SFT1327 Ordering number : ENA1571 SANYO Semiconductors DATA SHEET SFT1327 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Drain Current (PW≤10μs) ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature PW≤10μs, duty cycle≤1% Tc=25°C Unit --80 V ±20 V --4.5 A --18 A 1.0 W 15 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--2.3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--2.3A, VGS=--10V ID=--2.3A, VGS=--4.5V ID=--2.3A, VGS=--4V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Ratings min typ max --80 V VDS=--80V, VGS=0V VGS=±16V, VDS=0V Marking : T1327 --1.2 3.4 Unit --1 μA ±10 μA --2.6 5.7 V S 137 178 mΩ 162 227 mΩ 171 239 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O1409PA TK IM TC-00002083 No. A1571-1/4 SFT1327 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr td(off) See specified Test Circuit. 89 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge pF 75 pF 55 pF See specified Test Circuit. 112 tf Qg See specified Test Circuit. 45 ns VDS=--40V, VGS=--10V, ID=--4.5A 19.7 nC 2.9 nC 2.9 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--40V, VGS=--10V, ID=--4.5A VDS=--40V, VGS=--10V, ID=--4.5A Diode Forward Voltage VSD IS=--4.5A, VGS=0V --0.86 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 --1.2 V 2.3 2.3 5.5 0.5 0.6 2 3 2.3 2.3 7.5 2.5 0.8 0.8 1.6 0.85 1.2 1 0.5 2 3 0 t o 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 1.2 1.5 7.0 5.5 4 0.85 0.7 0.5 1.5 6.5 5.0 0.5 4 7.0 6.5 5.0 1 1110 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit 0V --10V VDD= --40V VIN ID= --2.3A RL=17.4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G SFT1327 50Ω S No. A1571-2/4 SFT1327 ID -- VDS --7 --2 VGS= --2.5V --1 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 200 150 100 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V --2.0 --2.5 --3.0 --3.5 --4.0 IT15083 A 2.3 = -, ID V .5 300 4 = -S G V A 2.3 = -I D , .0V 250 200 4 = -V GS 150 10 = -V GS 100 A 2.3 = -, ID V 0 . 50 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15085 IS -- VSD 7 5 VGS=0V 3 10 7 5 2 5°C --2 = Ta °C 75 2 1.0 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 --25°C 2 3 25°C 5°C Ta=7 5°C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --1.5 350 0 --60 --16 VDS= --10V 2 --1.0 RDS(on) -- Ta IT15084 | yfs | -- ID 3 --0.5 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --2.3A --2 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 250 50 0 0 --1.0 IT15082 RDS(on) -- VGS 300 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 5 --0.01 --0.2 5 7 --10 IT15086 Drain Current, ID -- A --0.6 --0.8 --1.0 Ciss, Coss, Crss -- VDS 3 --1.2 IT15087 f=1MHz 2 Ciss 2 1000 Ciss, Coss, Crss -- pF td(off) 100 7 tr 5 tf 3 2 td(on) 7 5 3 2 100 Coss 7 5 10 Crss 3 7 5 --0.1 --0.4 Diode Forward Voltage, VSD -- V VDD= --40V VGS= --10V 3 Switching Time, SW Time -- ns --3 C --1.0 --4 25° --1.5 --5 °C --2.0 --6 5°C --4 --25 --3. Drain Current, ID -- A --2.5 5°C 25°C 75°C 0V Ta= -2 --8 Ta= 7 --6 . V .5 --3 .5V .0V --3.0 VDS= --10V --1 6 Drain Current, ID -- A --3.5 0V . --4 --1 0.0 V --4.0 ID -- VGS --9 0V --4.5 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT15088 2 0 --10 --20 --30 --40 --50 --60 Drain-to-Source Voltage, VDS -- V --70 --80 IT15089 No. A1571-3/4 SFT1327 VGS -- Qg --10 2 s Drain Current, ID -- A 1m --2 --1.0 Operation in this area is limited by RDS(on). 7 5 on ati --3 2 er --4 3 op --5 ID= --4.5A 5 s m 10 ms 0 --6 7 10 --7 3 2 --1 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC PD -- Ta 18 20 he at sin k 0.4 0.2 0 20 40 60 80 100 3 5 7 --1.0 120 Ambient Temperature, Ta -- °C 140 160 IT12349 2 3 5 7 --10 2 3 5 7--100 2 IT15091 Drain-to-Source Voltage, VDS -- V PD -- Tc 20 0.8 0.6 2 IT15090 1.0 No Tc=25°C Single pulse --0.1 --0.1 Allowable Power Dissipation, PD -- W 1.2 Allowable Power Dissipation, PD -- W PW≤10μs 1 0μ s 10 0μ s --10 --8 0 IDP= --18A DC Gate-to-Source Voltage, VGS -- V --9 ASO 3 VDS= --40V ID= --4.5A 15 10 5 0 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT12350 Note on usage : Since the SFT1327 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1571-4/4