6HN04SS Ordering number : ENA0528 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04SS General-Purpose Switching Device Applications Features • • 4V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 60 ±20 V V ID 200 mA mA Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 800 Allowable Power Dissipation PD When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0V Ratings min typ Unit max 60 V VDS=60V, VGS=0V 1 μA ±10 μA IGSS VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=100μA 1.2 ⏐yfs⏐ RDS(on)1 VDS=10V, ID=100mA 140 ID=100mA, VGS=10V 1.8 2.4 RDS(on)2 Ciss ID=50mA, VGS=4V 2.6 3.7 VDS=20V, f=1MHz 27 pF Output Capacitance Coss VDS=20V, f=1MHz 8.6 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 4.4 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Marking : YU 2.6 240 V mS Ω Ω Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608PE TI IM TC-00001258 No. A0528-1/4 6HN04SS Continued from preceding page. Parameter Symbol Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min typ See specified Test Circuit. 13.5 ns See specified Test Circuit. 11.5 ns See specified Test Circuit. 81 ns See specified Test Circuit. 39 ns VDS=30V, VGS=10V, ID=200mA VDS=30V, VGS=10V, ID=200mA 1.88 nC 0.4 nC VDS=30V, VGS=10V, ID=200mA IS=200mA, VGS=0V 0.37 nC Package Dimensions 0.85 V VDD=30V VIN 10V 0V Top View ID=200mA RL=150Ω VOUT VIN 1.4 0.3 1.2 Switching Time Test Circuit unit : mm (typ) 7029-003 D 0.25 PW=10μs D.C.≤1% 3 G 0.8 1.4 Unit max Rg 2 1 0.1 0.3 0.2 6HN04SS P.G 50Ω S 0.6 0.45 0.07 Rg=1.2kΩ 1 : Gate 2 : Source 3 : Drain 0.07 SANYO : SSFP Bottom View ID -- VDS 8V 120 VGS=3V 100 80 60 40 200 150 25° C Drain Current, ID -- mA 140 6V 100 50 Ta = Drain Current, ID -- mA 160 VDS=10V 250 15V 10V 180 ID -- VGS 300 5V 4V 200 20 0 --25 °C 3 75 °C 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT11263 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT11264 No. A0528-2/4 6HN04SS RDS(on) -- VGS 5.5 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.5 4.0 3.5 100mA 3.0 2.5 ID=50mA 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V mA =50 I D , =4V 0mA VGS =10 I D , V =10 V GS 3.5 3.0 2.5 2.0 1.5 1.0 0 --60 20 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11266 IS -- VSD 1000 7 5 VDS=10V 5 --40 IT11265 ⏐yfs⏐ -- ID 7 VGS=0V 3 7 25 °C 75 °C 5 3 3 2 --25 °C --2 0.1 100 7 5 25° C 5° C 2 2 5°C Source Current, IS -- mA 3 Ta = Forward Transfer Admittance, ⏐yfs⏐ -- S 4.0 0.5 0 10 7 5 2 3 0.01 1.0 1.0 0.4 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT11267 Drain Current, ID -- mA 7 tf 5 3 2 td(on) 0.7 0.8 0.9 1.0 1.1 IT11268 f=1MHz 5 Ciss, Coss, Crss -- pF td(off) 100 0.6 Ciss, Coss, Crss -- VDS 7 VDD=30V VGS=10V 2 0.5 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Switching Time, SW Time -- ns 4.5 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5.0 Ciss 3 2 Coss 10 7 Crss 5 tr 10 3 7 2 5 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 7 0 1.0 IT11269 Allowable Power Dissipation, PD -- W 8 7 6 5 4 3 2 1 10 15 20 IT11270 PD -- Ta 0.16 VDS=30V ID=200mA 9 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 5.5 Ta=25°C When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) 0.15 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 1.8 2.0 IT11271 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13429 No. A0528-3/4 6HN04SS Note on usage : Since the 6HN04SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No. A0528-4/4