CPH6622 Ordering number : ENA0398A SANYO Semiconductors DATA SHEET CPH6622 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. With a built-in gate resistor. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V ID 3.0 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation IDP PD Channel Temperature PT Tch Storage Temperature Tstg V PW≤12ms, duty cycle≤1% 18 A Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 W Mounted on a ceramic board (900mm2✕0.8mm) 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : BW Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA Ratings min typ Unit max 20 V 0.6 1 µA ±10 µA 1.2 V Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80807 TI IM / 71807PE TI IM TC-00000813 No. A0398-1/4 CPH6622 Continued from preceding page. Parameter Symbol Forward Transfer Admittance Static Drain-to-Source On-State Resistance yfs RDS(on)1 RDS(on)2 Ratings Conditions min typ max Unit VDS=10V, ID=1.5A 1.5 3.3 ID=3A, VGS=4V ID=3A, VGS=2.5V 46 58 70 mΩ 75 100 mΩ 50 S Turn-ON Delay Time td(on) See specified Test Circuit. 210 Rise Time tr td(off) See specified Test Circuit. 690 ns See specified Test Circuit. 1400 ns tf Qg See specified Test Circuit. 1000 ns VDS=10V, VGS=4V, ID=3A 10.5 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A 1.0 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.8 Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions ns 2.8 nC 1.2 V Electrical Connection 0.15 2.9 6 5 6 5 4 1 2 3 4 0.2 0.6 unit : mm (typ) 7018A-013 1 2 0.95 3 Top view 1 : Source1 2 : Drain 3 : Source2 4 : Gate2 5 : Drain 6 : Gate1 0.4 0.9 0.2 0.6 2.8 1.6 0.05 1 : Source1 2 : Drain 3 : Source2 4 : Gate2 5 : Drain 6 : Gate1 SANYO : CPH6 Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1.5A RL=6.67Ω VIN D VOUT PW=10µs D.C.≤1% G P.G Rg CPH6622 50Ω S Rg=1kΩ No. A0398-2/4 CPH6622 ID -- VDS 3V 2.5 V VDS=10V 2V 0.1 0.2 0.3 0.4 Drain-to-Source Voltage, VDS -- V 0 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 50 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 1.5 2.0 2.5 A =3 ID , .5V =2 S =3A G V V, I D 0 . =4 V GS 100 50 --50 0 50 100 150 Ambient Temperature, Ta -- °C IT12754 200 IT12755 IS -- VSD 5 VDS=10V 3.0 IT12753 RDS(on) -- Ta 0 --100 10 yfs -- ID 7 1.0 Gate-to-Source Voltage, VGS -- V 150 Ta=25°C ID=3A 0 0.5 IT12752 RDS(on) -- VGS 150 VGS=0V 3 2 Source Current, IS -- A 5 5°C --2 = Ta 3 °C 25 2 75 °C 1.0 7 5 Ta=7 5°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25°C 0 0 Forward Transfer Admittance, yfs -- S 1 --25°C 1 2 Ta=75° C Drain Current, ID -- A .8V V GS=1 2 0 3 2 0.1 7 5 3 2 0.01 1.0 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A 3 0 Gate-to-Source Voltage, VGS -- V tf 1000 tr 5 3 t d(on) 2 0.6 0.8 1.0 1.2 IT12757 VGS -- Qg 10 td (off) 7 0.4 Diode Forward Voltage, VSD -- V VDS=10V ID=3A 9 2 0.2 IT12756 SW Time -- ID 3 Switching Time, SW Time -- ns ID -- VGS 3 8V Drain Current, ID -- A 6V 4V 3 8 7 6 5 4 3 2 1 100 0.1 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT10968 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT12758 No. A0398-3/4 CPH6622 ASO Drain Current, ID -- A 3 2 10 7 5 3 2 IDP=18A ID=3A DC 3 2 PW≤10µs 10 0µ s 1m s 10 ms 0m s tio n( Ta = 3 2 0.1 7 5 10 op era 1.0 7 5 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 5 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V Mounted on a ceramic board(900mm2✕0.8mm)1unit 1.0 0.9 0.8 To t al Di ss 0.6 1u nit ip ati on 0.4 0.2 0 2 3 IT12703 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12704 Note on usage : Since the CPH6622 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0398-4/4