SANYO FSS245

FSS245
Ordering number : ENA0671
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
FSS245
General-Purpose Switching Device
Applications
Features
•
•
•
Motor drive applications.
Inverter drive applications.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
45
Gate-to-Source Voltage
VGSS
±20
V
11
A
Duty cycle≤1%
14
A
Duty cycle≤1%
44
A
Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s
2.9
W
Drain Current (DC)
ID
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
ID
IDP
PD
V
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : S245
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS(off)
yfs
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=11A
RDS(on)1
RDS(on)2
ID=11A, VGS=10V
ID=5.5A, VGS=4V
Ratings
min
typ
Unit
max
45
V
1.2
8.4
1
µA
±10
µA
2.6
14
V
S
10
13
mΩ
16
23
mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13107PA TI IM TC-00000396 No. A0671-1/4
FSS245
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Ratings
Conditions
min
typ
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Unit
max
3020
pF
350
pF
VDS=20V, f=1MHz
See specified Test Circuit.
265
pF
30
ns
ns
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
td(off)
See specified Test Circuit.
150
See specified Test Circuit.
170
ns
tf
See specified Test Circuit.
115
ns
nC
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Qgs
VDS=24V, VGS=10V, ID=11A
VDS=24V, VGS=10V, ID=11A
54
Gate-to-Source Charge
9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=24V, VGS=10V, ID=11A
10
nC
Diode Forward Voltage
VSD
IS=11A, VGS=0V
0.82
Package Dimensions
1.2
V
Switching Time Test Circuit
unit : mm (typ)
7005-002
VDD=24V
5
10V
0V
VIN
ID=11A
RL=2.18Ω
VIN
6.0
4.4
0.3
8
VOUT
D
PW=10µs
D.C.≤1%
G
1
4
0.2
1.27
0.595
P.G
50Ω
S
FSS245
0.1
5.0
1.5
1.8 MAX
0.43
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
ID -- VDS
10
3.5V
6.0V
11
ID -- VGS
16
VDS=10V
3.0V
5
4
3
VGS=2.5V
4
Ta=
7
2
8
1
--25
°C
6
12
5°C 25°C
4.0V
Drain Current, ID -- A
7
4.5V
8
10.0V
Drain Current, ID -- A
9
0
0
0
0.2
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
1.0
IT12043
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V
4.0
IT12044
No. A0671-2/4
FSS245
RDS(on) -- VGS
80
RDS(on) -- Ta
30
60
50
40
11A
30
20
ID=5.5A
10
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
5
°C
25
3
2
7
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
3
20
40
td(off)
tf
5
tr
3
2
0.1
7
5
3
2
0.4
0.6
0.8
160
IT12046
1.0
1.2
IT12048
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
2
1000
7
5
Coss
3
Crss
2
100
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
2
0
3
100
7
5
3
2
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
20
30
40
Total Gate Charge, Qg -- nC
10
50
60
IT12051
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=11A
10
5
IT12049
VGS -- Qg
10
0
140
1.0
7
5
3
2
3
7
9
120
5
2
10
0.1
100
VGS=0V
3
td(on)
80
10
7
5
3
2
7
VDD=24V
100
60
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
0
IS -- VSD
IT12047
SW Time -- ID
5
--20
0.01
7
5
3
2
0.001
0.2
1.0
2
--40
3
2
10
C
5°
--2
=
°C
Tc
75
5
Ambient Temperature, Ta -- °C
2
7
10
IT12045
VDS=10V
5
0.1
Gate-to-Source Voltage, VGS -- V
10
yfs -- ID
3
15
25°C
4
5.5A
I =
4V, D
=
VGS
1.0A
I D=1
,
V
0
=1
VGS
Tc=
75°
C
3
20
0
--60
0
2
25
--25°
C
70
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
10
7
5
3
2
ASO
≤10µs
IDP=44A
1m
ID=11A
10
DC
1.0
7
5
3
2
0.1
7
5
3
2
45
IT12050
10
10
0m
s
ms
s
s
op
Operation in
era
tio
this area is
n
limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm)
0.01
0.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5 7 100
IT12052
No. A0671-3/4
FSS245
PD -- Ta
Allowable Power Dissipation, PD -- W
3.5
M
3.0
2.9
ou
nt
2.5
ed
on
ac
er
am
ic
2.0
bo
ar
d(
12
1.5
00
m
1.0
m2
✕0
.8m
m
),
0.5
PW
≤1
0s
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12053
Note on usage : Since the FSS245 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0671-4/4