.5 0.7 G 0.3 0.6 1.0 2.54 6.2 5.2 5.08 10.0 6.0 VOUT PW=10μs D.C.≤1% 1.2 4.2 1.0 2.54 1 ID=6A RL=16.7Ω VIN 0.6 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 7.8 2SK2533 1 : Gate 2 : Source 3 : Drain P.G 50Ω S SANYO : ZP Note on usage : Since the 2SK2533 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No.8611-2/2