FSS245 Ordering number : ENA0671 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS245 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 Gate-to-Source Voltage VGSS ±20 V 11 A Duty cycle≤1% 14 A Duty cycle≤1% 44 A Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s 2.9 W Drain Current (DC) ID Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation ID IDP PD V Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : S245 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=11A RDS(on)1 RDS(on)2 ID=11A, VGS=10V ID=5.5A, VGS=4V Ratings min typ Unit max 45 V 1.2 8.4 1 µA ±10 µA 2.6 14 V S 10 13 mΩ 16 23 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13107PA TI IM TC-00000396 No. A0671-1/4 FSS245 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=20V, f=1MHz VDS=20V, f=1MHz Unit max 3020 pF 350 pF VDS=20V, f=1MHz See specified Test Circuit. 265 pF 30 ns ns Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit. 150 See specified Test Circuit. 170 ns tf See specified Test Circuit. 115 ns nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg Qgs VDS=24V, VGS=10V, ID=11A VDS=24V, VGS=10V, ID=11A 54 Gate-to-Source Charge 9 nC Gate-to-Drain “Miller” Charge Qgd VDS=24V, VGS=10V, ID=11A 10 nC Diode Forward Voltage VSD IS=11A, VGS=0V 0.82 Package Dimensions 1.2 V Switching Time Test Circuit unit : mm (typ) 7005-002 VDD=24V 5 10V 0V VIN ID=11A RL=2.18Ω VIN 6.0 4.4 0.3 8 VOUT D PW=10µs D.C.≤1% G 1 4 0.2 1.27 0.595 P.G 50Ω S FSS245 0.1 5.0 1.5 1.8 MAX 0.43 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 ID -- VDS 10 3.5V 6.0V 11 ID -- VGS 16 VDS=10V 3.0V 5 4 3 VGS=2.5V 4 Ta= 7 2 8 1 --25 °C 6 12 5°C 25°C 4.0V Drain Current, ID -- A 7 4.5V 8 10.0V Drain Current, ID -- A 9 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 IT12043 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT12044 No. A0671-2/4 FSS245 RDS(on) -- VGS 80 RDS(on) -- Ta 30 60 50 40 11A 30 20 ID=5.5A 10 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 °C 25 3 2 7 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 3 20 40 td(off) tf 5 tr 3 2 0.1 7 5 3 2 0.4 0.6 0.8 160 IT12046 1.0 1.2 IT12048 Ciss, Coss, Crss -- VDS f=1MHz Ciss 2 1000 7 5 Coss 3 Crss 2 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 0 3 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 20 30 40 Total Gate Charge, Qg -- nC 10 50 60 IT12051 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V VDS=10V ID=11A 10 5 IT12049 VGS -- Qg 10 0 140 1.0 7 5 3 2 3 7 9 120 5 2 10 0.1 100 VGS=0V 3 td(on) 80 10 7 5 3 2 7 VDD=24V 100 60 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 0 IS -- VSD IT12047 SW Time -- ID 5 --20 0.01 7 5 3 2 0.001 0.2 1.0 2 --40 3 2 10 C 5° --2 = °C Tc 75 5 Ambient Temperature, Ta -- °C 2 7 10 IT12045 VDS=10V 5 0.1 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID 3 15 25°C 4 5.5A I = 4V, D = VGS 1.0A I D=1 , V 0 =1 VGS Tc= 75° C 3 20 0 --60 0 2 25 --25° C 70 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 10 7 5 3 2 ASO ≤10µs IDP=44A 1m ID=11A 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 45 IT12050 10 10 0m s ms s s op Operation in era tio this area is n limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 100 IT12052 No. A0671-3/4 FSS245 PD -- Ta Allowable Power Dissipation, PD -- W 3.5 M 3.0 2.9 ou nt 2.5 ed on ac er am ic 2.0 bo ar d( 12 1.5 00 m 1.0 m2 ✕0 .8m m ), 0.5 PW ≤1 0s 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12053 Note on usage : Since the FSS245 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0671-4/4